Activity: Talk or presentation › Oral presentation
The applications of aluminum nitride (AlN) thin films demand precise control over film growth and properties. With the advantage of self-limiting growth provided by atomic layer deposition (ALD), a few-nm-thin AlN films is possible to realize. Plasma-enhanced ALD (PEALD) can be used to grow highly pure AlN films at low temperatures compared to thermal ALD . Earlier, our group reported on self-limiting growth and nucleation of ALD AlN, by both thermal and plasma processes . The current work is focused on optimizing the ALD process window for PEALD AlN, material characterization, and growth of polycrystalline films that have a hexagonal wurtzite structure. Further, a predominance of (002) wurtzitic crystalline planes is observed, which is important for our planned applications with AlN.
13 Jul 2015 → 17 Jul 2015
20th Biennial European Conference on Chemical Vapor Deposition 2015: null