Effects of oxygen, nitrogen and fluorine sources on the formation of α- and β-phase Tungsten films by hot-wire assisted ALD

Mengdi Yang (Contributor), Aarnink, A. A. I. (Contributor), Schmitz, J. (Contributor), Kovalgin, A. Y. (Speaker)

    Activity: Talk or presentation › Oral presentation

    Description

    Atomic layer deposition (ALD) of metals has attracted a considerable attention in view of ultra-large-scale integrated circuit manufacturing. Plasma-enhanced ALD (PEALD) has been proposed as a suitable technique to grow a number of metals. Deposition of metals often requires generation of reactive species such as e.g. atomic hydrogen (at-H). In our previous work we have demonstrated an alternative and a technically easier approach to create at-H by replacing plasma with a heated (up to 2000 oC) tungsten (W) wire. This so-called hot-wire assisted ALD (HWALD) has been successfully utilized to deposit W films using alternating pulses of WF6 gas and at-H [1-2].
    Period11 Jun 2017 → 14 Jun 2017
    Event titleEuroCVD 2017: Joint EuroCVD 21 – Baltic ALD 15 Conference
    Event typeConference
    LocationLinköping, Sweden
    Degree of RecognitionInternational

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