1992 …2020

Research output per year

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Research Output

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2000

Metallization Issues in the IC backend

van Nieuwkasteele-Bystrova, S. N., Holleman, J., van Kranenburg, H., Kuper, F. G., Mouthaan, A. J., Nguyen Hoang, V., Nguyen, V. H., Salm, C. & Woerlee, P. H., 12 Oct 2000, Enschede, The Netherlands

Research output: Other contributionOther research output

Simulation of the reservoir effect of different lay outs in multilayer metallisation film

Nguyen, V. H., Salm, C., Kuper, F. G. & Mouthaan, A. J., 19 Dec 2000, Veldhoven, The Netherlands

Research output: Other contributionOther research output

1999

Actual Interconnect Issues and Solutions in ULSI Circuits

van Nieuwkasteele-Bystrova, S. N., Dekker, R., Holleman, J., van Kranenburg, H., Kuper, F. G., Mouthaan, A. J., Nguyen Hoang, V., Petrescu, V., Rijnsburger, M., Salm, C. & Woerlee, P. H., 14 Oct 1999, Enschede, The Netherlands

Research output: Other contributionOther research output

Grouwth and properties of IC dielectrics

Kovalgin, A. Y., Isai, I. G., Wang, Z., Houtsma, V. E., Holleman, J., Dekker, R., Salm, C., Woerlee, P. H. & Mouthaan, A. J., 14 Oct 1999, Enschede, The Netherlands

Research output: Other contributionOther research output

1998

Gate oxide reliability for deep submicron PMOS Si and GeSi gate technologies

Salm, C., Klootwijk, J. H., Ponomarev, Y. V., Boos, P. W. M. & Gravesteijn, D. J., 23 Jun 1998, Enschede, the Netherlands

Research output: Other contributionOther research output

Gate Oxide Reliabily for Deep Submicron PMOS Si and GeSi Gate Technologies

Salm, C., Klootwijk, J. H., Ponomarev, Y. V., Boos, P. W. M., Gravesteijn, D. J. & Woerlee, P. H., 26 Nov 1998, Mierlo, the Netherlands

Research output: Other contributionOther research output

How to Solve the Main Reliability Problem in Future IC Devices: Modeling the Stress and Electromigration

Dekker, M., Petrescu, V., Rijnsburger, M., Salm, C. & Mouthaan, A. J., 23 Jun 1998, Enschede, the Netherlands

Research output: Other contributionOther research output

LPCVD of GexSi1-x films using SiH4 and GeH4 source gases

Kovalgin, A. Y., Holleman, J., Salm, C., Woerlee, P. H. & Ponomarev, Y. V., 26 Jun 1998, Enschede, the Netherlands

Research output: Other contributionOther research output

Stress-Induced Leakage Current in p+ Poly MOS Capacitors

Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P. & Woerlee, P. H., 15 Dec 1998, Veldhoven, the Netherlands

Research output: Other contributionOther research output

1997

Teleleren: het vakgebied halfgeleider devices naar de student toegebracht

Hovius, J. & Salm, C., 28 Nov 1997, University of Twente, Enschede, the Netherlands

Research output: Other contributionOther research output

1996

1/f noise in polycrystalline GeSi

Salm, C., Chen, X. Y., Hamaeme, E. H. & Hooge, F. N., 5 Jun 1996, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

Realisation of a 0.25 um NMOS with a GeSi gate

Salm, C., Schmitz, J., Martens, M. C. & Woerlee, P. H., 5 Jun 1996, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

1995

Germanium-Silicon, the future gate material for sub 0.25 um MOSFETs 1. About the material properties

Salm, C., van Veen, D. T., Schmitz, J. & Woerlee, P. H., 20 Dec 1995, Veldhoven

Research output: Other contributionOther research output

Germanium-Silicon, the future gate material for sub 0.25 um MOSFETs 2. About the device properties

Salm, C., van Veen, D. T., Schmitz, J. & Woerlee, P. H., 20 Dec 1995, Veldhoven

Research output: Other contributionOther research output

Hall and resistivity measurements on poly-Ge0.3Si0.7 and poly-Si

van Veen, D. T., Salm, C., Holleman, J. & Woerlee, P. H., 14 Jun 1995, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output

Hall mobility and resistivity of p-type doped polycrystalline GeSi and Si

Salm, C., van Veen, D. T., Holleman, J. & Woerlee, P. H., 1 May 1995, Veldhoven

Research output: Other contributionOther research output

RTMP study of the nucleation of polycrystalline Si and GexSi1-x alloys

Rem, J. B., Salm, C., Klootwijk, J. H. & Weusthof, M. H. H., 3 Jul 1995, Acquafredda di Maratea, Italy

Research output: Other contributionOther research output

RTP annealing of SiO2 layers for non volatile memory application

Klootwijk, J. H., Salm, C., Rem, J. B., van Kranenburg, H., Woerlee, P. H. & Wallinga, H., 3 Jul 1995, Acquafredda di Maratea, Italy

Research output: Other contributionOther research output

Selective growth of GexSi1-x for elevated source and drain in deep submicron MOS

Salm, C. & Woerlee, P. H., 14 Jun 1995, Best Western Dish Hotel, Enschede

Research output: Other contributionOther research output