Electrical characterisation of B+ and BF2+ implanted poly-Si and Poly-Ge1Si1-x as gate material for sub-0.25um

Salm, C. (Invited speaker), D.T. van Veen (Invited speaker), J. Holleman (Invited speaker), P.H. Woerlee (Invited speaker)

    Activity: Talk or presentationOral presentation

    Description

    Opmerking: Invited
    Period25 Sep 1995
    Event title25th European Solid State Device Research Conference, ESSDERC 1995
    Event typeConference
    Conference number25
    LocationThe Hague, Netherlands
    Degree of RecognitionInternational

    Keywords

    • METIS-116846