1980 …2020

Research output per year

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Research Output

Article

Thermally induced current bifurcation in bipolar transistors

La Spina, L., Nenadović, N., d'Alessandro, V., Tamigi, F., Rinaldi, N., Nanver, L. K. & Slotboom, J. W., 1 May 2006, In : Solid-state electronics. 50, 5, p. 877-888 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Time scales of transient enhanced diffusion: Free and clustered interstitials

Cowern, N. E. B., Huizing, H. G. A., Stolk, P. A., Visser, C. C. G., de Kruif, R. C. M., Kyllesbech Larsen, K., Privitera, V., Nanver, L. K. & Crans, W., Dec 1996, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 120, 1-4, p. 14-18 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
15 Citations (Scopus)
23 Downloads (Pure)

Ultra-high aspect-ratio FinFET technology

Jovanović, V., Suligoj, T., Poljak, M., Civale, Y. & Nanver, L. K., 1 Sep 2010, In : Solid-state electronics. 54, 9, p. 870-876 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Huang, C., Buisman, K., Marchetti, M., Nanver, L. K., Sarubbi, F., Popadić, M., Scholtes, T. L. M., Schellevis, H., Larson, L. E. & De Vreede, L. C. N., 8 Jan 2009, In : IEEE transactions on microwave theory and techniques. 57, 1, p. 205-215 11 p., 4711066.

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)

UV-sensitive low dark-count pureb single-photon avalanche diode

Qi, L., Mok, K. R. C., Aminian, M., Charbon, E. & Nanver, L. K., 1 Nov 2014, In : IEEE transactions on electron devices. 61, 11, p. 3768-3774 7 p., 6894558.

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)

VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Mohammadi, V., Qi, L., Golshani, N., Mok, C. K. R., de Boer, W., Sammak, A., Derakhshandeh, J., van der Cingel, J. & Nanver, L. K., 1 Dec 2013, In : IEEE electron device letters. 34, 12, p. 1545-1547 3 p., 6651737.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)

X-ray diffraction study of the composition and strain fields in buried SiGe islands

Hrauda, N., Zhang, J. J., Stoffel, M., Stangl, J., Bauer, G., Rehman-Khan, A., Holý, V., Schmidt, O. G., Jovanovic, V. & Nanver, L. K., 9 Apr 2009, In : European Physical Journal: Special Topics. 167, 1, p. 41-46 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

Hrauda, N., Zhang, J. J., Stangl, J., Rehman-Khan, A., Bauer, G., Stoffel, M., Schmidt, O. G., Jovanovich, V. & Nanver, L. K., 30 Mar 2009, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27, 2, p. 912-918 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
13 Citations (Scopus)
4 Downloads (Pure)

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Hrauda, N., Zhang, J., Wintersberger, E., Etzelstorfer, T., Mandl, B., Stangl, J., Carbone, D., Holý, V., Jovanović, V., Biasotto, C., Nanver, L. K., Moers, J., Grützmacher, D. & Bauer, G., 13 Jul 2011, In : Nano letters. 11, 7, p. 2875-2880 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

49 Citations (Scopus)
Conference article

A low-cost BiCMOS process with metal gates

Van Zeijl, H. W. & Nanver, L. K., 1 Jan 2001, In : Materials Research Society Symposium - Proceedings. 611

Research output: Contribution to journalConference articleAcademicpeer-review

Annealing experiments on supercritical Si1-x Gex layers grown by RPCVD

Grimm, K., Vescan, L., Visser, C. C. G., Nanver, L. K. & Lüth, H., 19 Jan 2000, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 69-70, p. 261-265 5 p.

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)

Backwafer optical lithography and wafer distortion in substrate transfer technologies

van Zeijl, H. W., Slabbekoorn, J., Nanver, L. K., van Dijk, P. W. L., Berthold, A. & Machielsen, T., 18 Aug 2000, In : Proceedings of SPIE - the international society for optical engineering. 4181, 1, p. 200-207 8 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Open Access
File
8 Citations (Scopus)
14 Downloads (Pure)

Design and characterization of integrated passive elements on high ohmic silicon̈

Valletta, E., Van Beek, J., Den Dekker, A., Pulsford, N., Jos, H. F. F., De Vreede, L. C. N., Nanver, L. K. & Burghartz, J. N., 18 Aug 2003, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 1235-1238 4 p.

Research output: Contribution to journalConference articleAcademicpeer-review

18 Citations (Scopus)

Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

Gonda, V., Liu, S., Scholtes, T. L. M. & Nanver, L. K., 21 Nov 2006, In : Materials Research Society Symposium Proceedings. 912, p. 173-177 5 p.

Research output: Contribution to journalConference articleAcademicpeer-review

5 Citations (Scopus)

Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

Visser, C. C. G., Nanver, L. K. & van den Bogaard, A., 1998, In : Materials Research Society Symposium - Proceedings. 533, p. 105-110 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)

Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents

Sammak, A., Aminian, M., Qi, L., De Boer, W. B., Charbon, E. & Nanver, L. K., 1 Jan 2014, In : ECS transactions. 64, 6, p. 737-745 9 p.

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)

Ionizing-radiation induced degradation of SiGe HBTs

Topkar, A., Lodha, S., Mahfooz, A. T., Vasi, J., LaL, R. & Nanver, L., 1 Jan 2000, In : Proceedings of SPIE - the international society for optical engineering. 3975

Research output: Contribution to journalConference articleAcademicpeer-review

Low-temperature solid-phase epitaxy of defect-free aluminum p +-doped silicon for nanoscale device applications

Civale, Y., Nanver, L. K., Hadley, P., Goudena, E. J. G., Van Zeijl, H. W. & Schellevis, H., 1 Dec 2006, In : Materials Research Society Symposium Proceedings. 940, p. 1-6 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)

Radiation-induced degradation of bipolar transistors

Topkar, A., Mathew, T., Lal, R., Vasi, J. & Nanver, L., 1 Dec 1998, In : Proceedings of SPIE - the international society for optical engineering. 3316, 1, p. 686-689 4 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

Van Dijk, B. D., Van Der Wilt, P. C., Bertens, G. J., Nanver, L. K. & Ishihara, R., 1 Dec 2001, In : Materials Research Society symposia proceedings. 685, p. 299-304 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

Popadić, M., Sarubbi, F., Scholtes, T. L. M. & Nanver, L. K., 1 Dec 2006, In : ECS transactions. 4, 1, p. 393-399 7 p.

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)
Conference contribution

1.9 nm wide ultra-high aspect-ratio bulk-si FinFETs

Jovanović, V., Poljak, M., Suligoj, T., Civale, Y. & Nanver, L. K., 11 Dec 2009, 67th Device Research Conference, DRC 2009. p. 261-262 2 p. 5354923. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

Knežević, T., Nanver, L. K. & Suligoj, T., 23 Feb 2018, Physics and Simulation of Optoelectronic Devices XXVI: SPIE OPTO, 27 January - 1 February 2018, San Francisco, California, United States. Witzigmann, B., Osiński, M. & Arakawa, Y. (eds.). Bellingham, WA: SPIE, 10 p. 105261K. (Proceedings of SPIE; vol. 10526).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
1 Downloads (Pure)

50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes

Gentile, G., Buisman, K., Akhoukh, A., De Vreede, L. C. N., Rejaei, B. & Nanver, L. K., 24 Sep 2008, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers. p. 199-202 4 p. 4446290

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

Sammak, A., Aminian, M., Qi, L., Charbon, E. & Nanver, L. K., 1 Jan 2014, Optical Sensing and Detection III. SPIE, 914104. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 9141).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
2 Citations (Scopus)
6 Downloads (Pure)

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Sammak, A., Aminian, M., Qi, L., De Boer, W. B., Charbon, E. & Nanver, L. K., 1 Dec 2011, 2011 International Electron Devices Meeting, IEDM 2011. 6131515

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)

A Ge-on-Si single photon avalanche diode operating in Geiger mode at Infrared wavelengths

Aminian, M., Sammak, A., Qi, L., Nanver, L. K. & Charbon, E., 1 Dec 2012, Advanced Photon Counting Techniques VI. 83750Q. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8375).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Open Access
File
4 Citations (Scopus)
22 Downloads (Pure)

Al-mediated solid-phase epitaxy of silicon-on-insulator

Šakić, A., Civale, Y., Nanver, L. K., Biasotto, C. & Jovanović, V., 24 Dec 2010, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010. p. 427-432 6 p. (Materials Research Society Symposium Proceedings; vol. 1245).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon

Evseev, S. B., Nanver, L. K. & Milosavljević, S., 1 Jan 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013. IEEE, 6798148

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

A low-loss compact linear varactor based phase-shifter

Qureshi, J. H., Kim, S., Buisman, K., Huang, C., Pelk, M. J., Akhnoukh, A., Larson, L. E., Nanver, L. K. & De Vreede, L. C. N., 2 Oct 2007, Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007. p. 453-456 4 p. 4266470

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)

Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

La Spina, L., Marano, I., d'Alessandro, V., Schellevis, H. & Nanver, L. K., 20 May 2008, EuroSimE 2008: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems. IEEE Computer Society, 4525061

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Analysis of electrothermal effects in bipolar current mirrors

D'Alessandro, V., Nanver, L. K., Zampardi, P. J. & Rinaldi, N., 1 Dec 2007, Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. p. 127-130 4 p. 4351852

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

Van Den Oever, L. C. M., Nanver, L. K. & Slotboom, J. W., 1 Jan 2000, 30th European Solid-State Device Research Conference. Grunbacher, H., Crean, G. M., Lane, W. A. & McCabe, F. A. (eds.). IEEE Computer Society Press, p. 568-571 4 p. 1503771

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Analytical carrier transport model for arbitrarily shallow p-n junctions

Popadić, M., Lorito, G. & Nanver, L. K., 19 Sep 2008, 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008. IEEE, p. 155-158 4 p. 4559246

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Analytical formulation and electrical measurements of self-heating in silicon BJT's

Nenadović, N., D'Alessandro, V., Nanver, L. K., Rinaldi, N., Schellevis, H. & Slotboom, J. W., 1 Jan 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. p. 24-27 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

Cuoco, V., Neo, W. C. E., De Vreede, L. C. N., De Graaff, H. C., Nanver, L. K., Buisman, K., Wu, H. C., Jos, H. F. F. & Burghartz, J. N., 1 Dec 2004, Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004. p. 148-151 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

An experimental view on PureB silicon photodiode device physics

Nanver, L. K., 28 Jun 2018, 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
2 Downloads (Pure)

A novel SPICE macromodel of BJTs including the temperature dependence of high-injection effects

D'Alessandro, V., Nenadović, N., Tamigi, F., Rinaldi, N., Nanver, L. K. & Slotboom, J. W., 19 Jul 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716). p. 253-256 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

A novel vertical DMOS transistor in SOA technology for RF-power applications

Nenadović, N., Cuoco, V., Theeuwen, S. J. C. H., Nanver, L. K., Jos, H. F. F. & Slotboom, J. W., 1 Jan 2002, 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. IEEE Computer Society Press, Vol. 1. p. 159-162 4 p. 1003164

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Application of laser annealing in the EU FP6 project D-DotFET

Nanver, L. K., Jovanović, V., Biasotto, C., Van Der Cingel, J. & Milosavljević, S., 1 Dec 2009, 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 5373443

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Applications of PureB and PureGaB ultrashallow junction technologies

Nanver, L. K., Sammak, A., Sakic, A., Mohammadi, V., Derakhshandeh, J., Mok, K. R. C., Qi, L., Golshani, N., Scholtes, T. M. L. & De Boer, W. B., 1 Dec 2012, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 6467697

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing

Lorito, G., Qi, L. & Nanver, L., 1 Dec 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 972-974 3 p. 5667505

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M. & Nanver, L. K., 1 Jan 2013, Thermal and Plasma CVD of Nanostructures and Their Applications. 31 ed. The Electrochemical Society Inc., p. 57-65 9 p. (ECS Transactions; vol. 45, no. 31).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C

Knežević, T., Suligoj, T., Liu, X., Nanver, L. K., Elsayed, A., Dick, J. F. & Schulze, J., 1 Sep 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC). IEEE, p. 242-245 4 p. 8901810. (European Solid-State Device Research Conference; vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Downloads (Pure)

Base-contact proximity effects in bipolar transistors with nitride-spacer technology

van Zeijl, H. & Nanver, L. K., 1 Dec 2005, Proceedings of 35th European Solid-State Device Research Conference, ESSDERC 2005. IEEE, p. 461-464 4 p. 1546684

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range

Knezević, T., Krakers, M. & Nanver, L. K., 3 Mar 2020, Optical Components and Materials XVII. Jiang, S. & Digonnet, M. J. F. (eds.). SPIE Press, 112760I. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11276).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Bulk-Si FinFET technology for ultra-high aspect-ratio devices

Jovanovic, V., Nanver, L. K., Suligoj, T. & Poljak, M., 1 Dec 2009, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. p. 241-244 4 p. 5331554

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

van Zeijl, H. W. & Nanver, L. K., 1 Dec 1998, 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings. p. 98-101 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

Šakić, A., Jovanović, V., Maleki, P., Scholtes, T. L. M., Milosavljević, S. & Nanver, L. K., 13 Sep 2010, MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings. p. 26-29 4 p. 5533699

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)

Characterization of PVD aluminum nitride for heat spreading in RF IC's

La Spina, L., Nanver, L. K., Schellevis, H., Iborra, E., Clement, M. & Olivares, J., 1 Jan 2008, ESSDERC 2007: Proceedings of the 37th European Solid State Device Research Conference. Schmitt-Landsiedel, D. & Thewes, R. (eds.). IEEE Computer Society, p. 354-357 4 p. 4430951. (European Solid State Device Research Conference. Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)