PEALD ALN: CONTROLLING GROWTH AND FILM CRYSTALLINITY

Sourish Banerjee (Speaker), Aarnink, A. A. I. (Contributor), Kovalgin, A. Y. (Contributor), Schmitz, J. (Contributor)

    Activity: Talk or presentationOral presentation

    Description

    The applications of aluminum nitride (AlN) thin films demand precise control over film growth and properties. With the advantage of self-limiting growth provided by atomic layer deposition (ALD), a few-nm-thin AlN films is possible to realize. Plasma-enhanced ALD (PEALD) can be used to grow highly pure AlN films at low temperatures compared to thermal ALD [1]. Earlier, our group reported on self-limiting growth and nucleation of ALD AlN, by both thermal and plasma processes [2]. The current work is focused on optimizing the ALD process window for PEALD AlN, material characterization, and growth of polycrystalline films that have a hexagonal wurtzite structure. Further, a predominance of (002) wurtzitic crystalline planes is observed, which is important for our planned applications with AlN.
    Period13 Jul 201517 Jul 2015
    Event title20th Biennial European Conference on Chemical Vapor Deposition 2015
    Event typeConference
    Conference number20
    LocationSempach, Switzerland
    Degree of RecognitionInternational