1992 …2020

Research output per year

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Research Output

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Conference contribution
1994

XRD texture and morphology analysis of polycrystalline LPCVD germanium-silicon

Salm, C., Klappe, J. G. E., Holleman, J., Rem, J. B. & Woerlee, P. H., 22 Nov 1994, Materials Research Society symposia proceedings. p. 721-726

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)
1995

Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications

Salm, C., van Veen, D. T., Holleman, J. & Woerlee, P. H., 25 Sep 1995, Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95. The Netherlands Congress Centre, The Hague, p. 131-134

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

Salm, C., Van Veen, D. T., Holleman, J. & Woerlee, P. H., 1 Jan 1995, ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. de Graaff, H. C. & van Kranenburg, H. (eds.). IEEE Computer Society, p. 131-134 4 p. 5435993

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
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3 Citations (Scopus)
7 Downloads (Pure)

Initial growth of polycrystalline Si and GeSi alloys in an RTP system

Rem, J. B., Salm, C., Klootwijk, J. H., Weusthof, M. H. H., Holleman, J. & Verweij, J. F., 17 Apr 1995, Materials Research Society Symposium Proceedings Volume 387, Rapid Thermal and Integrated Processing IV. San Francisco, Californie, U.S.A., p. 323-328

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
1996

Realisation of a 0.25 um NMOSFET using GexSi1-x (x

Salm, C., Schmitz, J., Martens, M. C., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 9 Sep 1996, Proceedings of the 26th European Solid State Device Research Conference (ESSDERC'96). Bologna, Italy, p. 601-604

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
4 Downloads (Pure)

Realisation of a 0.25 μm NMOSFET using GexSi1-x(x≪0.4) as Gate Material

Salm, C., Schmitz, J., Martens, M. C., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 1 Jan 1996, ESSDERC 1996: Proceedings of the 26th European Solid State Device Research Conference. Rudan, M. & Baccarani, G. (eds.). Piscataway, NJ: IEEE Computer Society, p. 601-604 4 p. 5436139

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
1 Citation (Scopus)
9 Downloads (Pure)
1997

Gate-Workfunction Engineering Using Poly-(Si,Ge) for High-Performance 0.18um CMOS Technology

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H., Stolk, P. A. & Gravesteijn, D. J., 1 Dec 1997, International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM Technical Digest. Piscataway, NJ: IEEE, p. 829-832 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1997).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
23 Downloads (Pure)

High-Performance Deep Submicron MOSTs With Polycrystalline-(Si,Ge) Gates

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H. & Gravesteijn, D. J., 6 Jun 1997, VLSI TSA. Taiwan, p. 311-315 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
7 Citations (Scopus)
8 Downloads (Pure)
1998

Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

Salm, C., Klootwijk, J. H., Houtsma, V. E., Ponomarev, Y. V. & Woerlee, P. H., 26 Nov 1998, Proceedings of SAFE'98. Mierlo, p. 473-476 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., Woerlee, P. H. & Hof, A. J., 3 Dec 1998, Proceedings of the SISC. San Diego, USA, p. 41-42 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Downscaling of LPCVD High Temperature Oxides: A feasibility study

Salm, C., Klootwijk, J. H., Weusthof, M. H. H. & Woerlee, P. H., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 477-480 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low Frequency Noise in Boron Doped Polycrystalline SiGe Thin Film Resistors

Chen, X. Y., Salm, C. & van Rheenen, A. D., 20 Dec 1998, Proceedings of IEDMS'98. Tainan, Taiwan, p. 242-243 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

LPCVD of GeXSi1-x Films Using SiH4 and GeH4 Source Gases

Kovalgin, A. Y., Holleman, J., Salm, C., Woerlee, P. H. & Ponomarev, Y. V., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 311-317 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Optimisation of a Solar Cell

Hovius, J., Leemkuil, H. H., Hensgens, J., Mouthaan, A. J. & Salm, C., 14 May 1998, Proceedings of the Microelectronics Education. Noordwijkerhout, p. 147-150 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1999

Minority carrier tunneling and stress-induced leakage current for p+ gate MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

Houtsma, V. E., Holleman, J., Salm, C., de Haan, I. R., Schmitz, J., Widdershoven, F. P. & Woerlee, P. H., Dec 1999, International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. Piscataway, NJ: IEEE, p. 457-460 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
6 Citations (Scopus)
12 Downloads (Pure)

Plasma-Induced Charging Damage of Gate Oxides

Wang, Z., Tanner, P. G., Salm, C., Mouthaan, A. J., Kuper, F. G., Andriesse, M. & van der Drift, E., 24 Nov 1999, SAFE'99. Mierlo, The Netherlands, p. 593-600 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2000

Antenna Ratio Power Law Dependence of Plasma Process-Induced Oxide Failure Fraction

Wang, Z., Salm, C., Kuper, F. G. & Scarpa, A., 29 Nov 2000, Proceedings of SAFE conference 2000. Veldhoven, The Netherlands, p. - 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low-pressure CVD of Germanium-Silicon films using silane and germane sources

Kovalgin, A. Y., Holleman, J., Salm, C. & Woerlee, P. H., 22 Oct 2000, Proceedings of the 198th Meeting of the Electrochemical Society. Phoenix, USA, p. -

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

On Low-frequency noise of polycrystalline Ge xSi-x for Sub-micron CMOS Technologies

Chen, X. Y., Johansen, J. A., Salm, C. & van Rheenen, A. D., 14 Dec 2000, Proceedings ICCCD-2000. Kharagpur, India, p. 187-190

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Simulations of Reservoir Effect in Multilevel Al-Based Metallisation

Nguyen, V. H., Salm, C., Kuper, F. G. & Mouthaan, A. J., 29 Nov 2000, Book of abstracts SAFE conference 2000. Veldhoven, The Netherlands, p. 101-105

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2001

1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness

Kolhatkar, J. S., Salm, C. & Wallinga, H., 2001, Proceedings of the SAFE Conference. p. 92-95 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Charging induced damage on complex-antenna test structures

Wang, Z., Ackaert, J., Salm, C. & Kuper, F. G., 2001, Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001. Utrecht, The Netherlands: STW, p. 220-223 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Fast Thermal Cycling Stress and Degredations in Multilayer Interconnects

Nguyen, V. H., Salm, C., Vroemen, J., Krabbenborg, B. H., Bisschop, J. J., Mouthaan, A. J. & Kuper, F. G., 28 Nov 2001, Proceedings of the SAFE Conference. Veldhoven, the Netherlands, p. 136-140 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low Frequency Noise in Poly-Si and Poly-SiGe gated MOSFETS

Johansen, J. A., Figenschau, H., Chen, X. Y., Salm, C. & van Rheenen, A. D., 22 Oct 2001, ICNF 2001. Grainesville, USA, p. 161-164 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources

Kovalgin, A. Y., Holleman, J., Salm, C. & Woerlee, P. H., 22 Oct 2001, Thin Film Transistor Technologies V: proceedings of the international symposium. Pennington, NJ, p. 269-275 7 p. (Proceedings; vol. 2000-31).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Modelling of the reservoir effect on electromigration lifetime

Nguyen, V. H., Salm, C., Mouthaan, A. J. & Kuper, F. G., 9 Jul 2001, Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001. Piscataway, NJ: IEEE, p. 169-173 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)
4 Downloads (Pure)

Plasma process-induced latent damage on gate oxide - demonstrated by single-layer and multi-layer antenna structures

Wang, Z., Ackaert, J., Salm, C. & Kuper, F., 2001, 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001). Piscataway, NJ: IEEE Computer Society, p. 220-223 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
27 Downloads (Pure)

Relation between plasma process-induced oxide failure fraction and antenna ratio

Wang, Z., Scarpa, A., Salm, C. & Kuper, F. G., May 2001, 6th International Symposium on Plasma Process-Induced Damage 2001. Piscataway, NJ: IEEE, p. 16-19 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
11 Downloads (Pure)

Temperature Acceleration of Thin Gate-Oxide Degradation

Salm, C., Houtsma, V. E., Kuper, F. G. & Woerlee, P. H., 28 Nov 2001, Proceedings of the SAFE Conference. Veldhoven, the Netherlands, p. 174-177 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2002

Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

Kolhatkar, J., Salm, C. & Wallinga, H., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 42-45 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Wang, Z., Ackaert, J., Salm, C., de Backer, E., van den Bosch, G. & Zawalski, W., 7 Nov 2002, 9th International Symposium on Physics and Failure Analysis 2002. Piscataway, NJ: IEEE, p. 242-245 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

44 Downloads (Pure)

Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide

Ackaert, J. G. G., Wang, Z., Backer, E. & Salm, C., 6 Jun 2002, Proceedings of 7th International symposium of Plasma Process-Induced Damage. Santa Clara, California: American Vacuum Society, p. 45-48 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modelling

Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 2002, Proceedings ESREF 2002. p. 1415-1420 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Fast Temperature Cycling Stress-Induced and Electromigration-Induced Interlayer Dielectric Cracking Failure in Multilevel Interconnection

Nguyen, V. H., Nguyen Van, H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Bisschop, J. J., Mouthaan, A. J. & Kuper, F. G., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 69-74 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs

Sowariraj, M. S. B., Kuper, F. G., Salm, C., Mouthaan, A. J. & Smedes, T., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 104-107 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime

Nguyen, V. H., Salm, C., Wenzel, R., Mouthaan, A. J. & Kuper, F. G., 2002, Proceedings ESREF 2002. p. 1421-1425 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Citations (Scopus)

Temperature effect on antenna protection strategy for plasma-process induced charging damage

Wang, Z., Scarpa, A., Smits, S. M., Salm, C. & Kuper, F. G., 10 Dec 2002, 7th International symposium of Plasma Process-Induced Damage. Piscataway: American Vacuum Society, p. 134-137 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
12 Citations (Scopus)
74 Downloads (Pure)

Temperature Effect on Protection Diode for Plasma-Process Induced Charging Damage

Wang, Z., Scarpa, A., Smits, S. M., Kuper, F. G. & Salm, C., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 127-130 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Test chip for Detecting Thin Film Cracking Induced by Fast Temperature Cycling and Electromigration in Multilevel Interconnect Systems

Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Krabbenborg, B., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 8 Jul 2002, Proceedings of 9th International Symposium on Physics and Failure Analysis 2002. Piscataway, NJ: IEEE, p. 135-139 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)
29 Downloads (Pure)

The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress

Sowariraj, M. S. B., Salm, C., Mouthaan, A. J., Smedes, T. & Kuper, F. G., 7 Oct 2002, Proceedings for ESREF conference 2002. p. 1287-1292 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
2003

A reliability model for interlayer dielectric cracking during fast thermal cycling

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 21 Oct 2003, Advanced Metallization Conference (AMC 2003). Ray, G. W., Smy, T., Ohta, T. & Tsujimura, M. (eds.). Warrendale, PA: Materials Research Society, p. 295-299 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
5 Citations (Scopus)
93 Downloads (Pure)

A Reliability Model for interlayer dielectrics cracking during very fast thermal cycling

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 21 Oct 2003, Proceedings of Advanced Metallization Conference AMC 2003. p. -

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Electrothermomigration-induced failure in power IC metallization

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., Nov 2003, Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003. Utrecht, The Netherlands: STW, p. 622-630 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Measurement and extraction of RTS parameters under 'Switched Biased' conditions in MOSFETS

Kolhatkar, J. S., van der Wel, A. P., Klumperink, E. A. M., Salm, C., Nauta, B. & Wallinga, H., Aug 2003, 17th International Conference on Noise and Fluctuations. BRNO , Czech Republic: Czech Noise Research Laboratory (CNRL), p. 237-240 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
68 Downloads (Pure)

Plasma Charging Damage Induced by a Power Ramp Down Step in the end of Plasma Enhanced Chemical Vapour Deposition (PECVD) Process

Wang, Z., Ackaert, J. G. G., Salm, C., Kuper, F. G., Bessemans, K. & De Backer, E., 25 Nov 2003, Proceedings of Semiconductor Advances for Future Electronics SAFE 2003. p. 766-770 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Separation of random telegraph signals from 1/f noise in MOSFETs

Kolhatkar, J. S., Salm, C. & Wallinga, H., 25 Nov 2003, Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003. Utrecht, The Netherlands: STW, p. 614-617 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Study on the influence of package parasitics and substrate resistance on the Charged Device Model(CDM) failure levels - possible protection methodology

Sowariraj, M. S. B., Smedes, T., Salm, C., Mouthaan, A. J. & Kuper, F. G., 25 Nov 2003, Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003. Utrecht, The Netherlands: STW, p. 657-662 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

2004

Effect of thermal gradients on the electromigration lifetime in power electronics

Nguyen, H. V., Salm, C., Krabbenborg, B. H., Weide-Zaage, K., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 26 Jul 2004, 2004 IEEE International Reliability Physics Symposium proceedings: 42nd Annual : Phoenix, Arizona, April 25-29, 2004 . Piscataway, NJ: IEEE, p. 619-620 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)
10 Downloads (Pure)

Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

Kolhatkar, J. S., Hoekstra, E., Hof, A. J., Salm, C., Wallinga, H. & Schmitz, J., 25 Nov 2004, Proceedings SAFE & ProRISC 2004. Utrecht: STW, p. 700-703 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Open Access
File
19 Downloads (Pure)

Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation

Kolhatkar, J. S., Hoekstra, E., Salm, C., van der Wel, A. P., Klumperink, E. A. M., Schmitz, J. & Wallinga, H., Dec 2004, IEEE International Electron Devices Meeting (IEDM 2004). Piscataway, NJ, USA: IEEE, p. 759-762 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
18 Citations (Scopus)
16 Downloads (Pure)