1980 …2019

Research output per year

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Research Output

2013

Role of junction depth in light emission from silicon p-i-n LEDs

Piccolo, G., Sammak, A., Hueting, R. J. E., Schmitz, J. & Nanver, L. K., 16 Sep 2013, Proceeding of European Solid State Device Research Conference (ESSDERC 2013). USA: IEEE, p. 119-122 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Silicon-Filled rectangular waveguides and frequency scanning antennas for mm-Wave integrated systems

Gentile, G., Jovanović, V., Pelk, M. J., Jiang, L., Dekker, R., De Graaf, P., Rejaei, B., De Vreede, L. C. N., Nanver, L. K. & Spirito, M., 1 Jan 2013, In : IEEE transactions on antennas and propagation. 61, 12, p. 5893-5901 9 p., 6595616.

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)

Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental environment

Shi, L., Nihtianov, S., Nanver, L. K. & Scholze, F., 16 Apr 2013, In : IEEE sensors journal. 13, 5, p. 1699-1707 9 p., 6387252.

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)

Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna

Gentile, G., Rejaei, B., Jovanovic, V., Nanver, L. K., De Vreede, L. C. N. & Spirito, M., 1 Dec 2013, European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference. p. 25-28 4 p. 6687776

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

UV-sensitive low dark-count PureB single-photon avalanche diode

Qi, L., Mok, K. R. C., Charbon, E., Nanver, L. K. & Aminian, M., 1 Jan 2013, IEEE SENSORS 2013 - Proceedings. IEEE Computer Society, 6688603

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)

VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Mohammadi, V., Qi, L., Golshani, N., Mok, C. K. R., de Boer, W., Sammak, A., Derakhshandeh, J., van der Cingel, J. & Nanver, L. K., 1 Dec 2013, In : IEEE electron device letters. 34, 12, p. 1545-1547 3 p., 6651737.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)
2012

A Ge-on-Si single photon avalanche diode operating in Geiger mode at Infrared wavelengths

Aminian, M., Sammak, A., Qi, L., Nanver, L. K. & Charbon, E., 1 Dec 2012, Advanced Photon Counting Techniques VI. 83750Q. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8375).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
4 Citations (Scopus)
20 Downloads (Pure)

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 1 Dec 2012, In : Journal of Applied Physics. 112, 11, 113501.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
18 Citations (Scopus)
13 Downloads (Pure)

Applications of PureB and PureGaB ultrashallow junction technologies

Nanver, L. K., Sammak, A., Sakic, A., Mohammadi, V., Derakhshandeh, J., Mok, K. R. C., Qi, L., Golshani, N., Scholtes, T. M. L. & De Boer, W. B., 1 Dec 2012, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 6467697

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Electrical and optical performance investigation of si-based ultrashallow-junction p +-n VUV/EUV photodiodes

Shi, L., Nihtianov, S., Xia, S., Nanver, L. K., Gottwald, A. & Scholze, F., 1 May 2012, In : IEEE transactions on instrumentation and measurement. 61, 5, p. 1268-1277 10 p., 6163408.

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

Shi, L., Nihtianov, S. N., Scholze, F. & Nanver, L. K., 1 Dec 2012, Proceedings, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society. p. 3952-3957 6 p. 6389260

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Epitaxial growth of large-area p+n diodes at 400 °c by Aluminum-Induced Crystallization

Sakic, A., Qi, L., Scholtes, T. L. M., Van Der Cingel, J. & Nanver, L. K., 11 Dec 2012, 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. p. 145-148 4 p. 6343354

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor

Sammak, A., De Boer, W. B. & Nanver, L. K., 1 Dec 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 507-512 6 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

High-efficiency silicon photodiode detector for sub-keV electron microscopy

Sakic, A., van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T. L. M., de Boer, W. B., Derakhshandeh, J., Wien, W. H. A., Milosavljevic, S. & Nanver, L. K., 15 Aug 2012, In : IEEE transactions on electron devices. 59, 10, p. 2707-2714 8 p., 6261542.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)

Insights to emitter saturation current densities of boron implanted samples based on defects simulations

Mok, K. R. C., Naber, R. C. G. & Nanver, L. K., 1 Dec 2012, Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology. p. 245-248 4 p. (AIP Conference Proceedings; vol. 1496).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
6 Citations (Scopus)
5 Downloads (Pure)

Lateral-Transistor Test Structures for Evaluating the Effectiveness of Surface Doping Techniques

Qi, L., Lorito, G. & Nanver, L. K., 1 Jan 2012, In : IEEE Transactions on Semiconductor Manufacturing. 25, 4, p. 581-588 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Local-loading effects for pure-boron-layer chemical-vapor deposition

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M. & Nanver, L. K., 1 Dec 2012, Dielectric Materials and Metals for Nanoelectronics and Photonics 10. 4 ed. p. 333-341 9 p. (ECS Transactions; vol. 50, no. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Low-pressure chemical vapor deposition of pureb layers on silicon for p + n junction formation

Mok, K. R. C., Mohammadi, V., Nanver, L. K., De Boer, W. D. & Vlooswijk, A. H. G., 1 Jan 2012, IWJT 2012 - 2012 12th International Workshop on Junction Technology. Jiang, Y-L., Qu, X-P., Li, B-Z. & Ru, G-P. (eds.). IEEE, p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions

Knežević, T., Suligoj, T., Šakić, A. & Nanver, L. K., 22 Aug 2012, MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings. p. 36-41 6 p. 6240610

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Pattern dependency and loading effect of pure-boron-layer chemical-vapor deposition

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M. & Nanver, L. K., 1 Dec 2012, In : ECS journal of solid state science and technology. 1, 1

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)

Pattern dependency of pure-boron-layer chemical-vapor depositions

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M. & Nanver, L. K., 19 Nov 2012, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6 ed. p. 39-48 10 p. (ECS Transactions; vol. 45, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

PureB low-energy electron detectors with closely-packed photodiodes integrated on locally-thinned high-resistivity silicon

Sakic, A., Milosavljevic, S., Wien, W. H. A., Laros, J. M. W. & Nanver, L. K., 1 Dec 2012, IEEE SENSORS 2012: Proceedings. IEEE, 6411452

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

PureGaB p +n Ge diodes grown in large windows to Si with a sub-300 nm transition region

Sammak, A., Qi, L., de Boer, W. B. & Nanver, L. K., 1 Aug 2012, In : Solid-state electronics. 74, p. 126-133 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

Shi, L., Nihtianov, S., Haspeslagh, L., Scholze, F., Gottwald, A. & Nanver, L. K., 29 Aug 2012, In : IEEE transactions on electron devices. 59, 11, p. 2888-2894 7 p., 6280660.

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)

Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates

Evseev, S. B., Nanver, L. K. & Milosaviljevic, S., 1 Jan 2012, In : IEEE transactions on microwave theory and techniques. 60, 11, p. 3542-3550 9 p., 6341879.

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 10 Sep 2012, In : Applied physics letters. 101, 11, 111906.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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19 Citations (Scopus)
11 Downloads (Pure)
2011

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Sammak, A., Aminian, M., Qi, L., De Boer, W. B., Charbon, E. & Nanver, L. K., 1 Dec 2011, 2011 International Electron Devices Meeting, IEDM 2011. 6131515

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Analysis of electrothermal effects in bipolar differential pairs

D'Alessandro, V., La Spina, L., Nanver, L. K. & Rinaldi, N., 1 Apr 2011, In : IEEE transactions on electron devices. 58, 4, p. 966-978 13 p., 5725176.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Sakic, A., Scholtes, T. L. M., De Boer, W., Golshani, N., Derakhshandeh, J. & Nanver, L. K., 1 Dec 2011, In : Materials. 4, 12, p. 2092-2107 16 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
5 Citations (Scopus)
6 Downloads (Pure)

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Šakić, A., Nanver, L. K., Scholtes, T. L. M., Heerkens, C. T. H., Knežević, T., Veen, G. V., Kooijman, K. & Vogelsang, P., 1 Nov 2011, In : Solid-state electronics. 65-66, 1, p. 38-44 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency

Shi, L., Nanver, L. K., Laubis, C., Scholze, F. & Nihtianov, S., 1 Sep 2011, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. p. 48-51 4 p. 5969130. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

High-quality p + n Ge diodes selectively grown on Si with a sub-300nm transition region

Sammak, A., De Boer, W. D., Qi, L. & Nanver, L. K., 12 Dec 2011, ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference. p. 359-362 4 p. 6044160

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

Shi, L., Nihtianov, S., Scholze, F., Gottwald, A. & Nanver, L. K., 2 Nov 2011, UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XVII. 81450N. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8145).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
16 Citations (Scopus)
14 Downloads (Pure)

Integration of MOSFETs with SiGe dots as stressor material

Nanver, L. K., Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J. J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O. G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., Van Der Cingel, J. & Bonera, E., Jun 2011, In : Solid-state electronics. 60, 1, p. 75-83 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

Lorito, G., Qi, L. & Nanver, L. K., 9 Sep 2011, 2011 IEEE International Conference on Microelectronic Test Structures - 24th ICMTS Conference Proceedings. p. 108-113 6 p. 5976870. (IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Biasotto, C., Gonda, V., Nanver, L. K., Scholtes, T. L. M., Van Der Cingel, J., Vidal, D. & Jovanović, V., 1 Nov 2011, In : Journal of electronic materials. 40, 11, p. 2187-2196 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
3 Downloads (Pure)

Optimization of the perimeter doping of ultrashallow p+-n --n- photodiodes

Knežević, T., Suligoj, T., Šakić, A. & Nanver, L. K., 6 Sep 2011, MIPRO 2011 - 34th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings. p. 44-48 5 p. 5967021

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Series resistance optimization of high-sensitivity Si-based VUV photodiodes

Shi, L., Nanver, L. K., Šakić, A., Nihtianov, S., Knežević, T., Gottwald, A. & Kroth, U., 25 Aug 2011, 2011 IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2011 - Proceedings. p. 818-821 4 p. 5944073

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment

Shi, L., Nanver, L. K. & Nihtianov, S. N., 1 Dec 2011, IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society. p. 2651-2656 6 p. 6119729

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Hrauda, N., Zhang, J., Wintersberger, E., Etzelstorfer, T., Mandl, B., Stangl, J., Carbone, D., Holý, V., Jovanović, V., Biasotto, C., Nanver, L. K., Moers, J., Grützmacher, D. & Bauer, G., 13 Jul 2011, In : Nano letters. 11, 7, p. 2875-2880 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

49 Citations (Scopus)
2010

Al-mediated solid-phase epitaxy of silicon-on-insulator

Šakić, A., Civale, Y., Nanver, L. K., Biasotto, C. & Jovanović, V., 24 Dec 2010, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010. p. 427-432 6 p. (Materials Research Society Symposium Proceedings; vol. 1245).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

Lorito, G., Qi, L. & Nanver, L., 1 Dec 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 972-974 3 p. 5667505

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

Šakić, A., Jovanović, V., Maleki, P., Scholtes, T. L. M., Milosavljević, S. & Nanver, L. K., 13 Sep 2010, MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings. p. 26-29 4 p. 5533699

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

Sammak, A., Qi, L., De Boer, W. B. & Nanver, L. K., 1 Dec 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 969-971 3 p. 5667503

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Chemical vapor deposition of α-boron layers on silicon for controlled nanometer-deep p + n junction formation

Sarubbi, F., Scholtes, T. L. M. & Nanver, L. K., 1 Feb 2010, In : Journal of electronic materials. 39, 2, p. 162-173 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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65 Citations (Scopus)
3 Downloads (Pure)

C-V profiling of ultra-shallow junctions using step-like background profiles

Popadić, M., Milovanović, V., Xu, C., Sarubbi, F. & Nanver, L. K., 1 Sep 2010, In : Solid-state electronics. 54, 9, p. 890-896 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Deep p+ junctions formed by drive-in from pure boron depositions

Maleki, P., Scholtes, T. L. M., Popadić, M., Sarubbi, F., Lorito, G., Milosavljevic, S., De Boer, W. B. & Nanver, L. K., 9 Jul 2010, IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology. p. 120-123 4 p. 5474973

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Design concepts for semiconductor based ultra-linear varactor circuits (invited)

Huang, C., Buisman, K., Nanver, L. K., Zampardi, P. J., Larson, L. E. & De Vreede, L. C. N., 1 Dec 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010. p. 204-211 8 p. 5668027

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)

High effective gummel number of CVD boron layers in ultrashallow p +n diode configurations

Sarubbi, F., Nanver, L. K. & Scholtes, T. L. M., 1 Jun 2010, In : IEEE transactions on electron devices. 57, 6, p. 1269-1278 10 p., 5447662.

Research output: Contribution to journalArticleAcademicpeer-review

40 Citations (Scopus)

Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II - Dynamic analysis

Russo, S., La Spina, L., D'Alessandro, V., Rinaldi, N. & Nanver, L. K., Aug 2010, In : Solid-state electronics. 54, 8, p. 754-762 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)