Electronic and structural properties of epitaxial silicene on h-BN-terminated ZrB2

  • Frank Wiggers (Speaker)
  • Antoine Fleurence (Contributor)
  • Kohei Aoyagi (Contributor)
  • Takahiro Yonezawa (Contributor)
  • Yukiko Yamada-Takamura (Contributor)
  • Haifeng Feng (Contributor)
  • Jincheng Zhuang (Contributor)
  • Yi Du (Contributor)
  • Kovalgin, A. (Contributor)
  • de Jong, M. (Contributor)

    Activity: Talk or presentationOral presentation


    Silicene is a two-dimensional (2D) material consisting of an atomically buckled honeycomb lattice of Si atoms. Its attractive predicted properties include an electrically tunable bandgap and the quantum spin Hall effect. Free-standing silicene has not been synthesized to date, but epitaxial silicene layers have been reported on a number of metallic substrates, amongst which ZrB2(0001) thin films on Si(111). These substrates have a non-negligible effect on the electronic properties of the silicene due to hybridization effects. We have investigated epitaxial silicene on ZrB2(0001) surfaces terminated with an insulating, epitaxial h-BN monolayer. I will discuss the electronic and structural properties of such silicene layers, based on synchrotron-based (angle-resolved) photoelectron spectroscopy and scanning tunneling microscopy studies.
    Period13 Mar 2017
    Event titleAPS March Meeting 2017
    Event typeConference
    OrganiserAmerican Physical Society (APS)
    LocationNew Orleans, United States, LouisianaShow on map
    Degree of RecognitionInternational