First demonstration of a hybrid integrated InP-Si3N4 diode laser for broadband optical frequency comb generation

  • Bastiaens, H. M. J. (Speaker)
  • G. Neijts (Contributor)
  • Memon, A. (Contributor)
  • Youwen Fan (Contributor)
  • Mak, J. (Contributor)
  • Dimitri Geskus (Contributor)
  • Marcel Hoekman (Contributor)
  • V. Moskalenko (Contributor)
  • E.A.J.M. Bente (Contributor)
  • Boller, K. (Speaker)

Activity: Talk or presentation › Oral presentation

Description

We demonstrate the first on-chip laser frequency comb based on hybrid integration with low-loss Si3N4 waveguide circuits. The laser comprises an InP diode amplifier of which a small fraction is reverse biased for passive locking, while a Si3N4 feedback waveguide extends the optical cavity to a roundtrip length of 15 cm. The generated comb densely covers a 25 nm broad spectrum, at a 3 dB level, with more than 1600 comb-lines at 2 GHz spacing. With such properties, hybrid integrated diode lasers show great promise for widespread use in applications such as integrated microwave photonics or metrology.
Period9 Mar 2021
Event titleSPIE Photonics West 2021
Event typeConference
Degree of RecognitionInternational

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