1980 …2019

Research output per year

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Research Output

1.9 nm wide ultra-high aspect-ratio bulk-si FinFETs

Jovanović, V., Poljak, M., Suligoj, T., Civale, Y. & Nanver, L. K., 11 Dec 2009, 67th Device Research Conference, DRC 2009. p. 261-262 2 p. 5354923. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

Knežević, T., Nanver, L. K. & Suligoj, T., 23 Feb 2018, Physics and Simulation of Optoelectronic Devices XXVI: SPIE OPTO, 27 January - 1 February 2018, San Francisco, California, United States. Witzigmann, B., Osiński, M. & Arakawa, Y. (eds.). Bellingham, WA: SPIE, 10 p. 105261K. (Proceedings of SPIE; vol. 10526).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
1 Downloads (Pure)

50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes

Gentile, G., Buisman, K., Akhoukh, A., De Vreede, L. C. N., Rejaei, B. & Nanver, L. K., 24 Sep 2008, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers. p. 199-202 4 p. 4446290

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

Sammak, A., Aminian, M., Qi, L., Charbon, E. & Nanver, L. K., 1 Jan 2014, Optical Sensing and Detection III. SPIE, 914104. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 9141).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
2 Citations (Scopus)
5 Downloads (Pure)

A 67 dBm OIP3 multistacked junction varactor

Huang, C., Buisman, K., Nanver, L. K., Sarubbi, F., Popadić, M., Scholtes, T. L. M., Schellevis, H., Larson, L. E. & De Vreede, L. C. N., 1 Nov 2008, In : IEEE microwave and wireless components letters. 18, 11, p. 749-751 3 p., 4666741.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

A back-wafer contacted silicon-on-glass integrated bipolar process - Part I: The conflict electrical versus thermal isolation

Nanver, L. K., Nenadović, N., D'Alessandro, V., Schellevis, H., Van Zeijl, H. W., Dekker, R., De Mooij, D. B., Zieren, V. & Slotboom, J. W., 1 Jan 2004, In : IEEE transactions on electron devices. 51, 1, p. 42-50 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

59 Citations (Scopus)

A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown

Nenadović, N., D'Alessandro, V., Nanver, L. K., Tamigi, F., Rinaldi, N. & Slotboom, J. W., 1 Jan 2004, In : IEEE transactions on electron devices. 51, 1, p. 51-62 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

60 Citations (Scopus)

Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

Civale, Y., Nanver, L. K., Alberici, S. G., Gammon, A. & Kelly, I., 22 Feb 2008, In : Electrochemical and solid-state letters. 11, 4, p. H74-H76

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Sammak, A., Aminian, M., Qi, L., De Boer, W. B., Charbon, E. & Nanver, L. K., 1 Dec 2011, 2011 International Electron Devices Meeting, IEDM 2011. 6131515

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks

Neo, W. C. E., Lin, Y., Liu, X. D., De Vreede, L. C. N., Larson, L. E., Spirito, M., Pelk, M. J., Buisman, K., Akhnoukh, A., De Graauw, A. & Nanver, L. K., 1 Sep 2006, In : IEEE journal of solid-state circuits. 41, 9, p. 2166-2176 11 p., 1683908.

Research output: Contribution to journalArticleAcademicpeer-review

150 Citations (Scopus)

A Ge-on-Si single photon avalanche diode operating in Geiger mode at Infrared wavelengths

Aminian, M., Sammak, A., Qi, L., Nanver, L. K. & Charbon, E., 1 Dec 2012, Advanced Photon Counting Techniques VI. 83750Q. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8375).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
4 Citations (Scopus)
20 Downloads (Pure)

Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions

Ren, Q. W., Nanver, L. K., Visser, C. C. G. & Slotboom, J. W., 1 Apr 2001, In : Journal of Materials Science: Materials in Electronics. 12, 4-6, p. 313-316 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Al-mediated solid-phase epitaxy of silicon-on-insulator

Šakić, A., Civale, Y., Nanver, L. K., Biasotto, C. & Jovanović, V., 24 Dec 2010, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010. p. 427-432 6 p. (Materials Research Society Symposium Proceedings; vol. 1245).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon

Evseev, S. B., Nanver, L. K. & Milosavljević, S., 1 Jan 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013. IEEE, 6798148

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

A low-cost BiCMOS process with metal gates

Van Zeijl, H. W. & Nanver, L. K., 1 Jan 2001, In : Materials Research Society Symposium - Proceedings. 611

Research output: Contribution to journalConference articleAcademicpeer-review

A low-loss compact linear varactor based phase-shifter

Qureshi, J. H., Kim, S., Buisman, K., Huang, C., Pelk, M. J., Akhnoukh, A., Larson, L. E., Nanver, L. K. & De Vreede, L. C. N., 2 Oct 2007, Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007. p. 453-456 4 p. 4266470

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Sakic, A., Qi, L., Scholtes, T. L. M., Van Der Cingel, J. & Nanver, L. K., 1 Jun 2013, In : Solid-state electronics. 84, p. 65-73 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Aluminum nitride for heatspreading in RF IC's

La Spina, L., Iborra, E., Schellevis, H., Clement, M., Olivares, J. & Nanver, L. K., 9 May 2008, In : Solid-state electronics. 52, 9, p. 1359-1363 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

28 Citations (Scopus)

Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

La Spina, L., Marano, I., d'Alessandro, V., Schellevis, H. & Nanver, L. K., 20 May 2008, EuroSimE 2008: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems. IEEE Computer Society, 4525061

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

A monolithic low-distortion low-loss silicon-on-glass varactor-tuned filter with optimized biasing

Buisman, K., De Vreede, L. C. N., Larson, L. E., Spirito, M., Akhnoukh, A., Lin, Y., Liu, X. D. & Nanver, L. K., 1 Jan 2007, In : IEEE microwave and wireless components letters. 17, 1, p. 58-60 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Evseev, S. B., Nanver, L. K., Rejaei, B. & Milosavljević, S., 1 Aug 2014, In : Microelectronic engineering. 125, p. 2-7 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Analysis of electrothermal effects in bipolar current mirrors

D'Alessandro, V., Nanver, L. K., Zampardi, P. J. & Rinaldi, N., 1 Dec 2007, Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. p. 127-130 4 p. 4351852

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Analysis of electrothermal effects in bipolar differential pairs

D'Alessandro, V., La Spina, L., Nanver, L. K. & Rinaldi, N., 1 Apr 2011, In : IEEE transactions on electron devices. 58, 4, p. 966-978 13 p., 5725176.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Analysis of the bipolar current mirror including electrothermal and avalanche effects

Rinaldi, N., d'Alessandro, V. & Nanver, L. K., 20 May 2009, In : IEEE transactions on electron devices. 56, 6, p. 1309-1321 13 p.

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

Van Den Oever, L. C. M., Nanver, L. K. & Slotboom, J. W., 1 Jan 2000, 30th European Solid-State Device Research Conference. Grunbacher, H., Crean, G. M., Lane, W. A. & McCabe, F. A. (eds.). IEEE Computer Society Press, p. 568-571 4 p. 1503771

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Analytical carrier transport model for arbitrarily shallow p-n junctions

Popadić, M., Lorito, G. & Nanver, L. K., 19 Sep 2008, 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008. IEEE, p. 155-158 4 p. 4559246

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Analytical formulation and electrical measurements of self-heating in silicon BJT's

Nenadović, N., D'Alessandro, V., Nanver, L. K., Rinaldi, N., Schellevis, H. & Slotboom, J. W., 1 Jan 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. p. 24-27 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

Popadiç, M., Lorito, G. & Nanver, L. K., 19 Dec 2008, In : IEEE transactions on electron devices. 56, 1, p. 116-125 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 1 Dec 2012, In : Journal of Applied Physics. 112, 11, 113501.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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18 Citations (Scopus)
13 Downloads (Pure)

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

Cuoco, V., Neo, W. C. E., De Vreede, L. C. N., De Graaff, H. C., Nanver, L. K., Buisman, K., Wu, H. C., Jos, H. F. F. & Burghartz, J. N., 1 Dec 2004, Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004. p. 148-151 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

An experimental view on PureB silicon photodiode device physics

Nanver, L. K., 28 Jun 2018, 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
2 Downloads (Pure)

Annealing experiments on supercritical Si1-x Gex layers grown by RPCVD

Grimm, K., Vescan, L., Visser, C. C. G., Nanver, L. K. & Lüth, H., 19 Jan 2000, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 69-70, p. 261-265 5 p.

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)

A novel SPICE macromodel of BJTs including the temperature dependence of high-injection effects

D'Alessandro, V., Nenadović, N., Tamigi, F., Rinaldi, N., Nanver, L. K. & Slotboom, J. W., 19 Jul 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716). p. 253-256 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

A novel vertical DMOS transistor in SOA technology for RF-power applications

Nenadović, N., Cuoco, V., Theeuwen, S. J. C. H., Nanver, L. K., Jos, H. F. F. & Slotboom, J. W., 1 Jan 2002, 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. IEEE Computer Society Press, Vol. 1. p. 159-162 4 p. 1003164

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Application of laser annealing in the EU FP6 project D-DotFET

Nanver, L. K., Jovanović, V., Biasotto, C., Van Der Cingel, J. & Milosavljević, S., 1 Dec 2009, 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 5373443

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Applications of PureB and PureGaB ultrashallow junction technologies

Nanver, L. K., Sammak, A., Sakic, A., Mohammadi, V., Derakhshandeh, J., Mok, K. R. C., Qi, L., Golshani, N., Scholtes, T. M. L. & De Boer, W. B., 1 Dec 2012, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 6467697

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

Lorito, G., Qi, L. & Nanver, L., 1 Dec 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 972-974 3 p. 5667505

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Sakic, A., Scholtes, T. L. M., De Boer, W., Golshani, N., Derakhshandeh, J. & Nanver, L. K., 1 Dec 2011, In : Materials. 4, 12, p. 2092-2107 16 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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5 Citations (Scopus)
6 Downloads (Pure)

Arsenic-spike epilayer technology applied to bipolar transistors

Van Noort, W. D., Nanver, L. K. & Slotboom, J. W., 1 Nov 2001, In : IEEE transactions on electron devices. 48, 11, p. 2500-2505 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M. & Nanver, L. K., 1 Jan 2013, Thermal and Plasma CVD of Nanostructures and Their Applications. 31 ed. The Electrochemical Society Inc., p. 57-65 9 p. (ECS Transactions; vol. 45, no. 31).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C

Knežević, T., Suligoj, T., Liu, X., Nanver, L. K., Elsayed, A., Dick, J. F. & Schulze, J., 1 Sep 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC). IEEE, p. 242-245 4 p. 8901810. (European Solid-State Device Research Conference; vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Downloads (Pure)

Backwafer optical lithography and wafer distortion in substrate transfer technologies

van Zeijl, H. W., Slabbekoorn, J., Nanver, L. K., van Dijk, P. W. L., Berthold, A. & Machielsen, T., 18 Aug 2000, In : Proceedings of SPIE - the international society for optical engineering. 4181, 1, p. 200-207 8 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Open Access
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8 Citations (Scopus)
7 Downloads (Pure)

Base-contact proximity effects in bipolar transistors with nitride-spacer technology

van Zeijl, H. & Nanver, L. K., 1 Dec 2005, Proceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005. IEEE, p. 461-464 4 p. 1546684

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Bipolar integrated Kelvin test structure for contact resistance measurement of self-aligned implantations

Nanver, L. K., Goudena, E. J. G. & Slabbekoorn, J., Aug 1996, In : IEEE Transactions on Semiconductor Manufacturing. 9, 3, p. 455-460 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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4 Citations (Scopus)
6 Downloads (Pure)

Boron-doped silicon surfaces from B2H6 passivated by ALD Al2O3 for solar cells

Mok, K. R. C. C., van de Loo, B. W. H., Vlooswijk, A. H. G., Kessels, W. M. M. E. & Nanver, L. K., 1 Sep 2015, In : IEEE journal of photovoltaics. 5, 5, p. 1310-1318 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
1 Downloads (Pure)

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Šakić, A., Nanver, L. K., Scholtes, T. L. M., Heerkens, C. T. H., Knežević, T., Veen, G. V., Kooijman, K. & Vogelsang, P., 1 Nov 2011, In : Solid-state electronics. 65-66, 1, p. 38-44 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Bulk-micromachined test structure for fast and reliable determination of the lateral thermal conductivity of thin films

La Spina, L., van Herwaarden, A. W., Schellevis, H., Wien, W. H. A., Nenadović, N. & Nanver, L. K., 1 Jun 2007, In : Journal of microelectromechanical systems. 16, 3, p. 675-683 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

20 Citations (Scopus)

Bulk-Si FinFET technology for ultra-high aspect-ratio devices

Jovanovic, V., Nanver, L. K., Suligoj, T. & Poljak, M., 1 Dec 2009, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. p. 241-244 4 p. 5331554

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

van Zeijl, H. W. & Nanver, L. K., 1 Dec 1998, 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings. p. 98-101 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Characteristics of Separated-Gate JFETs

Nanver, L. K. & Goudena, E. J. G., 1 Jan 1986, In : Electronics letters. 22, 23, p. 1244-1246 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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3 Citations (Scopus)
4 Downloads (Pure)