DescriptionThis extended study reports on the growth and characterization of TiN thin films obtained by atomic layer deposition at 350 - 425 oC. We observe a growth of the continuous layers up to a film thickness of 0.69 nm, which is equivalent to 3 monolayers of TiN, followed by the formation of discontinues islands and their coalescence for the thicker films. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle.
|Period||14 Dec 2012|
|Event title||International Conference on Advanced Materials and Nanotechnology, ICAMN 2012|
|Location||Hanoi, Viet NamShow on map|
|Degree of Recognition||International|
Documents & Links
TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic