1980 …2019
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Fingerprint Dive into the research topics where Lis Karen Nanver is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 6 Similar Profiles
Silicon Engineering & Materials Science
Boron Engineering & Materials Science
Diodes Engineering & Materials Science
Photodiodes Engineering & Materials Science
Chemical vapor deposition Engineering & Materials Science
Doping (additives) Engineering & Materials Science
Avalanche diodes Engineering & Materials Science
Bipolar transistors Engineering & Materials Science

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Research Output 1980 2019

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Kneževic, T., Suligoj, T. & Nanver, L. K., 1 May 2019, 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. Skala, K., Car, Z., Pale, P., Huljenic, D., Janjic, M., Koricic, M., Sruk, V., Ribaric, S., Grbac, T. G., Butkovic, Z., Cicin-Sain, M., Skvorc, D., Mauher, M., Babic, S., Gros, S., Vrdoljak, B. & Tijan, E. (eds.). IEEE, p. 24-29 6 p. 8757156. (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO); vol. 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Boron
Electron injection
Diodes
Current density
Electron affinity

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gupta, G., Tharnmaiah, S. D., Hueting, R. J. E. & Nanver, L. K., 6 Jun 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, p. 12-17 6 p. 8730920

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Molybdenum oxide
Inversion layers
Palladium
Diodes
Silicon
2 Citations (Scopus)

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Knezevic, T., Liu, X., Hardeveld, E., Suligoj, T. & Nanver, L. K., 1 Jun 2019, In : IEEE electron device letters. 40, 6, p. 858-861 4 p., 8686173.

Research output: Contribution to journalArticleAcademicpeer-review

Electron injection
Boron
Diodes
Metals
Monolayers
13 Downloads (Pure)

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Knežević, T., Nanver, L. K. & Suligoj, T., 26 Feb 2019, Physics and Simulation of Optoelectronic Devices XXVII. Osinski, M., Witzigmann, B. & Arakawa, Y. (eds.). SPIE, 109120Y. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10912).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
Avalanche diodes
Single Photon Avalanche Diode
environment simulation
avalanche diodes
Simulation Environment

Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes

Thammaiah, S. D., Hansen, J. L. & Nanver, L. K., 1 Mar 2019, China Semiconductor Technology International Conference 2019, CSTIC 2019. Claeys, C., Huang, R., Wu, H., Lin, Q., Liang, S., Song, P., Guo, Z., Lai, K., Yu, W., Zhang, Y., Qu, X. & Lung, H-L. (eds.). Piscataway, NJ: IEEE, 8755633

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Diffusion barriers
Molecular beam epitaxy
Diodes
molecular beam epitaxy
Metals

Activities 2018 2018

  • 1 Oral presentation

Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon

Lis Karen Nanver (Speaker), Xingyu Liu (Contributor), Tihomir Knežević (Contributor)
20 Mar 2018

Activity: Talk or presentationOral presentation