o Abstract: 3D design strategies are becoming increasingly important in the IC industry to self-fulfil the prophecy of Moore's law. The combination of 3D and shrinking dimensions complicate the use of photolithography, explaining the rise of self-aligned patterning in novel process integration schemes. We therefore study the combination of full-3D silicon (Si) machining with self-aligned patterning techniques, specifically concave and convex corner lithography [1,2], in an approach called crystallographic nanolithography [2]. In the AMBIFAlent project we collaboratively employ these techniques to develop new 3D transistor configurations, particularly for enhancing performance of power switches. [1] E. Berenschot et al., Proc. IEEE NEMS, vol. 3, pp. 729–732, 2008. [2] E. Berenschot et al., ACS Appl. Nano Mater., vol. 5, no. 10, pp. 15847–15854, 2022
Period
7 Nov 2025
Event title
EIPBN Women in Nanofabrication – Young Investigator's session 2025