1992 …2020

Research output per year

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Research Output

2002

Fast Temperature Cycling Stress-Induced and Electromigration-Induced Interlayer Dielectric Cracking Failure in Multilevel Interconnection

Nguyen, V. H., Nguyen Van, H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Bisschop, J. J., Mouthaan, A. J. & Kuper, F. G., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 69-74 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs

Sowariraj, M. S. B., Kuper, F. G., Salm, C., Mouthaan, A. J. & Smedes, T., 27 Nov 2002, p. 104-107. 4 p.

Research output: Contribution to conferencePaper

Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs

Sowariraj, M. S. B., Kuper, F. G., Salm, C., Mouthaan, A. J. & Smedes, T., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 104-107 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Porous alumina, an ideal template for electrodeposition of nanowires

Galca, A. C., Kooij, E. S., Wormeester, H., Salm, C., Rector, J., Remhof, A. & Poelsema, B., 27 May 2002, p. -.

Research output: Contribution to conferencePoster

Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime

Nguyen, V. H., Salm, C., Wenzel, R., Mouthaan, A. J. & Kuper, F. G., 2002, Proceedings ESREF 2002. p. 1421-1425 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Citations (Scopus)

Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime

Nguyen, V. H., Nguyen, H., Salm, C., Wenzel, R., Mouthaan, A. J. & Kuper, F. G., 9 Nov 2002, In : Microelectronics reliability. 42, 9-11, p. 1421-1425 5 p., 10.1016/S0026-2714(02)00162-2.

Research output: Contribution to journalArticleAcademicpeer-review

File
51 Downloads (Pure)

Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime

Nguyen, V. H., Salm, C., Wenzel, R., Mouthaan, A. J. & Kuper, F. G., 2002, In : Microelectronics reliability. p. -

Research output: Contribution to journalArticleAcademicpeer-review

Structural and Optical Characterization of Anodized Porous Aluminum Oxide

Galca, A. C., Kooij, E. S., Wormeester, H., Salm, C., Rector, J., Leca, V., Zinine, A. & Poelsema, B., 22 Oct 2002, p. -.

Research output: Contribution to conferencePoster

Temperature effect on antenna protection strategy for plasma-process induced charging damage

Wang, Z., Scarpa, A., Smits, S. M., Salm, C. & Kuper, F. G., 10 Dec 2002, 7th International symposium of Plasma Process-Induced Damage. Piscataway: American Vacuum Society, p. 134-137 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
12 Citations (Scopus)
74 Downloads (Pure)

Temperature effect on protection diode for plasma-process induced charging damage

Wang, Z., Scarpa, A., Smits, S. M., Kuper, F. G. & Salm, C., 27 Nov 2002, p. 127-130. 4 p.

Research output: Contribution to conferencePaper

Temperature Effect on Protection Diode for Plasma-Process Induced Charging Damage

Wang, Z., Scarpa, A., Smits, S. M., Kuper, F. G. & Salm, C., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 127-130 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Test chip for Detecting Thin Film Cracking Induced by Fast Temperature Cycling and Electromigration in Multilevel Interconnect Systems

Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Krabbenborg, B., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 8 Jul 2002, Proceedings of 9th International Symposium on Physics and Failure Analysis 2002. Piscataway, NJ: IEEE, p. 135-139 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)
29 Downloads (Pure)

The influence of technology variation on ggNMOST and SCRs against CDM ESD stress

Sowariraj, M. S. B., Smedes, T., Salm, C., Mouthaan, A. J. & Kuper, F. G., 2002, In : Microelectronics reliability. 42, p. 1287-1292 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress

Sowariraj, M. S. B., Salm, C., Mouthaan, A. J., Smedes, T. & Kuper, F. G., 9 Nov 2002, In : Microelectronics reliability. 42, 9-11, p. 1287-1292 5 p., 10.1016/S0026-2714(02)00136-1.

Research output: Contribution to journalArticleAcademicpeer-review

The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress

Sowariraj, M. S. B., Salm, C., Mouthaan, A. J., Smedes, T. & Kuper, F. G., 7 Oct 2002, Proceedings for ESREF conference 2002. p. 1287-1292 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
2001

1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness

Kolhatkar, J. S., Salm, C. & Wallinga, H., 2001, Proceedings of the SAFE Conference. p. 92-95 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Charging induced damage on complex-antenna test structures

Wang, Z., Ackaert, J., Salm, C. & Kuper, F. G., 2001, Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001. Utrecht, The Netherlands: STW, p. 220-223 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Degradation in Multi Layer Interconnects by Fast Thermal Cycling Stress

Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 18 Dec 2001, p. -.

Research output: Contribution to conferencePoster

Fast thermal cycling stress and degredation in multilayer interconnects

Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 2001, p. 136-140. 5 p.

Research output: Contribution to conferencePaper

Fast Thermal Cycling Stress and Degredations in Multilayer Interconnects

Nguyen, V. H., Salm, C., Vroemen, J., Krabbenborg, B. H., Bisschop, J. J., Mouthaan, A. J. & Kuper, F. G., 28 Nov 2001, Proceedings of the SAFE Conference. Veldhoven, the Netherlands, p. 136-140 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low Frequency Noise in Poly-Si and Poly-SiGe gated MOSFETS

Johansen, J. A., Figenschau, H., Chen, X. Y., Salm, C. & van Rheenen, A. D., 22 Oct 2001, ICNF 2001. Grainesville, USA, p. 161-164 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources

Kovalgin, A. Y., Holleman, J., Salm, C. & Woerlee, P. H., 22 Oct 2001, Thin Film Transistor Technologies V: proceedings of the international symposium. Pennington, NJ, p. 269-275 7 p. (Proceedings; vol. 2000-31).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Modelling of the reservoir effect on electromigration lifetime

Nguyen, V. H., Salm, C., Mouthaan, A. J. & Kuper, F. G., 9 Jul 2001, Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001. Piscataway, NJ: IEEE, p. 169-173 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)
4 Downloads (Pure)

On low-frequency noise of polycrystalline GexSi1-x for sub-micron CMOS technologies

Chen, X. Y., Johansen, J. A., Salm, C., van Rheenen, A. D. & van Rheenen, A. D., 1 Nov 2001, In : Solid-state electronics. 45, 45, p. 1967-1971 5 p., 10.1016/S0038-1101(01)00242-8.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Oxides: why don't they isolate?

Wang, Z., Bankras, R. G., Isai, I. G., Kolhatkar, J. S., Hof, A. J., Salm, C., Kuper, F. G., Woerlee, P. H. & Holleman, J., 11 Oct 2001, p. -.

Research output: Contribution to conferencePoster

Plasma process-induced latent damage on gate oxide - demonstrated by single-layer and multi-layer antenna structures

Wang, Z., Ackaert, J., Salm, C. & Kuper, F., 2001, 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001). Piscataway, NJ: IEEE Computer Society, p. 220-223 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
27 Downloads (Pure)

Relation between plasma process-induced oxide failure fraction and antenna ratio

Wang, Z., Scarpa, A., Salm, C. & Kuper, F. G., May 2001, 6th International Symposium on Plasma Process-Induced Damage 2001. Piscataway, NJ: IEEE, p. 16-19 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
11 Downloads (Pure)

Temperature acceleration of thin gate-oxide degradation

Salm, C., Houtsma, V. E., Kuper, F. G. & Woerlee, P. H., 2001, p. 174-177. 4 p.

Research output: Contribution to conferencePaper

Temperature Acceleration of Thin Gate-Oxide Degradation

Salm, C., Houtsma, V. E., Kuper, F. G. & Woerlee, P. H., 28 Nov 2001, Proceedings of the SAFE Conference. Veldhoven, the Netherlands, p. 174-177 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Who wants to live forever? Physical Failure Mechanisms that Limit the Life-time of Electronic Components

Sowariraj, M. S. B., Golo-Tosic, N., Nguyen, V. H., Merticaru, A. R., Kuper, F. G. & Salm, C., 12 Nov 2001, p. -.

Research output: Contribution to conferencePoster

2000

Antenna Ratio Power Law Dependence of Plasma Process-Induced Oxide Failure Fraction

Wang, Z., Salm, C., Kuper, F. G. & Scarpa, A., 29 Nov 2000, Proceedings of SAFE conference 2000. Veldhoven, The Netherlands, p. - 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations

Mouthaan, A. J., Salm, C., Lunenborg, M. M., Lunenborg, M. M., de Wolf, M., de Wolf, M. A. R. C. & Kuper, F. G., 2000, In : Microelectronics reliability. 2000, 6, p. 909-917 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates

Ponomarev, Y. V., Stolk, P. A., Salm, C., Schmitz, J. & Woerlee, P. H., 2000, In : IEEE transactions on electron devices. 2000, 4, p. 848-855 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
35 Citations (Scopus)
73 Downloads (Pure)

Low-pressure CVD of Germanium-Silicon films using silane and germane sources

Kovalgin, A. Y., Holleman, J., Salm, C. & Woerlee, P. H., 22 Oct 2000, Proceedings of the 198th Meeting of the Electrochemical Society. Phoenix, USA, p. -

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Metallization Issues in the IC backend

van Nieuwkasteele-Bystrova, S. N., Holleman, J., van Kranenburg, H., Kuper, F. G., Mouthaan, A. J., Nguyen Hoang, V., Nguyen, V. H., Salm, C. & Woerlee, P. H., 12 Oct 2000, Enschede, The Netherlands

Research output: Other contributionOther research output

On Low-frequency noise of polycrystalline Ge xSi-x for Sub-micron CMOS Technologies

Chen, X. Y., Johansen, J. A., Salm, C. & van Rheenen, A. D., 14 Dec 2000, Proceedings ICCCD-2000. Kharagpur, India, p. 187-190

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Simulation of the reservoir effect of different lay outs in multilayer metallisation film

Nguyen, V. H., Salm, C., Kuper, F. G. & Mouthaan, A. J., 19 Dec 2000, Veldhoven, The Netherlands

Research output: Other contributionOther research output

Simulations of Reservoir Effect in Multilevel Al-Based Metallisation

Nguyen, V. H., Salm, C., Kuper, F. G. & Mouthaan, A. J., 29 Nov 2000, Book of abstracts SAFE conference 2000. Veldhoven, The Netherlands, p. 101-105

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1999

1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

Chen, X. Y., Salm, C., Hooge, F. N. & Woerlee, P. H., 1999, In : Solid-state electronics. 1999, 43, p. 1715-1724 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)

Actual Interconnect Issues and Solutions in ULSI Circuits

van Nieuwkasteele-Bystrova, S. N., Dekker, R., Holleman, J., van Kranenburg, H., Kuper, F. G., Mouthaan, A. J., Nguyen Hoang, V., Petrescu, V., Rijnsburger, M., Salm, C. & Woerlee, P. H., 14 Oct 1999, Enschede, The Netherlands

Research output: Other contributionOther research output

Doping dependence of low-frequency noise in polycrystalline SiGe film resistors

Chen, X. Y. & Salm, C., 1999, In : Applied physics letters. 1999, 75, p. 516-518 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Grouwth and properties of IC dielectrics

Kovalgin, A. Y., Isai, I. G., Wang, Z., Houtsma, V. E., Holleman, J., Dekker, R., Salm, C., Woerlee, P. H. & Mouthaan, A. J., 14 Oct 1999, Enschede, The Netherlands

Research output: Other contributionOther research output

Minority carrier tunneling and stress-induced leakage current for p+ gate MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

Houtsma, V. E., Holleman, J., Salm, C., de Haan, I. R., Schmitz, J., Widdershoven, F. P. & Woerlee, P. H., Dec 1999, International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. Piscataway, NJ: IEEE, p. 457-460 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
6 Citations (Scopus)
12 Downloads (Pure)

Plasma-Induced Charging Damage of Gate Oxides

Wang, Z., Tanner, P. G., Salm, C., Mouthaan, A. J., Kuper, F. G., Andriesse, M. & van der Drift, E., 24 Nov 1999, SAFE'99. Mierlo, The Netherlands, p. 593-600 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

SILC in MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

Houtsma, V. E., Holleman, J., Salm, C. & Woerlee, P. H., 1999, In : Microelectronic engineering. 1999, 48, p. 415-418 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., Widdershoven, F. P. & Woerlee, P. H., 1999, In : IEEE electron device letters. 1999, 20, p. 314-316 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
6 Citations (Scopus)
48 Downloads (Pure)
1998

Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

Salm, C., Klootwijk, J. H., Houtsma, V. E., Ponomarev, Y. V. & Woerlee, P. H., 26 Nov 1998, Proceedings of SAFE'98. Mierlo, p. 473-476 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., Woerlee, P. H. & Hof, A. J., 3 Dec 1998, Proceedings of the SISC. San Diego, USA, p. 41-42 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Downscaling of LPCVD High Temperature Oxides: A feasibility study

Salm, C., Klootwijk, J. H., Weusthof, M. H. H. & Woerlee, P. H., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 477-480 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Gate Current and Oxide Reliability in p+ Poly MOS Capacitors with Poly-Si and Poly-Ge0.3 Si0.7 Gate Material

Salm, C., Klootwijk, J. H., Ponomarev, Y., Boos, P. W. M., Boos, P. W. M., Gravesteijn, D. J. & Woerlee, P. H., 1998, In : IEEE electron device letters. 19, 19, p. 213-215 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
15 Citations (Scopus)
92 Downloads (Pure)