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Fingerprint Dive into the research topics where Gaurav Gupta is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 16 Similar Profiles
Diodes Engineering & Materials Science
Molybdenum oxide Engineering & Materials Science
Inversion layers Engineering & Materials Science
Silicon Engineering & Materials Science
Semiconductor devices Engineering & Materials Science
electroluminescence Physics & Astronomy
Palladium Engineering & Materials Science
heterojunctions Physics & Astronomy

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Research Output 2017 2019

  • 3 Article
  • 1 Conference contribution
1 Downloads (Pure)

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gupta, G., Tharnmaiah, S. D., Hueting, R. J. E. & Nanver, L. K., 6 Jun 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, p. 12-17 6 p. 8730920

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Molybdenum oxide
Inversion layers
2 Citations (Scopus)
132 Downloads (Pure)

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Gupta, G., Banerjee, S., Dutta, S., Aarnink, A. A. I., Schmitz, J., Kovalgin, A. Y. & Hueting, R. J. E., 28 Aug 2018, In : Journal of applied physics. 124, 8, 8 p., 084503.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
charge carriers
1 Citation (Scopus)
1 Downloads (Pure)

Minority Carrier Injection in High-Barrier Si-Schottky Diodes

Gupta, G., Dutta, S., Banerjee, S. & Hueting, R. J. E., 1 Apr 2018, In : IEEE transactions on electron devices. 65, 4, p. 1276-1282 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Thermionic emission
Schottky barrier diodes
Carrier transport
25 Citations (Scopus)
1 Downloads (Pure)

Electrostatic Doping in Semiconductor Devices

Gupta, G., Rajasekharan, B. & Hueting, R. J. E., 23 Jun 2017, In : IEEE transactions on electron devices. 64, 8, p. 3044-3055 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

Semiconductor devices
Doping (additives)
Energy gap