PEALD ALN: CONTROLLING GROWTH AND FILM CRYSTALLINITY

Sourish Banerjee (Speaker), Aarnink, A. A. I. (Contributor), Kovalgin, A. Y. (Contributor), Schmitz, J. (Contributor)

    Activity: Talk or presentationOral presentation

    Description

    The applications of aluminum nitride (AlN) thin films demand precise control over film growth and properties. With the advantage of self-limiting growth provided by atomic layer deposition (ALD), a few-nm-thin AlN films is possible to realize. Plasma-enhanced ALD (PEALD) can be used to grow highly pure AlN films at low temperatures compared to thermal ALD [1]. Earlier, our group reported on self-limiting growth and nucleation of ALD AlN, by both thermal and plasma processes [2]. The current work is focused on optimizing the ALD process window for PEALD AlN, material characterization, and growth of polycrystalline films that have a hexagonal wurtzite structure. Further, a predominance of (002) wurtzitic crystalline planes is observed, which is important for our planned applications with AlN.
    Period13 Jul 2015 - 17 Jul 2015
    Event title20th Biennial European Conference on Chemical Vapor Deposition 2015
    Event typeConference
    Conference number20
    LocationSempach, Switzerland
    Degree of RecognitionInternational