Description
The applications of aluminum nitride (AlN) thin films demand precise control over film growth and properties. With the advantage of self-limiting growth provided by atomic layer deposition (ALD), a few-nm-thin AlN films is possible to realize. Plasma-enhanced ALD (PEALD) can be used to grow highly pure AlN films at low temperatures compared to thermal ALD [1]. Earlier, our group reported on self-limiting growth and nucleation of ALD AlN, by both thermal and plasma processes [2]. The current work is focused on optimizing the ALD process window for PEALD AlN, material characterization, and growth of polycrystalline films that have a hexagonal wurtzite structure. Further, a predominance of (002) wurtzitic crystalline planes is observed, which is important for our planned applications with AlN.| Period | 13 Jul 2015 → 17 Jul 2015 |
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| Event title | 20th Biennial European Conference on Chemical Vapor Deposition 2015 |
| Event type | Conference |
| Conference number | 20 |
| Location | Sempach, SwitzerlandShow on map |
| Degree of Recognition | International |