Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer

Bouwmeester, R. L. (Speaker), de Hond, C. A. J. (Contributor), Nicolas Gauquelin (Contributor), Jo Verbeeck (Contributor), Koster, G. (Contributor), Brinkman, A. (Contributor)

Activity: Talk or presentationOral presentation

Description

Topological insulating materials are very promising for applications in spintronics and quantum computing. The presently confirmed topological insulators are not suitable for room temperature applications. Perovskite oxides are interesting in this respect, since topological insulating phases have theoretically been predicted with large band gaps. YBiO3 has been predicted to be a topological insulator for the perovskite phase with yttrium and bismuth located at the A-site and B-site, respectively. However, the fluorite phase turns out to be thermodynamically more stable than the perovskite phase. In this work we show that we were able to engineer the perovskite crystal phase of thin film YBiO3 by using a BaBiO3 buffer layer and interval deposition. When the YBiO3 is deposited on top of the BaBiO3, a single oriented perovskite phase is observed with the expected lattice constants. These findings pave a way towards the fabrication of quantum devices for testing the hypothesized topological insulating phase in YBiO3.
Period8 Mar 2019
Held atAPS March Meeting 2019
Event typeConference
LocationBoston, United States, Massachusetts