Activity: Talk or presentation › Oral presentation
There is huge interest in atomic layer deposition (ALD) of metals for ultra-large-scale integrated circuit manufacturing. Radical-enhanced ALD (REALD) utilizing plasma (PEALD) has been proposed to grow a number of metals . In this work, we investigate an alternative approach to REALD without plasma, replacing it by a hot (up to 2000 oC) tungsten (W) wire. In this so-called hot-wire ALD (HWALD), W is deposited using alternating pulses of WF6 and atomic hydrogen (at-H). The latter is generated by catalytic dissociation of molecular hydrogen (H2) upon the hot wire .
13 Jul 2015 → 17 Jul 2015
20th Biennial European Conference on Chemical Vapor Deposition 2015