Pure-metal and metal-nitride films by hotwire-assisted atomic layer deposition

    Activity: Talk or presentationInvited talk


    Manufacturing of semiconductor devices, such as microprocessors, DRAM memories, flash memories, and image sensors, relies on deposition of thin dielectric, semiconducting and metallic layers (films) of various functionalities. Atomic Layer Deposition (ALD), either in a thermal mode or enhanced by plasma (PEALD), is becoming a major player in the field of deposition. Thermal ALD processes for deposition of titanium nitride (TiN) and aluminum oxide (Al2O3) are commonly used nowadays. With a few exceptions, single-element films of metals and semiconductors are however rather difficult to deposit using thermal-only ALD processes. A solution in this case is PEALD. Hydrogen- or nitrogen-based plasmas are used to deposit Ta(N), Ti(N), Ru, Si, Ge and Al as well as AlN and GaN. Several limitations however make PEALD less attractive. Plasma can cause damage to the wafer under treatment. Further, a plasma involves a lot (tens, hundreds) of chemical reactions. As a result, the wafer surface is exposed to many ions, radicals and atoms, as well as UV photons. This makes the composition and structure of the growing film hard to predict and control.
    Period22 Nov 2017
    Event title4th International Conference on Advanced Electromaterials, ICAE 2017
    Event typeConference
    Conference number4
    LocationJeju, Korea, Democratic People's Republic ofShow on map
    Degree of RecognitionInternational