Addressing single mode in GaAs/AlAs micropillar resonators

  • Georgios Ctistis (Speaker)
  • Edwin van der Pol (Contributor)
  • Alex Hartsuiker (Contributor)
  • Maela Bazin (Speaker)
  • Julien Claudon (Contributor)
  • Jean-Michel Gérard (Contributor)
  • Vos, W. L. (Contributor)

Activity: Talk or presentationOral presentation


In this talk we present broadband white-light reflectivity experiments on micropillar resonators with diameters ranging between 1µ m and 20 µ m. The micropillars consist of a GaAs λ-layer, sandwiched between two Bragg-stacks made of λ/4 GaAs/AlAs layers, and were fabricated by molecular-beam epitaxy. We are able to spectrally resolve distinct transverse modes in the reflectivity experiments and to address single modes by scanning the probe beam along the top facet of the micropillar. The positioning of the focused laser beam turns out to be crucial for pillar diameters exceeding the beam diameter, since at every position the coupling efficiency to different modes changes. By decreasing the pillar diameter, we are able to resolve single modes, since the spacing between the modes increases.
Period12 Mar 2010
Event titleDPG Frühjahrstagung 2010 Hannover: (DPG Spring Meeting)
Event typeConference
OrganiserDeutsche Physikalische Gesellschaft
LocationHannover, Germany
Degree of RecognitionInternational


  • METIS-265095