1992 …2020

Research output per year

If you made any changes in Pure these will be visible here soon.

Research Output

Filter
Conference contribution

1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness

Kolhatkar, J. S., Salm, C. & Wallinga, H., 2001, Proceedings of the SAFE Conference. p. 92-95 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Adapting to a changing highschool population

Salm, C., Eijkel, J. C. T., van der Heijden, F. & Odijk, M., 10 May 2010, Proceedings of 8th European Workshop on Microelectronics Education, EWME 2010. Darmstadt, Germany: Technische Universitaet Darmstadt, p. 180-184 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
24 Downloads (Pure)

A miniaturized multiwire proportional chamber using CMOS wafer scale post-processing

Blanco Carballo, V. M., Chefdeville, M. A., van der Graaf, H., Salm, C., Aarnink, A. A. I., Smits, S. M., Altpeter, D. M., Timmermans, J., Timmermans, J., Visschers, J. L. & Schmitz, J., 7 Jul 2006, Proceedings of 32nd European Solid State Device Research Conference. IEEE Computer Society Press, p. 129-132 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

Kolhatkar, J., Salm, C. & Wallinga, H., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 42-45 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J. & Visschers, J. L., Nov 2005, Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands: STW, p. 139-142 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Open Access
File
51 Downloads (Pure)

An Initial study on The Reliability of Power Semiconductor Devices

Boksteen, B. K., Hueting, R. J. E., Salm, C. & Schmitz, J., 18 Nov 2010, Proceedings of STW.ICT Conference 2010. Utrecht: STW, p. 68-72 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

File
133 Downloads (Pure)

An integrated gaseous detector using microfabrication post-processing technology

Blanco Carballo, V. M., Salm, C., Smits, S. M., Schmitz, J., Chefdeville, M. A., van der Graaf, H., Timmermans, J., Timmermans, J. & Visschers, J. L., 23 Nov 2006, Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW, p. 369-372 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

An integrated single photon detector array using porous anodic alumina

Melai, J., Salm, C., Schmitz, J., Smits, S. & Visschers, J., 27 Nov 2006, Proceedings 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW, p. 389-393 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Antenna Ratio Power Law Dependence of Plasma Process-Induced Oxide Failure Fraction

Wang, Z., Salm, C., Kuper, F. G. & Scarpa, A., 29 Nov 2000, Proceedings of SAFE conference 2000. Veldhoven, The Netherlands, p. - 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

A reliability model for interlayer dielectric cracking during fast thermal cycling

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 21 Oct 2003, Advanced Metallization Conference (AMC 2003). Ray, G. W., Smy, T., Ohta, T. & Tsujimura, M. (eds.). Warrendale, PA: Materials Research Society, p. 295-299 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
5 Citations (Scopus)
93 Downloads (Pure)

A Reliability Model for interlayer dielectrics cracking during very fast thermal cycling

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 21 Oct 2003, Proceedings of Advanced Metallization Conference AMC 2003. p. -

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Charge plasma diode - a novel device concept

Rajasekharan, B., Hueting, R. J. E., Salm, C., Hoang, T. & Schmitz, J., 27 Nov 2008, Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands: STW, p. 576-579 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Charging induced damage on complex-antenna test structures

Wang, Z., Ackaert, J., Salm, C. & Kuper, F. G., 2001, Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001. Utrecht, The Netherlands: STW, p. 220-223 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

CMOS-MEMS Post Processing Compatible Capacitively Transduced GeSi Resonators

Kazmi, S. N. R., Aarnink, A. A. I., Salm, C. & Schmitz, J., 25 Jul 2012, Proceedings of 2012 IEEE International Frequency Control Symposium (IFCS). USA: IEEE Electron Devices Society, p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Comparison of C-V measurement methods for RF-MEMS capacitive switches

Wang, J., Salm, C. & Schmitz, J., 26 Mar 2013, IEEE International Conference on Microelectronic Test Structures, ICMTS 2013. USA: IEEE Electron Devices Society, p. 53-58 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

Salm, C., Klootwijk, J. H., Houtsma, V. E., Ponomarev, Y. V. & Woerlee, P. H., 26 Nov 1998, Proceedings of SAFE'98. Mierlo, p. 473-476 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Considerations on using SU-8 as a construction material for high aspect ratio structures

Melai, J., Salm, C., Smits, S. M., Blanco Carballo, V. M., Schmitz, J. & Hageluken, B., 29 Nov 2007, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands: STW, p. 529-534 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
75 Downloads (Pure)

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

Kolhatkar, J. S., Salm, C., Knitel, M. J. & Wallinga, H., 17 Oct 2005, Proceedings of the 32nd European Solid-State Device Research Conference. Kovalguine, A. (ed.). Piscataway: IEEE Computer Society, p. 83-86 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
8 Citations (Scopus)
40 Downloads (Pure)

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Wang, Z., Ackaert, J., Salm, C., de Backer, E., van den Bosch, G. & Zawalski, W., 7 Nov 2002, 9th International Symposium on Physics and Failure Analysis 2002. Piscataway, NJ: IEEE, p. 242-245 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

44 Downloads (Pure)

Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide

Ackaert, J. G. G., Wang, Z., Backer, E. & Salm, C., 6 Jun 2002, Proceedings of 7th International symposium of Plasma Process-Induced Damage. Santa Clara, California: American Vacuum Society, p. 45-48 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., Woerlee, P. H. & Hof, A. J., 3 Dec 1998, Proceedings of the SISC. San Diego, USA, p. 41-42 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Dimensional scaling effects on transport properties of p-i-n diodes

Rajasekharan, B., Salm, C., Hueting, R. J. E., Hoang, T., van der Wiel, W. G. & Schmitz, J., 29 Nov 2007, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands: STW, p. 457-459 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

Rajasekharan, B., Salm, C., Hueting, R. J. E., Hoang, T. & Schmitz, J., 13 Mar 2008, Proceedings of the 9th Conference on ULtimate Integration on Silicon. Piscataway: IEEE Computer Society Press, p. 195-198 4 p. 10.1109/ULIS.2008.4527172. (Electron Device Society; no. DTR08-9).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
13 Citations (Scopus)
70 Downloads (Pure)

Discharge Protection and Ageing of Micromegas Pixel Detectors

Aarts, A. A., Blanco Carballo, V. M., Chefdeville, M. A., Colas, P., Dunand, S., Fransen, M., van der Graaf, H., Giomataris, Y., Hartjes, F., Koffeman, G., Melai, J., Peek, H., Riegler, W., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J., Timmermans, J., Visschers, J. L. & Wyrsch, N., 29 Oct 2006, 2006 IEEE Nuclear Science Symposium Conference Record. San Diego, CA, USA: IEEE Nuclear & Plasma Sciences Society, p. 3865-3869 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Downscaling of LPCVD High Temperature Oxides: A feasibility study

Salm, C., Klootwijk, J. H., Weusthof, M. H. H. & Woerlee, P. H., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 477-480 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices

De Jong, M. J., Salm, C. & Schmitz, J., 30 Jun 2020, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. IEEE, 9129540. (IEEE International Reliability Physics Symposium Proceedings; vol. 2020-April).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Effect of thermal gradients on the electromigration lifetime in power electronics

Nguyen, H. V., Salm, C., Krabbenborg, B. H., Weide-Zaage, K., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 26 Jul 2004, 2004 IEEE International Reliability Physics Symposium proceedings: 42nd Annual : Phoenix, Arizona, April 25-29, 2004 . Piscataway, NJ: IEEE, p. 619-620 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)
10 Downloads (Pure)

Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications

Salm, C., van Veen, D. T., Holleman, J. & Woerlee, P. H., 25 Sep 1995, Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95. The Netherlands Congress Centre, The Hague, p. 131-134

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

Salm, C., Van Veen, D. T., Holleman, J. & Woerlee, P. H., 1 Jan 1995, ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. de Graaff, H. C. & van Kranenburg, H. (eds.). IEEE Computer Society, p. 131-134 4 p. 5435993

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
3 Citations (Scopus)
7 Downloads (Pure)

Electrothermomigration-induced failure in power IC metallization

Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., Nov 2003, Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003. Utrecht, The Netherlands: STW, p. 622-630 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modelling

Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J. & Kuper, F. G., 2002, Proceedings ESREF 2002. p. 1415-1420 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Fast Temperature Cycling Stress-Induced and Electromigration-Induced Interlayer Dielectric Cracking Failure in Multilevel Interconnection

Nguyen, V. H., Nguyen Van, H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., Bisschop, J. J., Mouthaan, A. J. & Kuper, F. G., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 69-74 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Fast Thermal Cycling Stress and Degredations in Multilayer Interconnects

Nguyen, V. H., Salm, C., Vroemen, J., Krabbenborg, B. H., Bisschop, J. J., Mouthaan, A. J. & Kuper, F. G., 28 Nov 2001, Proceedings of the SAFE Conference. Veldhoven, the Netherlands, p. 136-140 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Further outgassing studies on SU-8

Melai, J., Blanco Carballo, V. M., Salm, C., Wolters, R. A. M. & Schmitz, J., 27 Nov 2008, Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands: STW, p. 491-494 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Gate-Workfunction Engineering Using Poly-(Si,Ge) for High-Performance 0.18um CMOS Technology

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H., Stolk, P. A. & Gravesteijn, D. J., 1 Dec 1997, International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM Technical Digest. Piscataway, NJ: IEEE, p. 829-832 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1997).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
23 Downloads (Pure)

High-Performance Deep Submicron MOSTs With Polycrystalline-(Si,Ge) Gates

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H. & Gravesteijn, D. J., 6 Jun 1997, VLSI TSA. Taiwan, p. 311-315 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
7 Citations (Scopus)
8 Downloads (Pure)

Humidity and polarity influence on MIM PZT capacitor degradation and breakdown

Wang, J., Salm, C., Houwman, E., Schmitz, J. & Nguyen, M., 9 Oct 2016, 2016 IEEE International Integrated Reliability Workshop (IIRW). IEEE, p. 65-68 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Open Access
File
1 Citation (Scopus)
55 Downloads (Pure)

Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs

Sowariraj, M. S. B., Kuper, F. G., Salm, C., Mouthaan, A. J. & Smedes, T., 27 Nov 2002, Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: STW, p. 104-107 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Initial growth of polycrystalline Si and GeSi alloys in an RTP system

Rem, J. B., Salm, C., Klootwijk, J. H., Weusthof, M. H. H., Holleman, J. & Verweij, J. F., 17 Apr 1995, Materials Research Society Symposium Proceedings Volume 387, Rapid Thermal and Integrated Processing IV. San Francisco, Californie, U.S.A., p. 323-328

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

Kolhatkar, J. S., Hoekstra, E., Hof, A. J., Salm, C., Wallinga, H. & Schmitz, J., 25 Nov 2004, Proceedings SAFE & ProRISC 2004. Utrecht: STW, p. 700-703 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Open Access
File
19 Downloads (Pure)

Low Frequency Noise in Boron Doped Polycrystalline SiGe Thin Film Resistors

Chen, X. Y., Salm, C. & van Rheenen, A. D., 20 Dec 1998, Proceedings of IEDMS'98. Tainan, Taiwan, p. 242-243 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low-Frequency noise in hot-carrier degraded MOSFETs

Salm, C., Hoekstra, E., Kolhatkar, J. S., Hof, A. J., Wallinga, H. & Schmitz, J., 26 Jun 2006, 14th Workshop on Dielectrics in Microelectronics, WODIM 2006. Koninklijke Nederlandse Academie van Wetenschappen, p. 64-65 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low Frequency Noise in Poly-Si and Poly-SiGe gated MOSFETS

Johansen, J. A., Figenschau, H., Chen, X. Y., Salm, C. & van Rheenen, A. D., 22 Oct 2001, ICNF 2001. Grainesville, USA, p. 161-164 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low-pressure CVD of Germanium-Silicon films using silane and germane sources

Kovalgin, A. Y., Holleman, J., Salm, C. & Woerlee, P. H., 22 Oct 2000, Proceedings of the 198th Meeting of the Electrochemical Society. Phoenix, USA, p. -

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low-Pressure CVD of Germanium-Silicon Films using Silane and Germane Sources

Kovalgin, A. Y., Holleman, J., Salm, C. & Woerlee, P. H., 22 Oct 2001, Thin Film Transistor Technologies V: proceedings of the international symposium. Pennington, NJ, p. 269-275 7 p. (Proceedings; vol. 2000-31).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Low Stressed In-situ Boron doped Poly SiGe Layers for High-Q Resonators

Kazmi, S. N. R., Rangarajan, B., Aarnink, A. A. I., Salm, C. & Schmitz, J., 18 Nov 2010, Proceedings of the STW.ICT Conference 2010. Utrecht: STW, p. 109-113 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

File
88 Downloads (Pure)

Low temperature silicidation of Pd layers on crystalline silicon monitored via in situ resistance measurements

Faber, E. J., Wolters, R. A. M., Rajasekharan, B., Salm, C. & Schmitz, J., 29 Nov 2010, Advanced Metallization Conference 2009: proceedings of the conference held September 13-15, 2009, Baltimore, Maryland, U.S.A. Edelstein, D. C. & Schulz, S. E. (eds.). Materials Research Society, p. 133-140 8 p. (Materials Research Society conference proceedings; vol. 25).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
5 Citations (Scopus)
10 Downloads (Pure)

LPCVD of GeXSi1-x Films Using SiH4 and GeH4 Source Gases

Kovalgin, A. Y., Holleman, J., Salm, C., Woerlee, P. H. & Ponomarev, Y. V., 26 Nov 1998, Proceedings of the SAFE'98. Mierlo, the Netherlands, p. 311-317 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Materials selection for low temperature processed high Q resonators using ashby approach

Kazmi, S. N. R., Salm, C. & Schmitz, J., 26 Nov 2009, Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands: STW, p. 81-84 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Measurement and extraction of RTS parameters under 'Switched Biased' conditions in MOSFETS

Kolhatkar, J. S., van der Wel, A. P., Klumperink, E. A. M., Salm, C., Nauta, B. & Wallinga, H., Aug 2003, 17th International Conference on Noise and Fluctuations. BRNO , Czech Republic: Czech Noise Research Laboratory (CNRL), p. 237-240 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
68 Downloads (Pure)