Hot-wire assisted ALD of tungsten films: In-Situ study of the interplay between ALD, CVD and etching modes

    Activity: Talk or presentationOral presentation


    There is huge interest in atomic layer deposition (ALD) of metals for ultra-large-scale integrated circuit manufacturing. Radical-enhanced ALD (REALD) utilizing plasma (PEALD) has been proposed to grow a number of metals [1]. In this work, we investigate an alternative approach to REALD without plasma, replacing it by a hot (up to 2000 oC) tungsten (W) wire. In this so-called hot-wire ALD (HWALD), W is deposited using alternating pulses of WF6 and atomic hydrogen (at-H). The latter is generated by catalytic dissociation of molecular hydrogen (H2) upon the hot wire [2].
    Period13 Jul 201517 Jul 2015
    Event title20th Biennial European Conference on Chemical Vapor Deposition 2015
    Event typeConference
    Conference number20
    LocationSempach, SwitzerlandShow on map
    Degree of RecognitionInternational