A comparison of tungsten films grown by CVD and hot-wire assisted ALD

    Activity: Talk or presentationOral presentation


    Plasma-enhanced atomic layer deposition has been proposed as a suitable technique to grow metals [1]. In this work, we develop hot-wire assisted ALD (HWALD) where plasma is replaced by a tungsten filament heated up to 1700-2000 oC. Molecular H2 can efficiently dissociate on a heated filament, generating atomic hydrogen (at-H) [2]. In the current approach we utilize HWALD of tungsten (W) by alternating pulses of WF6 and at-H. A 100-nm SiO2 thermally grown on Si wafer was used as a substrate to enable electrical characterization of W films. Due to slow nucleation of W on SiO2, a 2-5 nm thin seed layer of W was pre-formed prior to ALD by (i) depositing a 5 nm amorphous Si (a-Si) layer using Si2H6 and (ii) introducing WF6 to convert the a-Si into a W layer. The growth behaviour was monitored in real time by an in-situ spectroscopic ellipsometer (SE).
    Period28 Jun 20151 Jul 2015
    Event title15th International Conference on Atomic Layer Deposition 2015
    Event typeConference
    Conference number15
    LocationPortland, United States, OregonShow on map
    Degree of RecognitionInternational