1991 …2020

Research output per year

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Research Output

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Conference contribution
1999

A 0.13um CMOS technology for low-voltage analogue applications

Ponomarev, Y. V., Stolk, P. A., van Brandenburg, A., Dachs, C. J. J., Kaiser, M., Montree, A. H., Roes, R., Schmitz, J. & Woerlee, P. H., 1 Jan 1999, ESSDERC 1999: Proceedings of the 29th European solid-state device research conference, Leuven, Belgium, 13-15 september. Mertens, R. P., Grünbacher, H., Maes, H. E. & Declerck, G. (eds.). Piscataway, NJ: IEEE Computer Society, p. 180-183 4 p. 1505469

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

An efficient lateral channel profiling of poly-SiGe-gated PMOSFET's for 0.1 μm CMOS low-voltage applications

Ponomarev, Y. V., Stolk, P. A., van Brandenburg, A. C. M. C., Dachs, C. J. J., Kaiser, M., Montree, A. H., Roes, R., Schmitz, J. & Woerlee, P. H., 14 Jun 1999, 1999 Symposium on VLSI Technology: digest of technical papers : June 14-16, 1999, Kyoto. Piscataway, NJ: IEEE, p. 65-66 2 p. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Channel formation for 0.15 μm CMOS using through-the-gate implantation

Montree, A. H., Ponomarev, Y. V., Baks, W. M., van Brandenburg, A. C. M. C., Dachs, C., Roes, R. F. M., Schmitz, J., Stolk, P. A. & Tuinhout, H. P., 10 Jun 1999, 1999 International Symposium on VLSI Technology, Systems, and Applications: proceedings of technical papers, June 8-10, 1999, Taipei International Convention Center, Taipei, Taiwan, R.O.C. Piscataway, NJ: IEEE, p. 10-13 4 p. (International Symposium on VLSI Technology, Systems, and Applications: Proceedings; vol. 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
2 Citations (Scopus)
1 Downloads (Pure)

Characterization of low energy boron implants and electrical results of submicron PMOS transistors

Collart, E. J. H., Murrell, A. J., De Cock, G., Foad, M. A., Schmitz, J., van Zijl, J. P. & van Berkum, J. G. M., 1 Dec 1999, Ion implantation technology-98: 1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998. Matsuo, J., Takaoka, G. & Yamada, I. (eds.). IEEE Canada, Vol. 2. p. 905-908 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
3 Downloads (Pure)

Gate polysilicon optimization for deep-submicron MOSFETs

Schmitz, J., Tuinhout, H. P., Montree, A. H., Ponomarev, Y. V., Stolk, P. A. & Woerlee, P. H., 1 Jan 1999, ESSDERC '99: proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium, 13-15 September, 1999. Mertens, R. P., Grünbacher, H., Maes, H. E. & Declerck, G. (eds.). Piscataway, NJ: IEEE Computer Society, p. 156-159 4 p. 1505463

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
5 Citations (Scopus)
9 Downloads (Pure)

Minority carrier tunneling and stress-induced leakage current for p+ gate MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

Houtsma, V. E., Holleman, J., Salm, C., de Haan, I. R., Schmitz, J., Widdershoven, F. P. & Woerlee, P. H., Dec 1999, International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. Piscataway, NJ: IEEE, p. 457-460 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
6 Citations (Scopus)
12 Downloads (Pure)

The effect of thin oxide layers on shallow junction formation

Stolk, P. A., Schmitz, J., Cubaynes, F. N., Van Brandenburg, A. C. M. C., van Berkum, J. G. M., van de Wijgert, W. G. & Roozeboom, F., 1 Jan 1999, ESSDERC '99: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999. Maes, H. E., Mertens, R. P., Declerck, G. & Grünbacher, H. (eds.). Piscataway, NJ: IEEE Computer Society, p. 428-431 4 p. 1505531

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
2 Downloads (Pure)
1998

Channel profile engineering of 0.1 μm-Si MOSFETs by through-the-gate implantation

Ponomarev, Y. V., Stolk, P. A., van Brandenburg, A. C. M. C., Roes, R., Montree, A. H., Schmitz, J. & Woerlee, P. H., 1 Dec 1998, International Electron Devices Meeting 1998 : San Francisco, CA, December 6-9, 1998, IEDM technical digest. IEEE, p. 635-638 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1998).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
20 Citations (Scopus)
10 Downloads (Pure)

High performance 0.13um CMOS with classical architecture

Schmitz, J., van Brandenburg, A. C. M. C., Collart, E. J. H., Huijten, L. H. M., Montree, A. H., Ponomarev, Y. V., Roes, R. F. M., Scholten, A. J. & Woerlee, P. H., 1 Jan 1998, ESSDERC 1998: Proceedings of the 28th European Solid-State Device Research Conference. Touboul, A., Danto, Y. & Grünbacher, H. (eds.). Piscataway, NJ: IEEE Computer Society, p. 156-159 4 p. 1503512

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
2 Downloads (Pure)

Ultra-shallow junction formation by outdiffusion from implanted oxide

Schmitz, J., van Gestel, M., Stolk, P. A., Ponomarev, Y. V., Roozeboom, F., van Berkum, J. G. M., Zalm, P. C. & Woerlee, P. H., 1 Dec 1998, International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998: IEDM technical digest. Piscataway, NJ: IEEE, p. 1009-1012 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1998).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
6 Citations (Scopus)
1 Downloads (Pure)
1997

Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

Tuinhout, H. P., Montree, A. H., Schmitz, J. & Stolk, P. A., 1 Dec 1997, International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM technical digest. Piscataway, NJ: IEEE, p. 631-634 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1997).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
66 Citations (Scopus)
7 Downloads (Pure)

Gate-Workfunction Engineering Using Poly-(Si,Ge) for High-Performance 0.18um CMOS Technology

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H., Stolk, P. A. & Gravesteijn, D. J., 1 Dec 1997, International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM Technical Digest. Piscataway, NJ: IEEE, p. 829-832 4 p. (International Electron Devices Meeting, IEDM Technical Digest; vol. 1997).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
22 Downloads (Pure)

High-Performance Deep Submicron MOSTs With Polycrystalline-(Si,Ge) Gates

Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P. H. & Gravesteijn, D. J., 6 Jun 1997, VLSI TSA. Taiwan, p. 311-315 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
7 Citations (Scopus)
8 Downloads (Pure)

Study of pocket implant parameters for 0,18 um CMOS

Schmitz, J., Ponomarev, Y. V., Montree, A. H. & Woerlee, P. H., 1 Jan 1997, ESSDERC'97: proceedings of the 27th European Solid-State Device Research Conference : Stuttgart, Germany, 22-24 September 1997. Grunbacher, H. (ed.). Piscataway, NJ: IEEE Computer Society, p. 224-227 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
1 Citation (Scopus)
11 Downloads (Pure)
1996

Design and characterisation of high-performance 0.13 μm NMOS Devices

Schmitz, J., Paulzen, G. M., Gravesteijn, D. J., Montree, A. H. & Woerlee, P. H., 1 Jan 1996, ESSDERC 1996: Proceedings of the 26th European Solid State Device Research Conference. Rudan, M. & Baccarani, G. (eds.). Piscataway, NJ: IEEE Computer Society, p. 329-332 4 p. 5437045

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
4 Downloads (Pure)

Realisation of a 0.25 um NMOSFET using GexSi1-x (x

Salm, C., Schmitz, J., Martens, M. C., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 9 Sep 1996, Proceedings of the 26th European Solid State Device Research Conference (ESSDERC'96). Bologna, Italy, p. 601-604

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

File
4 Downloads (Pure)

Realisation of a 0.25 μm NMOSFET using GexSi1-x(x≪0.4) as Gate Material

Salm, C., Schmitz, J., Martens, M. C., Gravesteijn, D. J., Holleman, J. & Woerlee, P. H., 1 Jan 1996, ESSDERC 1996: Proceedings of the 26th European Solid State Device Research Conference. Rudan, M. & Baccarani, G. (eds.). Piscataway, NJ: IEEE Computer Society, p. 601-604 4 p. 5436139

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
1 Citation (Scopus)
9 Downloads (Pure)