Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon

  • Nanver, L. K. (Speaker)
  • Xingyu Liu (Contributor)
  • Tihomir Knezevic (Contributor)

    Activity: Talk or presentation › Oral presentation

    Description

    A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm-thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.
    Period20 Mar 2018
    Event title31st IEEE International Conference on Microelectronic Test Structures 2018
    Event typeConference
    Conference number31
    LocationAustin, United States, TexasShow on map
    Degree of RecognitionInternational

    Keywords

    • Sillicon
    • Substrates
    • doping
    • temperature measurement
    • electrical resistance measurement
    • pollution measurement
    • surface treatment

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