1992 …2020

Research output per year

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Research Output

1992

Initial oxidation of Si(111)7x7

Salm, C., Keim, E. G., Wormeester, H., Wentink, D. J. & van Silfhout, A., 17 Nov 1992, p. -.

Research output: Contribution to conferencePoster

Initial oxidation of Si(111)7x7 surface by N2O and O2

Salm, C., Keim, E. G., Wormeester, H., Wentink, D. J. & van Silfhout, A., 16 Dec 1992, p. -.

Research output: Contribution to conferencePoster

N2O and O2 adsorption on Si(111)7x7

Salm, C., Wentink, D. J., Wormeester, H. & Keim, E. G., 22 Apr 1992, p. -.

Research output: Contribution to conferencePoster

N2O and O2 adsorption on Si(111)7x7

Salm, C., Wentink, D. J., Wormeester, H. & Keim, E. G., 3 Apr 1992, p. -.

Research output: Contribution to conferencePoster

1993

On the Growth of Poly-GeSi Alloys

Salm, C., Klappe, J. G. E., Holleman, J. & Woerlee, P. H., 17 Nov 1993, p. -.

Research output: Contribution to conferencePoster

1994

Advantages of polycrystalline GexSi1-x over polycrystalline Si in IC-devices

Salm, C., Rem, J. B., Klootwijk, J. H., Holleman, J. & Woerlee, P. H., 16 Nov 1994, p. -.

Research output: Contribution to conferencePoster

Analysis of XDR texture and morphology of polycrystalline GexSi1-x alloys (0

Salm, C., Klappe, J. G. E., Holleman, J., Rem, J. B. & Woerlee, P. H., 30 Jun 1994, p. -.

Research output: Contribution to conferencePoster

Fabrication of a photodiode and a MOSFET in the RiM practicum

Salm, C., Klootwijk, J. H. & Rem, J. B., 16 Nov 1994, p. -.

Research output: Contribution to conferencePoster

Low temperature oxides for thin film transistor applications

Rem, J. B., Salm, C., Klootwijk, J. H., Holleman, J. & Verweij, J. F., 16 Nov 1994, p. -.

Research output: Contribution to conferencePoster

XRD texture and morphology analysis of polycrystalline LPCVD germanium-silicon

Salm, C., Klappe, J. G. E., Holleman, J., Rem, J. B. & Woerlee, P. H., 22 Nov 1994, Materials Research Society symposia proceedings. p. 721-726

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)
1995

Annealing behavior of GexSi1-x

Salm, C., van Veen, D. T., Rem, J. B., Klootwijk, J. H., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 3 Jul 1995, p. -.

Research output: Contribution to conferencePoster

Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications

Salm, C., van Veen, D. T., Holleman, J. & Woerlee, P. H., 25 Sep 1995, Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95. The Netherlands Congress Centre, The Hague, p. 131-134

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

Salm, C., Van Veen, D. T., Holleman, J. & Woerlee, P. H., 1 Jan 1995, ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. de Graaff, H. C. & van Kranenburg, H. (eds.). IEEE Computer Society, p. 131-134 4 p. 5435993

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
3 Citations (Scopus)
7 Downloads (Pure)

Germanium-Silicon, the future gate material for sub 0.25 um MOSFETs 1. About the material properties

Salm, C., van Veen, D. T., Schmitz, J. & Woerlee, P. H., 20 Dec 1995, Veldhoven

Research output: Other contributionOther research output

Germanium-Silicon, the future gate material for sub 0.25 um MOSFETs 2. About the device properties

Salm, C., van Veen, D. T., Schmitz, J. & Woerlee, P. H., 20 Dec 1995, Veldhoven

Research output: Other contributionOther research output

Hall and resistivity measurements on poly-Ge0.3Si0.7 and poly-Si

van Veen, D. T., Salm, C., Holleman, J. & Woerlee, P. H., 14 Jun 1995, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

Hall mobility and resistivity of p-type doped polycrystalline GeSi and Si

Salm, C., van Veen, D. T., Holleman, J. & Woerlee, P. H., 1 May 1995, Veldhoven

Research output: Other contributionOther research output

Initial growth of polycrystalline Si and GeSi alloys in an RTP system

Rem, J. B., Salm, C., Klootwijk, J. H., Weusthof, M. H. H., Holleman, J. & Verweij, J. F., 17 Apr 1995, Materials Research Society Symposium Proceedings Volume 387, Rapid Thermal and Integrated Processing IV. San Francisco, Californie, U.S.A., p. 323-328

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

RTMP study of the nucleation of polycrystalline Si and GexSi1-x alloys

Rem, J. B., Salm, C., Klootwijk, J. H. & Weusthof, M. H. H., 3 Jul 1995, Acquafredda di Maratea, Italy

Research output: Other contributionOther research output

RTP annealing of SiO2 layers for non volatile memory application

Klootwijk, J. H., Salm, C., Rem, J. B., van Kranenburg, H., Woerlee, P. H. & Wallinga, H., 3 Jul 1995, Acquafredda di Maratea, Italy

Research output: Other contributionOther research output

Selective growth of GexSi1-x for elevated source and drain in deep submicron MOS

Salm, C. & Woerlee, P. H., 14 Jun 1995, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

1996

1/f noise in polycrystalline GeSi

Salm, C., Chen, X. Y., Hamaeme, E. H. & Hooge, F. N., 5 Jun 1996, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

Realisation of a 0.25 um NMOSFET using GexSi1-x (x

Salm, C., Schmitz, J., Martens, M. C., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 9 Sep 1996, Proceedings of the 26th European Solid State Device Research Conference (ESSDERC'96). Bologna, Italy, p. 601-604

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
4 Downloads (Pure)

Realisation of a 0.25 um NMOS with a GeSi gate

Salm, C., Schmitz, J., Martens, M. C. & Woerlee, P. H., 5 Jun 1996, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

Realisation of a 0.25 μm NMOSFET using GexSi1-x(x≪0.4) as Gate Material

Salm, C., Schmitz, J., Martens, M. C., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 1 Jan 1996, ESSDERC 1996: Proceedings of the 26th European Solid State Device Research Conference. Rudan, M. & Baccarani, G. (eds.). Piscataway, NJ: IEEE Computer Society, p. 601-604 4 p. 5436139

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
1 Citation (Scopus)
9 Downloads (Pure)
1997

Diffusion and electrical properties of boron and Arsenic doped poly-Si and poly-GexSi1-x (x~0.3) as gate material for sub-0.25 um complementary metal oxide semiconductor applications

Salm, C., van Veen, D. T., Veen, D. T., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 1997, In : Journal of the Electrochemical Society. 144, 10, p. 3665-3673 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
51 Citations (Scopus)
42 Downloads (Pure)

Gate-Workfunction Engineering Using Poly-(Si,Ge) for High-Performance 0.18um CMOS Technology

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H., Stolk, P. A. & Gravesteijn, D. J., 1 Dec 1997, International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM Technical Digest. Piscataway, NJ: IEEE, p. 829-832 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1997).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
22 Downloads (Pure)

High-Performance Deep Submicron MOSTs With Polycrystalline-(Si,Ge) Gates

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H. & Gravesteijn, D. J., 6 Jun 1997, VLSI TSA. Taiwan, p. 311-315 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
7 Citations (Scopus)
8 Downloads (Pure)

Polycrystalline germanium-silicon for advanced CMOS technologies

Salm, C., 12 Sep 1997, Enschede: Universiteit Twente. 111 p.

Research output: ThesisPhD Thesis - Research UT, graduation UT

Teleleren: het vakgebied halfgeleider devices naar de student toegebracht

Hovius, J. & Salm, C., 28 Nov 1997, University of Twente, Enschede, the Netherlands

Research output: Other contributionOther research output

1998

Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

Salm, C., Klootwijk, J. H., Houtsma, V. E., Ponomarev, Y. V. & Woerlee, P. H., 26 Nov 1998, Proceedings of SAFE'98. Mierlo, p. 473-476 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., Woerlee, P. H. & Hof, A. J., 3 Dec 1998, Proceedings of the SISC. San Diego, USA, p. 41-42 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Downscaling of LPCVD High Temperature Oxides: A feasibility study

Salm, C., Klootwijk, J. H., Weusthof, M. H. H. & Woerlee, P. H., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 477-480 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Gate Current and Oxide Reliability in p+ Poly MOS Capacitors with Poly-Si and Poly-Ge0.3 Si0.7 Gate Material

Salm, C., Klootwijk, J. H., Ponomarev, Y., Boos, P. W. M., Boos, P. W. M., Gravesteijn, D. J. & Woerlee, P. H., 1998, In : IEEE electron device letters. 19, 19, p. 213-215 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
15 Citations (Scopus)
92 Downloads (Pure)

Gate oxide reliability for deep submicron PMOS Si and GeSi gate technologies

Salm, C., Klootwijk, J. H., Ponomarev, Y. V., Boos, P. W. M. & Gravesteijn, D. J., 23 Jun 1998, Enschede, the Netherlands

Research output: Other contributionOther research output

Gate Oxide Reliabily for Deep Submicron PMOS Si and GeSi Gate Technologies

Salm, C., Klootwijk, J. H., Ponomarev, Y. V., Boos, P. W. M., Gravesteijn, D. J. & Woerlee, P. H., 26 Nov 1998, Mierlo, the Netherlands

Research output: Other contributionOther research output

How to Solve the Main Reliability Problem in Future IC Devices: Modeling the Stress and Electromigration

Dekker, M., Petrescu, V., Rijnsburger, M., Salm, C. & Mouthaan, A. J., 23 Jun 1998, Enschede, the Netherlands

Research output: Other contributionOther research output

Low Frequency Noise in Boron Doped Polycrystalline SiGe Thin Film Resistors

Chen, X. Y., Salm, C. & van Rheenen, A. D., 20 Dec 1998, Proceedings of IEDMS'98. Tainan, Taiwan, p. 242-243 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

LPCVD of GexSi1-x films using SiH4 and GeH4 source gases

Kovalgin, A. Y., Holleman, J., Salm, C., Woerlee, P. H. & Ponomarev, Y. V., 26 Jun 1998, Enschede, the Netherlands

Research output: Other contributionOther research output

LPCVD of GeXSi1-x Films Using SiH4 and GeH4 Source Gases

Kovalgin, A. Y., Holleman, J., Salm, C., Woerlee, P. H. & Ponomarev, Y. V., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 311-317 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Mechanical Stress Evolution and the Blech Length: 2D Simulation of Early Electromigration Effects

Petrescu, V., Mouthaan, A. J., Schoenmaker, W. & Salm, C., 1998, In : Microelectronics reliability. 38, 38, p. 1047-1050 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Microelectronics Education

Mouthaan, A. J. & Salm, C., 1998, Londen: Kluwer Academic Publishers. 298 p.

Research output: Book/ReportBookAcademic

Optimisation of a Solar Cell

Hovius, J., Leemkuil, H. H., Hensgens, J., Mouthaan, A. J. & Salm, C., 14 May 1998, Proceedings of the Microelectronics Education. Noordwijkerhout, p. 147-150 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Optimisation of a solar cell. Exercise in simulation based training, using the MODEM telelearning concept

Leemkuil, H. H., Hensgens, J., Mouthaan, A. J., Salm, C. & Hovius, J., 1998, Micro-electronics Education. Dordrecht: Kluwer Academic Publishers, p. 147-150 3 p.

Research output: Chapter in Book/Report/Conference proceedingChapterAcademic

Stress-Induced Leakage Current in p+ Poly MOS Capacitors

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P. & Woerlee, P. H., 15 Dec 1998, Veldhoven, the Netherlands

Research output: Other contributionOther research output

1999

1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

Chen, X. Y., Salm, C., Hooge, F. N. & Woerlee, P. H., 1999, In : Solid-state electronics. 1999, 43, p. 1715-1724 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)

Actual Interconnect Issues and Solutions in ULSI Circuits

van Nieuwkasteele-Bystrova, S. N., Dekker, R., Holleman, J., van Kranenburg, H., Kuper, F. G., Mouthaan, A. J., Nguyen Hoang, V., Petrescu, V., Rijnsburger, M., Salm, C. & Woerlee, P. H., 14 Oct 1999, Enschede, The Netherlands

Research output: Other contributionOther research output

Doping dependence of low-frequency noise in polycrystalline SiGe film resistors

Chen, X. Y. & Salm, C., 1999, In : Applied physics letters. 1999, 75, p. 516-518 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Grouwth and properties of IC dielectrics

Kovalgin, A. Y., Isai, I. G., Wang, Z., Houtsma, V. E., Holleman, J., Dekker, R., Salm, C., Woerlee, P. H. & Mouthaan, A. J., 14 Oct 1999, Enschede, The Netherlands

Research output: Other contributionOther research output

Minority carrier tunneling and stress-induced leakage current for p+ gate MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

Houtsma, V. E., Holleman, J., Salm, C., de Haan, I. R., Schmitz, J., Widdershoven, F. P. & Woerlee, P. H., Dec 1999, International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. Piscataway, NJ: IEEE, p. 457-460 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
6 Citations (Scopus)
12 Downloads (Pure)