Hot-wire assisted ALD of tungsten films: In-Situ study of the interplay between ALD, CVD and etching modes

Mengdi Yang (Speaker), Aarnink, A. A. I. (Contributor), Kovalgin, A. Y. (Contributor), Wolters, R. A. M. (Contributor), Schmitz, J. (Contributor)

    Activity: Talk or presentationOral presentation


    There is huge interest in atomic layer deposition (ALD) of metals for ultra-large-scale integrated circuit manufacturing. Radical-enhanced ALD (REALD) utilizing plasma (PEALD) has been proposed to grow a number of metals [1]. In this work, we investigate an alternative approach to REALD without plasma, replacing it by a hot (up to 2000 oC) tungsten (W) wire. In this so-called hot-wire ALD (HWALD), W is deposited using alternating pulses of WF6 and atomic hydrogen (at-H). The latter is generated by catalytic dissociation of molecular hydrogen (H2) upon the hot wire [2].
    Period13 Jul 201517 Jul 2015
    Event title20th Biennial European Conference on Chemical Vapor Deposition 2015: null
    Event typeConference
    Conference number20
    LocationSempach, Switzerland
    Degree of RecognitionInternational