Electronic and structural properties of epitaxial silicene on h-BN-terminated ZrB2

Frank Wiggers (Speaker), Antoine Fleurence (Contributor), Kohei Aoyagi (Contributor), Takahiro Yonezawa (Contributor), Yukiko Yamada-Takamura (Contributor), Haifeng Feng (Contributor), Jincheng Zhuang (Contributor), Yi Du (Contributor), Kovalgin, A. (Contributor), de Jong, M. (Contributor)

Activity: Talk or presentationOral presentation

Description

Silicene is a two-dimensional (2D) material consisting of an atomically buckled honeycomb lattice of Si atoms. Its attractive predicted properties include an electrically tunable bandgap and the quantum spin Hall effect. Free-standing silicene has not been synthesized to date, but epitaxial silicene layers have been reported on a number of metallic substrates, amongst which ZrB2(0001) thin films on Si(111). These substrates have a non-negligible effect on the electronic properties of the silicene due to hybridization effects. We have investigated epitaxial silicene on ZrB2(0001) surfaces terminated with an insulating, epitaxial h-BN monolayer. I will discuss the electronic and structural properties of such silicene layers, based on synchrotron-based (angle-resolved) photoelectron spectroscopy and scanning tunneling microscopy studies.
Period13 Mar 2017
Held atAPS March Meeting 2017
Event typeConference
LocationNew Orleans, United States, Louisiana
Degree of RecognitionInternational