TiN films by Atomic Layer Deposition: Growth and Electrical Characterization down to sub-nm Thickness

Description

This extended study reports on the growth and characterization of TiN thin films obtained by atomic layer deposition at 350 - 425 oC. We observe a growth of the continuous layers up to a film thickness of 0.69 nm, which is equivalent to 3 monolayers of TiN, followed by the formation of discontinues islands and their coalescence for the thicker films. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle.

Period	14 Dec 2012
Event title	International Conference on Advanced Materials and Nanotechnology, ICAMN 2012
Event type	Conference
Location	Hanoi, Viet NamShow on map
Degree of Recognition	International