1980 …2019
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Fingerprint Dive into the research topics where Lis Karen Nanver is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 4 Similar Profiles
Silicon Engineering & Materials Science
Boron Engineering & Materials Science
Diodes Engineering & Materials Science
Photodiodes Engineering & Materials Science
Chemical vapor deposition Engineering & Materials Science
Doping (additives) Engineering & Materials Science
Avalanche diodes Engineering & Materials Science
Bipolar transistors Engineering & Materials Science

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Research Output 1980 2019

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gupta, G., Tharnmaiah, S. D., Hueting, R. J. E. & Nanver, L. K., 6 Jun 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, p. 12-17 6 p. 8730920

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Molybdenum oxide
Inversion layers
Palladium
Diodes
Silicon

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Knezevic, T., Liu, X., Hardeveld, E., Suligoj, T. & Nanver, L. K., 1 Jun 2019, In : IEEE electron device letters. 40, 6, p. 858-861 4 p., 8686173.

Research output: Contribution to journalArticleAcademicpeer-review

Electron injection
Boron
Diodes
Metals
Monolayers
1 Downloads (Pure)

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Knežević, T., Nanver, L. K. & Suligoj, T., 26 Feb 2019, Physics and Simulation of Optoelectronic Devices XXVII. Osinski, M., Witzigmann, B. & Arakawa, Y. (eds.). SPIE, 109120Y. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10912).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
Avalanche diodes
Single Photon Avalanche Diode
environment simulation
avalanche diodes
Simulation Environment
2 Citations (Scopus)
1 Downloads (Pure)

2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

Knežević, T., Nanver, L. K. & Suligoj, T., 23 Feb 2018, Physics and Simulation of Optoelectronic Devices XXVI: SPIE OPTO, 27 January - 1 February 2018, San Francisco, California, United States. Witzigmann, B., Osiński, M. & Arakawa, Y. (eds.). Bellingham, WA: SPIE, 10 p. 105261K. (Proceedings of SPIE; vol. 10526).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

avalanche diodes
photons
ionization
electric fields
rings
1 Citation (Scopus)
1 Downloads (Pure)

An experimental view on PureB silicon photodiode device physics

Nanver, L. K., 28 Jun 2018, 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Photodiodes
Boron
Physics
Silicon
Diodes

Activities 2018 2018

  • 1 Oral presentation

Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon

Lis Karen Nanver (Speaker), Xingyu Liu (Contributor), Tihomir Knežević (Contributor)
20 Mar 2018

Activity: Talk or presentationOral presentation