1980 …2019

Research output per year

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Research Output

Article

A 67 dBm OIP3 multistacked junction varactor

Huang, C., Buisman, K., Nanver, L. K., Sarubbi, F., Popadić, M., Scholtes, T. L. M., Schellevis, H., Larson, L. E. & De Vreede, L. C. N., 1 Nov 2008, In : IEEE microwave and wireless components letters. 18, 11, p. 749-751 3 p., 4666741.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

A back-wafer contacted silicon-on-glass integrated bipolar process - Part I: The conflict electrical versus thermal isolation

Nanver, L. K., Nenadović, N., D'Alessandro, V., Schellevis, H., Van Zeijl, H. W., Dekker, R., De Mooij, D. B., Zieren, V. & Slotboom, J. W., 1 Jan 2004, In : IEEE transactions on electron devices. 51, 1, p. 42-50 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

59 Citations (Scopus)

A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown

Nenadović, N., D'Alessandro, V., Nanver, L. K., Tamigi, F., Rinaldi, N. & Slotboom, J. W., 1 Jan 2004, In : IEEE transactions on electron devices. 51, 1, p. 51-62 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

60 Citations (Scopus)

Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

Civale, Y., Nanver, L. K., Alberici, S. G., Gammon, A. & Kelly, I., 22 Feb 2008, In : Electrochemical and solid-state letters. 11, 4, p. H74-H76

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks

Neo, W. C. E., Lin, Y., Liu, X. D., De Vreede, L. C. N., Larson, L. E., Spirito, M., Pelk, M. J., Buisman, K., Akhnoukh, A., De Graauw, A. & Nanver, L. K., 1 Sep 2006, In : IEEE journal of solid-state circuits. 41, 9, p. 2166-2176 11 p., 1683908.

Research output: Contribution to journalArticleAcademicpeer-review

150 Citations (Scopus)

Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions

Ren, Q. W., Nanver, L. K., Visser, C. C. G. & Slotboom, J. W., 1 Apr 2001, In : Journal of Materials Science: Materials in Electronics. 12, 4-6, p. 313-316 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Sakic, A., Qi, L., Scholtes, T. L. M., Van Der Cingel, J. & Nanver, L. K., 1 Jun 2013, In : Solid-state electronics. 84, p. 65-73 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Aluminum nitride for heatspreading in RF IC's

La Spina, L., Iborra, E., Schellevis, H., Clement, M., Olivares, J. & Nanver, L. K., 9 May 2008, In : Solid-state electronics. 52, 9, p. 1359-1363 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

28 Citations (Scopus)

A monolithic low-distortion low-loss silicon-on-glass varactor-tuned filter with optimized biasing

Buisman, K., De Vreede, L. C. N., Larson, L. E., Spirito, M., Akhnoukh, A., Lin, Y., Liu, X. D. & Nanver, L. K., 1 Jan 2007, In : IEEE microwave and wireless components letters. 17, 1, p. 58-60 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Evseev, S. B., Nanver, L. K., Rejaei, B. & Milosavljević, S., 1 Aug 2014, In : Microelectronic engineering. 125, p. 2-7 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Analysis of electrothermal effects in bipolar differential pairs

D'Alessandro, V., La Spina, L., Nanver, L. K. & Rinaldi, N., 1 Apr 2011, In : IEEE transactions on electron devices. 58, 4, p. 966-978 13 p., 5725176.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Analysis of the bipolar current mirror including electrothermal and avalanche effects

Rinaldi, N., d'Alessandro, V. & Nanver, L. K., 20 May 2009, In : IEEE transactions on electron devices. 56, 6, p. 1309-1321 13 p.

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

Popadiç, M., Lorito, G. & Nanver, L. K., 19 Dec 2008, In : IEEE transactions on electron devices. 56, 1, p. 116-125 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 1 Dec 2012, In : Journal of Applied Physics. 112, 11, 113501.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
18 Citations (Scopus)
13 Downloads (Pure)

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Sakic, A., Scholtes, T. L. M., De Boer, W., Golshani, N., Derakhshandeh, J. & Nanver, L. K., 1 Dec 2011, In : Materials. 4, 12, p. 2092-2107 16 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
5 Citations (Scopus)
6 Downloads (Pure)

Arsenic-spike epilayer technology applied to bipolar transistors

Van Noort, W. D., Nanver, L. K. & Slotboom, J. W., 1 Nov 2001, In : IEEE transactions on electron devices. 48, 11, p. 2500-2505 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Bipolar integrated Kelvin test structure for contact resistance measurement of self-aligned implantations

Nanver, L. K., Goudena, E. J. G. & Slabbekoorn, J., Aug 1996, In : IEEE Transactions on Semiconductor Manufacturing. 9, 3, p. 455-460 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
4 Citations (Scopus)
6 Downloads (Pure)

Boron-doped silicon surfaces from B2H6 passivated by ALD Al2O3 for solar cells

Mok, K. R. C. C., van de Loo, B. W. H., Vlooswijk, A. H. G., Kessels, W. M. M. E. & Nanver, L. K., 1 Sep 2015, In : IEEE journal of photovoltaics. 5, 5, p. 1310-1318 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
1 Downloads (Pure)

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Šakić, A., Nanver, L. K., Scholtes, T. L. M., Heerkens, C. T. H., Knežević, T., Veen, G. V., Kooijman, K. & Vogelsang, P., 1 Nov 2011, In : Solid-state electronics. 65-66, 1, p. 38-44 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Bulk-micromachined test structure for fast and reliable determination of the lateral thermal conductivity of thin films

La Spina, L., van Herwaarden, A. W., Schellevis, H., Wien, W. H. A., Nenadović, N. & Nanver, L. K., 1 Jun 2007, In : Journal of microelectromechanical systems. 16, 3, p. 675-683 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

20 Citations (Scopus)

Characteristics of Separated-Gate JFETs

Nanver, L. K. & Goudena, E. J. G., 1 Jan 1986, In : Electronics letters. 22, 23, p. 1244-1246 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
3 Citations (Scopus)
4 Downloads (Pure)

Characterization of Tungsten Deposited by Geh4 Reduction of Wf6, and its Application as Contact Material to Si

van der Jeugd, C. A., Leusink, G. J., Oosterlaken, T. G. M., Alkemade, P. F. A., Nanver, L. K., Goudena, E. J. G., Janssen, G. C. A. M. & Radelaar, S., 1 Jan 1992, In : Journal of the Electrochemical Society. 139, 12, p. 3615-3623 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
6 Citations (Scopus)
3 Downloads (Pure)

Chemical vapor deposition of α-boron layers on silicon for controlled nanometer-deep p + n junction formation

Sarubbi, F., Scholtes, T. L. M. & Nanver, L. K., 1 Feb 2010, In : Journal of electronic materials. 39, 2, p. 162-173 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
65 Citations (Scopus)
3 Downloads (Pure)

CMOS-compatible PureGaB Ge-on-Si APD pixel arrays

Sammak, A., Aminian, M., Nanver, L. K. & Charbon, E., 1 Jan 2016, In : IEEE transactions on electron devices. 63, 1, p. 92-99 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
5 Citations (Scopus)
54 Downloads (Pure)

Conductance along the interface formed by 400 �C pure boron deposition on silicon

Qi, L. & Nanver, L. K., 1 Feb 2015, In : IEEE electron device letters. 36, 2, p. 102-104 3 p., 6998818.

Research output: Contribution to journalArticleAcademicpeer-review

19 Citations (Scopus)

Controlled growth of non-uniform arsenic profiles in silicon reduced-pressure chemical vapor deposition epitaxial layers

Popadić, M., Scholtes, T. L. M., De Boer, W., Sarubbi, F. & Nanver, L. K., Nov 2009, In : Journal of electronic materials. 38, 11, p. 2323-2328 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
4 Citations (Scopus)
3 Downloads (Pure)

Controlling transient enhanced diffusion effects in high-frequency Si0.7Ge0.3, heterojunction bipolar transistors with implanted emitters

Nanver, L. K., Visser, C. C. G. & van den Bogaard, A., 9 Jun 1998, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1533-1537 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
3 Citations (Scopus)
3 Downloads (Pure)

Control of arsenic doping during low temperature CVD epitaxy of silicon (100)

van Noort, W. D., Nanver, L. K. & Slotboom, J. W., 1 Nov 2000, In : Journal of the Electrochemical Society. 147, 11, p. 4301-4304 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

C-V profiling of ultra-shallow junctions using step-like background profiles

Popadić, M., Milovanović, V., Xu, C., Sarubbi, F. & Nanver, L. K., 1 Sep 2010, In : Solid-state electronics. 54, 9, p. 890-896 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Agarwal, V., Annema, A-J., Hueting, R. J. E., Dutta, S., Nanver, L. K. & Nauta, B., 1 Nov 2018, In : IEEE transactions on electron devices. 65, 11, p. 4883-4890 8 p., 8472882.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
4 Citations (Scopus)
51 Downloads (Pure)

Defect related photoluminescence of SiGe/Si heterostructures grown by APCVD

Shi, J. L., Nanver, L. K., Grimm, K. & Visser, C. C. G., 27 Mar 2000, In : Thin solid films. 364, 1, p. 254-258 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Design Considerations for Integrated High-Frequency p-Channel JFET's

Nanver, L. K. & Goudena, E. J. G., Nov 1988, In : IEEE transactions on electron devices. 35, 11, p. 1924-1934 11 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
6 Citations (Scopus)
3 Downloads (Pure)

Development of a 128 channel silicon drift detector for spectroscopic purposes

Valk, H., Huizenga, J., Van Eijk, C. W. E., Hollander, R. W., Nanver, L. K., Sarro, P. M. & Van Den Boogaard, A., 21 Jun 1997, In : Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 392, 1-3, p. 169-172 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
1 Citation (Scopus)
3 Downloads (Pure)

DIMES-01, a baseline BIFET process for smart sensor experimentation

Nanver, L. K., Goudena, E. J. G. & van Zeijl, H. W., 1 Jan 1993, In : Sensors and Actuators: A. Physical. 36, 2, p. 139-147 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
29 Citations (Scopus)
7 Downloads (Pure)

Effects of annealing on chemical-vapor deposited PureB layers

Mok, K. R. C., Vlooswijk, A. H. G., Mohammadi, V. & Nanver, L. K., 15 Nov 2013, In : ECS journal of solid state science and technology. 2, 9

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Electrical and optical performance investigation of si-based ultrashallow-junction p +-n VUV/EUV photodiodes

Shi, L., Nihtianov, S., Xia, S., Nanver, L. K., Gottwald, A. & Scholze, F., 1 May 2012, In : IEEE transactions on instrumentation and measurement. 61, 5, p. 1268-1277 10 p., 6163408.

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

Electrical detection and simulation of stress in silicon nitride spacer technology

Van Zeijl, H. W., Mijalcovic, S. & Nanver, L. K., 1 Apr 2001, In : Journal of Materials Science: Materials in Electronics. 12, 4-6, p. 339-341 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Electrothermal characterization of silicon-on-glass VDMOSFETs

Nenadović, N., Cuoco, V., Theeuwen, S. J. C. H., Nanver, L. K., Schellevis, H., Spierings, G., Jos, H. F. F. & Slotboom, J. W., 1 Mar 2005, In : Microelectronics reliability. 45, 3-4, p. 541-550 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Electrothermal limitations on the current density of high-frequency bipolar transistors

Nenadović, N., Nanver, L. K. & Slotboom, J. W., 1 Dec 2004, In : IEEE transactions on electron devices. 51, 12, p. 2175-2180 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)

Enabling low-distortion varactors for adaptive transmitters

Huang, C., De Vreede, L. C. N., Sarubbi, F., Popadič, M., Buisman, K., Qureshi, J., Marchetti, M., Akhnoukh, A., Scholtes, T. L. M., Larson, L. E. & Nanver, L. K., 12 May 2008, In : IEEE transactions on microwave theory and techniques. 56, 5, p. 1149-1163 15 p., 4490422.

Research output: Contribution to journalArticleAcademicpeer-review

24 Citations (Scopus)

Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector

van den Oever, L. C. M., Nanver, L. K., Scholtes, T. L. M., Van Zeijl, H. W., Van Noort, W. D., Ren, Q. W. & Slotboom, J. W., Nov 2001, In : Solid-state electronics. 45, 11, p. 1899-1904 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Experimental study of the amorphous phases of group-IV semiconductors by the119mSn Mössbauer probe

Nanver, L. K., Weyer, G. & Deutch, B. I., Jun 1982, In : Zeitschrift für Physik B Condensed Matter. 47, 2, p. 103-113 11 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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17 Citations (Scopus)
6 Downloads (Pure)

Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

Nenadović, N., Mijalković, S., Nanver, L. K., Vandamme, L. K. J., D'Alessandro, V., Schellevis, H. & Slotboom, J. W., 1 Oct 2004, In : IEEE journal of solid-state circuits. 39, 10, p. 1764-1772 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

52 Citations (Scopus)

Fabrication of nanofluidic devices in glass with polysilicon electrodes

Kutchoukov, V. G., Pakula, L., Parikesit, G. O. F., Garini, Y., Nanver, L. K. & Bossche, A., 23 Sep 2005, In : Sensors and Actuators, A: Physical. 123-124, p. 602-607 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

16 Citations (Scopus)

FM radio receiver front-end circuitry with on-chip SAW filters

van Zeijl, P. T. M., Visser, J. H. & Nanver, L. K., Aug 1989, In : IEEE Transactions on Consumer Electronics. 35, 3, p. 512-519 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
9 Citations (Scopus)
18 Downloads (Pure)

High effective gummel number of CVD boron layers in ultrashallow p +n diode configurations

Sarubbi, F., Nanver, L. K. & Scholtes, T. L. M., 1 Jun 2010, In : IEEE transactions on electron devices. 57, 6, p. 1269-1278 10 p., 5447662.

Research output: Contribution to journalArticleAcademicpeer-review

40 Citations (Scopus)

High-efficiency silicon photodiode detector for sub-keV electron microscopy

Sakic, A., van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T. L. M., de Boer, W. B., Derakhshandeh, J., Wien, W. H. A., Milosavljevic, S. & Nanver, L. K., 15 Aug 2012, In : IEEE transactions on electron devices. 59, 10, p. 2707-2714 8 p., 6261542.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)

High-speed, high-quality WEB NPN transistors with phosphorus emitters

Nanver, L. K., Goudena, E. J. G. & van Zeijl, H. W., Sep 1992, In : Microelectronic engineering. 19, 1-4, p. 539-542 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
1 Citation (Scopus)
4 Downloads (Pure)

Improved RF devices for future adaptive wireless systems using two-sided contacting and AlN cooling

Nanver, L. K., Schellevis, H., Scholtes, T. L. M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadić, M., Buisman, K., De Vreede, L. C. N., Huang, C., Milosavljević, S. & Goudena, E. J. G., 26 Aug 2009, In : IEEE journal of solid-state circuits. 44, 9, p. 2322-2338 17 p., 5226772.

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

Osrečki, Ž., Knežević, T., Nanver, L. K. & Suligoj, T., 1 Mar 2018, In : Optical and quantum electronics. 50, 3, 152.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)