TiN films by Atomic Layer Deposition: Growth and Electrical Characterization down to sub-nm Thickness

Kovalgin, A. Y. (Invited speaker)

    Activity: Talk or presentationInvited talk

    Description

    This extended study reports on the growth and characterization of TiN thin films obtained by atomic layer deposition at 350 - 425 oC. We observe a growth of the continuous layers up to a film thickness of 0.69 nm, which is equivalent to 3 monolayers of TiN, followed by the formation of discontinues islands and their coalescence for the thicker films. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle.
    Period14 Dec 2012
    Event titleInternational Conference on Advanced Materials and Nanotechnology, ICAMN 2012
    Event typeConference
    LocationHanoi, Viet Nam
    Degree of RecognitionInternational