Electrical characterisation of B+ and BF2+ implanted poly-Si and Poly-Ge1Si1-x as gate material for sub-0.25um

  • Salm, C. (Invited speaker)
  • D.T. van Veen (Invited speaker)
  • J. Holleman (Invited speaker)
  • P.H. Woerlee (Invited speaker)

    Activity: Talk or presentationOral presentation

    Description

    Opmerking: Invited
    Period25 Sept 1995
    Event title25th European Solid State Device Research Conference, ESSDERC 1995
    Event typeConference
    Conference number25
    SponsorsPhilips Semiconductors - Applied Materials, Philips Semiconductors - ASM-Lithography, Philips Semiconductors - GSM Nederland, The European Union - ASM International, The European Union - Novellus Systems
    LocationThe Hague, NetherlandsShow on map
    Degree of RecognitionInternational

    Keywords

    • METIS-116846