Material Science
Aluminium Gallium Arsenide
9%
Bar (Metal)
18%
Capacitance
29%
Carrier Concentration
29%
Charge Carrier
21%
Conductivity
7%
Correlation
36%
Density
20%
Devices
48%
Electromigration
9%
Electron Transfer
18%
Electronic Device
7%
Electronic Property
10%
Electronic Structure
18%
Electronics
40%
Electrostriction
13%
Field Effect Transistors
21%
Gallium Arsenide
9%
Heterojunction
27%
Magnetism
20%
Material
37%
Oscillation
9%
Oxide
65%
Oxide Compound
9%
Oxide Interface
36%
Oxygen Vacancy
12%
Permittivity
12%
Piezoelectricity
25%
Pulsed Laser Deposition
9%
Quantum Well
9%
Reflection High-Energy Electron Diffraction
36%
Superconductivity
63%
Surface
53%
Switch
18%
Temperature
36%
Thin Films
54%
Transistor
12%
Two-Dimensional Material
6%
Physics
2D Material
6%
Acoustic Wave
25%
Calculation
20%
Capacitance
27%
Carrier Mobility
6%
Correlation
9%
Current Distribution
9%
Deposition
18%
Dimensions
9%
Dioxide
9%
Distance
9%
Electric Potential
44%
Electron Diffraction
18%
Electron Mobility
6%
Electronic Structure
9%
Electrons
100%
Growth
9%
Images
9%
Increasing
9%
Information Processing
9%
Insulators
19%
Kondo Effect
6%
Magnetoresistance
12%
Magnitude
6%
Microscopy
9%
Orbitals
6%
Oscillation
27%
Oxide
40%
Phonon
7%
Physics
12%
Piezoelectricity
6%
Plum
9%
Potassium Channels
18%
Quantum Transport
6%
Resistive Switching
18%
Room Temperature
12%
Shapes
18%
Superconductivity
6%
Temperature
24%
Thin Films
36%
Transition Element
9%
Transition Metal
9%
Utilization
9%
Vanadium
9%
Variations
24%
Width
10%
Chemistry
Charge Carrier
9%
Density
25%
Electron Particle
45%
Electronic Band Structure
18%
Electronic State
9%
Liquid Film
18%
Nonconductor
7%
Oxide
21%
Phase Separation
18%
Plasma
7%
Reflection High Energy Electron Diffraction
18%
Surface
10%
Surface Acoustic Wave
18%
Thickness
18%
Voltage
25%