Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia

Sourish Banerjee (Speaker), Aarnink, A. A. I. (Contributor), Kip, G. A. M. (Contributor), Gravesteijn, D. J. (Contributor), Schmitz, J. (Contributor), Kovalgin, A. Y. (Contributor)

    Activity: Talk or presentationOral presentation

    Description

    Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.
    Period24 Jul 2016 - 27 Jul 2016
    Event title16th International Conference on Atomic Layer Deposition, ALD 2016
    Event typeConference
    Conference number16
    LocationDublin, Ireland
    Degree of RecognitionInternational