Optical properties of multilayers for operational wavelengths between 6.6 and 13.5 nm’

Description

EUV Lithography systems operating with 13.5 nm light have successfully been developed and built and techniques to improve the resolution have been identified.
For future applications, the operational wavelength of the litho systems can be further reduced to enhance the resolution, provided a sufficiently high reflectance and bandwidth, both in wavelength and angle, can be achieved.
These shorter wavelengths are not, or not yet, on the roadmap of the semiconductor industry. However, the multilayer community and source developers need to be ready for a possible further reduction of the wavelength.
In this talk we will discuss optical properties, challenges and some results of reflective optics between 6.6 and 13.5 nm.

Period	4 Nov 2019 → 6 Nov 2019
Event title	EUV Source Workshop 2019: null
Event type	Workshop
Location	Amsterdam, Netherlands
Degree of Recognition	International