Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

  • T. Lohner (Speaker)
  • M. Fried (Speaker)
  • J. Gyulai (Speaker)
  • K. Vedam (Speaker)
  • N.V. Nguyen (Speaker)
  • L.J. Hanekamp (Speaker)
  • Arend van Silfhout (Speaker)

Activity: Talk or presentationOral presentation

Description

Plaats van uitgifte: Parijs, Frankrijk
Period11 Jan 1993
Event title1st International Conference on Spectroscopic Ellipsometry, ICSE 1993
Event typeConference
Conference number1
LocationParis, France

Keywords

  • METIS-133035