Hot wire technique as a radical source for atomic layer deposition of metal and metal nitride films

Sourish Banerjee (Speaker), Ramazan Oguzhan Apaydin (Contributor), Aarnink, A. A. I. (Contributor), Schmitz, J. (Contributor), Gravesteijn, D. J. (Contributor), de Jong, M. P. (Contributor), Kovalgin, A. Y. (Contributor)

Activity: Talk or presentationOral presentation

Description

Atomic layer deposition (ALD) of metal and metal-nitride films has triggered significant interest in semiconductor and optoelectronic industries, owing to its characteristic in depositing ultra-thin (a-few-nm) films [1, 2]. The thermal activation of precursors in conventional ALD processes has been complemented by plasma- and other means of (gaseous) radical production. For example, in order to sustain the film growth for a number of ALD processes, the dissociation of ammonia (NH3) into radicals is necessary [3, 4]. In parallel, generation of atomic hydrogen radicals can be essential for the deposition of metallic films [5, 6]. A hot-wire (heated W) filament can serve as a highly controllable, ion- and UV-free source of radicals [7]. In this premise, we have: (i) characterized the hot-wire (HW) technique for generation of atomic hydrogen (at-H) radicals from both molecular hydrogen (H2) and NH3 precursors, (ii) explored the feasibility of HW to generate N-containing radicals (N-rad) from the dissociation of NH3, and (iii) studied the effects of the so-generated N-rad in the deposition of aluminium nitride (AlN) and boron nitride (BN) films.
Period11 Jun 2017 - 17 Jun 2017
Held atEuroCVD 2017
Event typeConference
LocationLinköping, Sweden
Degree of RecognitionInternational