Effects of oxygen, nitrogen and fluorine sources on the formation of α- and β-phase Tungsten films by hot-wire assisted ALD

    Activity: Talk or presentationOral presentation


    Atomic layer deposition (ALD) of metals has attracted a considerable attention in view of ultra-large-scale integrated circuit manufacturing. Plasma-enhanced ALD (PEALD) has been proposed as a suitable technique to grow a number of metals. Deposition of metals often requires generation of reactive species such as e.g. atomic hydrogen (at-H). In our previous work we have demonstrated an alternative and a technically easier approach to create at-H by replacing plasma with a heated (up to 2000 oC) tungsten (W) wire. This so-called hot-wire assisted ALD (HWALD) has been successfully utilized to deposit W films using alternating pulses of WF6 gas and at-H [1-2].
    Period11 Jun 201714 Jun 2017
    Event titleEuroCVD 2017: Joint EuroCVD 21 – Baltic ALD 15 Conference
    Event typeConference
    LocationLinköping, SwedenShow on map
    Degree of RecognitionInternational