1992 …2020

Research output per year

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Research Output

1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness

Kolhatkar, J. S., Salm, C. & Wallinga, H., 2001, Proceedings of the SAFE Conference. p. 92-95 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

1/f noise in polycrystalline GeSi

Salm, C., Chen, X. Y., Hamaeme, E. H. & Hooge, F. N., 5 Jun 1996, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

Chen, X. Y., Salm, C., Hooge, F. N. & Woerlee, P. H., 1999, In : Solid-state electronics. 1999, 43, p. 1715-1724 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)

A 3-D circuit model to evaluate CDM performance of Ics

Sowariraj, M. S. B., de Jong, P. C., Salm, C., Mouthaan, A. J. & Kuper, F. G., 1 Nov 2005, In : Microelectronics reliability. 45, 9-11, p. 1425-1429 5 p., 10.1016/j.microrel.2005.07.066.

Research output: Contribution to journalArticleAcademicpeer-review

Actual Interconnect Issues and Solutions in ULSI Circuits

van Nieuwkasteele-Bystrova, S. N., Dekker, R., Holleman, J., van Kranenburg, H., Kuper, F. G., Mouthaan, A. J., Nguyen Hoang, V., Petrescu, V., Rijnsburger, M., Salm, C. & Woerlee, P. H., 14 Oct 1999, Enschede, The Netherlands

Research output: Other contributionOther research output

Adapting to a changing highschool population

Salm, C., Eijkel, J. C. T., van der Heijden, F. & Odijk, M., 10 May 2010, Proceedings of 8th European Workshop on Microelectronics Education, EWME 2010. Darmstadt, Germany: Technische Universitaet Darmstadt, p. 180-184 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
24 Downloads (Pure)

Advantages of polycrystalline GexSi1-x over polycrystalline Si in IC-devices

Salm, C., Rem, J. B., Klootwijk, J. H., Holleman, J. & Woerlee, P. H., 16 Nov 1994, p. -.

Research output: Contribution to conferencePoster

A miniaturized multiwire proportional chamber using CMOS wafer scale post-processing

Blanco Carballo, V. M., Chefdeville, M. A., van der Graaf, H., Salm, C., Aarnink, A. A. I., Smits, S. M., Altpeter, D. M., Timmermans, J., Timmermans, J., Visschers, J. L. & Schmitz, J., 7 Jul 2006, Proceedings of 32nd European Solid State Device Research Conference. IEEE Computer Society Press, p. 129-132 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Analysis of short-circuit transients in the LHC main dipole circuit

Liakopoulou, A., Annema, A. J., Bortot, L., Charifoulline, Z., MacIejewski, M., Prioli, M., Ravaioli, E., Salm, C., Schmitz, J. & Verweij, A. P., 19 Jun 2020, In : Journal of physics: Conference series. 1559, 1, 012077.

Research output: Contribution to journalConference articleAcademicpeer-review

Open Access
File
1 Downloads (Pure)

Analysis of Short-Circuit Transients in the LHC Main Dipole Circuit

Liakopoulou, A., Annema, A. J., Bortot, L., Charifoulline, Z., Maciejewski, M., Prioli, M., Ravaioli, E., Salm, C., Schmitz, J. & Verweij, A. P., 2019. 1 p.

Research output: Contribution to conferenceAbstract

Open Access
File
16 Downloads (Pure)

Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

Kolhatkar, J., Salm, C. & Wallinga, H., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 42-45 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Analysis of XDR texture and morphology of polycrystalline GexSi1-x alloys (0

Salm, C., Klappe, J. G. E., Holleman, J., Rem, J. B. & Woerlee, P. H., 30 Jun 1994, p. -.

Research output: Contribution to conferencePoster

An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., Salm, C., Schmitz, J., Smits, S., Timmermans, J., Timmermans, J. & Visschers, J. L., 3 Dec 2005, In : Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment. 556, 2, p. 490-494 5 p., 10.1016/j.nima.2005.11.065.

Research output: Contribution to journalArticleAcademicpeer-review

71 Citations (Scopus)

An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J. & Visschers, J. L., Nov 2005, Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands: STW, p. 139-142 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Open Access
File
51 Downloads (Pure)

An Initial study on The Reliability of Power Semiconductor Devices

Boksteen, B. K., Hueting, R. J. E., Salm, C. & Schmitz, J., 18 Nov 2010, Proceedings of STW.ICT Conference 2010. Utrecht: STW, p. 68-72 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

File
133 Downloads (Pure)

An integrated gaseous detector using microfabrication post-processing technology

Blanco Carballo, V. M., Salm, C., Smits, S. M., Schmitz, J., Chefdeville, M. A., van der Graaf, H., Timmermans, J., Timmermans, J. & Visschers, J. L., 23 Nov 2006, Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW, p. 369-372 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

An integrated micromegas UV-photon detector

Melai, J., Lyashenko, A., Breskin, A., van der Graaf, H., Timmermans, J., Timmermans, J., Visschers, J., Salm, C. & Schmitz, J., 8 Jul 2010, In : Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment. 633, p. 194-197 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

An integrated single photon detector array using porous anodic alumina

Melai, J., Salm, C., Schmitz, J., Smits, S. & Visschers, J., 2 Jun 2006. 1 p.

Research output: Contribution to conferenceAbstract

Open Access
File

An integrated single photon detector array using porous anodic alumina

Melai, J., Salm, C., Schmitz, J., Smits, S. & Visschers, J., 27 Nov 2006, Proceedings 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW, p. 389-393 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Annealing behavior of GexSi1-x

Salm, C., van Veen, D. T., Rem, J. B., Klootwijk, J. H., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 3 Jul 1995, p. -.

Research output: Contribution to conferencePoster

Antenna Ratio Power Law Dependence of Plasma Process-Induced Oxide Failure Fraction

Wang, Z., Salm, C., Kuper, F. G. & Scarpa, A., 29 Nov 2000, Proceedings of SAFE conference 2000. Veldhoven, The Netherlands, p. - 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

A Radiation Imaging Detector Made by Postprocessing a Standard CMOS Chip

Blanco Carballo, V. M., Chefdeville, M. A., Fransen, M., van der Graaf, H., Melai, J., Salm, C., Schmitz, J., Timmermans, J. & Timmermans, J., 20 May 2008, In : IEEE electron device letters. 29, DTR08-9/6, p. 585-588 4 p., 10.1109/LED.2008.925649.

Research output: Contribution to journalArticleAcademicpeer-review

File
24 Citations (Scopus)
190 Downloads (Pure)

A reliability model for interlayer dielectric cracking during fast thermal cycling

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 21 Oct 2003, Advanced Metallization Conference (AMC 2003). Ray, G. W., Smy, T., Ohta, T. & Tsujimura, M. (eds.). Warrendale, PA: Materials Research Society, p. 295-299 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
5 Citations (Scopus)
92 Downloads (Pure)

A Reliability Model for interlayer dielectrics cracking during very fast thermal cycling

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 21 Oct 2003, Proceedings of Advanced Metallization Conference AMC 2003. p. -

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

A UV sensitive integrated micromegas with timepix readout

Melai, J., Breskin, A., Cortesi, M., Bilevych, Y., Bilevych, Y., Fransen, M., van der Graaf, H., Visschers, J., Blanco Carballo, V. M., Salm, C. & Schmitz, J., 6 Jul 2010, In : Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment. 628, p. 133-137 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Charge amplitude distribution of the Gossip gaseous pixel detector

Blanco Carballo, V. M., Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Gromov, V., Hartjes, F., Kluit, R., Koffeman, E., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J., Timmermans, J. & Visschers, J. L., 11 Dec 2007, In : Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment. Volume 583, 1/issue 1, p. 42-48 7 p., 10.1016/j.nima.2007.08.199.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Charge plasma diode - a novel device concept

Rajasekharan, B., Hueting, R. J. E., Salm, C., Hoang, T. & Schmitz, J., 27 Nov 2008, Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands: STW, p. 576-579 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Charging induced damage on complex-antenna test structures

Wang, Z., Ackaert, J., Salm, C. & Kuper, F. G., 2001, Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001. Utrecht, The Netherlands: STW, p. 220-223 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

CMOS-MEMS Post Processing Compatible Capacitively Transduced GeSi Resonators

Kazmi, S. N. R., Aarnink, A. A. I., Salm, C. & Schmitz, J., 25 Jul 2012, Proceedings of 2012 IEEE International Frequency Control Symposium (IFCS). USA: IEEE Electron Devices Society, p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Comparison of C-V measurement methods for RF-MEMS capacitive switches

Wang, J., Salm, C. & Schmitz, J., 26 Mar 2013, IEEE International Conference on Microelectronic Test Structures, ICMTS 2013. USA: IEEE Electron Devices Society, p. 53-58 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

Salm, C., Klootwijk, J. H., Houtsma, V. E., Ponomarev, Y. V. & Woerlee, P. H., 26 Nov 1998, Proceedings of SAFE'98. Mierlo, p. 473-476 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Considerations on using SU-8 as a construction material for high aspect ratio structures

Melai, J., Salm, C., Smits, S. M., Blanco Carballo, V. M., Schmitz, J. & Hageluken, B., 29 Nov 2007, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands: STW, p. 529-534 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
75 Downloads (Pure)

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

Kolhatkar, J. S., Salm, C., Knitel, M. J. & Wallinga, H., 17 Oct 2005, Proceedings of the 32nd European Solid-State Device Research Conference. Kovalguine, A. (ed.). Piscataway: IEEE Computer Society, p. 83-86 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
8 Citations (Scopus)
40 Downloads (Pure)

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Ackaert, J., Wang, Z., de Backer, E. & Salm, C., 10 Dec 2002, p. 45-48. 4 p.

Research output: Contribution to conferencePaper

File
8 Citations (Scopus)
41 Downloads (Pure)

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Wang, Z., Ackaert, J., Salm, C., de Backer, E., van den Bosch, G. & Zawalski, W., 7 Nov 2002, 9th International Symposium on Physics and Failure Analysis 2002. Piscataway, NJ: IEEE, p. 242-245 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

44 Downloads (Pure)

Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide

Ackaert, J. G. G., Wang, Z., Backer, E. & Salm, C., 6 Jun 2002, Proceedings of 7th International symposium of Plasma Process-Induced Damage. Santa Clara, California: American Vacuum Society, p. 45-48 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., Woerlee, P. H. & Hof, A. J., 3 Dec 1998, Proceedings of the SISC. San Diego, USA, p. 41-42 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations

Mouthaan, A. J., Salm, C., Lunenborg, M. M., Lunenborg, M. M., de Wolf, M., de Wolf, M. A. R. C. & Kuper, F. G., 2000, In : Microelectronics reliability. 2000, 6, p. 909-917 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma

Kazmi, S. N. R., Salm, C. & Schmitz, J., Oct 2013, In : Microelectronic engineering. 110, p. 311-314 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Degradation in Multi Layer Interconnects by Fast Thermal Cycling Stress

Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 18 Dec 2001, p. -.

Research output: Contribution to conferencePoster

Diffusion and electrical properties of boron and Arsenic doped poly-Si and poly-GexSi1-x (x~0.3) as gate material for sub-0.25 um complementary metal oxide semiconductor applications

Salm, C., van Veen, D. T., Veen, D. T., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 1997, In : Journal of the Electrochemical Society. 144, 10, p. 3665-3673 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
51 Citations (Scopus)
42 Downloads (Pure)

Dimensional scaling effects on transport properties of p-i-n diodes

Rajasekharan, B., Salm, C., Hueting, R. J. E., Hoang, T., van der Wiel, W. G. & Schmitz, J., 29 Nov 2007, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands: STW, p. 457-459 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

Rajasekharan, B., Salm, C., Hueting, R. J. E., Hoang, T. & Schmitz, J., 13 Mar 2008, Proceedings of the 9th Conference on ULtimate Integration on Silicon. Piscataway: IEEE Computer Society Press, p. 195-198 4 p. 10.1109/ULIS.2008.4527172. (Electron Device Society; no. DTR08-9).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
13 Citations (Scopus)
70 Downloads (Pure)

Discharge Protection and Ageing of Micromegas Pixel Detectors

Aarts, A. A., Blanco Carballo, V. M., Chefdeville, M. A., Colas, P., Dunand, S., Fransen, M., van der Graaf, H., Giomataris, Y., Hartjes, F., Koffeman, G., Melai, J., Peek, H., Riegler, W., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J., Timmermans, J., Visschers, J. L. & Wyrsch, N., 29 Oct 2006, 2006 IEEE Nuclear Science Symposium Conference Record. San Diego, CA, USA: IEEE Nuclear & Plasma Sciences Society, p. 3865-3869 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Doping dependence of low-frequency noise in polycrystalline SiGe film resistors

Chen, X. Y. & Salm, C., 1999, In : Applied physics letters. 1999, 75, p. 516-518 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Downscaling of LPCVD High Temperature Oxides: A feasibility study

Salm, C., Klootwijk, J. H., Weusthof, M. H. H. & Woerlee, P. H., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 477-480 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices

De Jong, M. J., Salm, C. & Schmitz, J., 30 Jun 2020, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. IEEE, 9129540. (IEEE International Reliability Physics Symposium Proceedings; vol. 2020-April).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Effect of current crowding on electromigration lifetime investigated by simulation and experiment

Nguyen, V. H. & Salm, C., 11 May 2010, In : Computational materials science. 49, 4-Suppl.1, p. S235-S238 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Effect of thermal gradients on the electromigration lifetime in power electronics

Nguyen, H. V., Salm, C., Krabbenborg, B. H., Weide-Zaage, K., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 26 Jul 2004, 2004 IEEE International Reliability Physics Symposium proceedings: 42nd Annual : Phoenix, Arizona, April 25-29, 2004 . Piscataway, NJ: IEEE, p. 619-620 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)
10 Downloads (Pure)

Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications

Salm, C., van Veen, D. T., Holleman, J. & Woerlee, P. H., 25 Sep 1995, Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95. The Netherlands Congress Centre, The Hague, p. 131-134

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review