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Research Output 1980 2019

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Article
2019
3 Citations (Scopus)
3 Downloads (Pure)

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Knezevic, T., Liu, X., Hardeveld, E., Suligoj, T. & Nanver, L. K., 1 Jun 2019, In : IEEE electron device letters. 40, 6, p. 858-861 4 p., 8686173.

Research output: Contribution to journalArticleAcademicpeer-review

Electron injection
Boron
Diodes
Metals
Monolayers
1 Downloads (Pure)

Silicon micromachining with nanometer-thin boron masking and membrane material

Liu, X., Italiano, J., Scott, R. & Nanver, L. K., 18 Oct 2019, In : Materials Research Express. 6, 11, 116438.

Research output: Contribution to journalArticleAcademicpeer-review

Boron
Micromachining
Silicon
Membranes
Chemical vapor deposition
2018
3 Citations (Scopus)
48 Downloads (Pure)

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Agarwal, V., Annema, A-J., Hueting, R. J. E., Dutta, S., Nanver, L. K. & Nauta, B., 1 Nov 2018, In : IEEE transactions on electron devices. 65, 11, p. 4883-4890 8 p., 8472882.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Silicon
Data communication systems
Light emitting diodes
Jitter
Leakage currents
1 Citation (Scopus)

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

Osrečki, Ž., Knežević, T., Nanver, L. K. & Suligoj, T., 1 Mar 2018, In : Optical and quantum electronics. 50, 3, 152.

Research output: Contribution to journalArticleAcademicpeer-review

Avalanche diodes
avalanche diodes
Crosstalk
crosstalk
Photons
4 Citations (Scopus)
6 Downloads (Pure)

Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Nanver, L. K., Lyon, K., Liu, X., Italiano, J. & Huffman, J., 26 Jun 2018, In : MRS Advances. 3, 57-58, p. 3397-3402 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

photodiodes
boron
fabrication
silicon
diodes
2 Citations (Scopus)
54 Downloads (Pure)

Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

Agarwal, V., Annema, A. J., Dutta, S., Hueting, R. J. E., Nanver, L. K. & Nauta, B., 10 May 2018, In : Journal of the Electron Devices Society. 6, 1, p. 642-652 11 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Avalanches
Avalanche diodes
Telegraph
Silicon
Defects
2017
9 Citations (Scopus)
1 Downloads (Pure)

Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining

Liu, X., Nanver, L. K. & Scholtes, T. L. M., Dec 2017, In : Journal of microelectromechanical systems. 26, 6, p. 1428-1434

Research output: Contribution to journalArticleAcademicpeer-review

Ammonium hydroxide
Micromachining
Boron
Masks
Etching
2016
5 Citations (Scopus)
52 Downloads (Pure)

CMOS-compatible PureGaB Ge-on-Si APD pixel arrays

Sammak, A., Aminian, M., Nanver, L. K. & Charbon, E., 1 Jan 2016, In : IEEE transactions on electron devices. 63, 1, p. 92-99 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
4 Citations (Scopus)
30 Downloads (Pure)

Silicon drift detectors with the drift field induced by pureB-coated trenches

Nanver, L. K., Kneževi´c, T. & Suligoj, T., 29 Oct 2016, In : Photonics. 3, 54, p. 1-18 18 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
2015
4 Citations (Scopus)
1 Downloads (Pure)

Boron-doped silicon surfaces from B2H6 passivated by ALD Al2O3 for solar cells

Mok, K. R. C. C., van de Loo, B. W. H., Vlooswijk, A. H. G., Kessels, W. M. M. E. & Nanver, L. K., 1 Sep 2015, In : IEEE journal of photovoltaics. 5, 5, p. 1310-1318 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

19 Citations (Scopus)

Conductance along the interface formed by 400 �C pure boron deposition on silicon

Qi, L. & Nanver, L. K., 1 Feb 2015, In : IEEE electron device letters. 36, 2, p. 102-104 3 p., 6998818.

Research output: Contribution to journalArticleAcademicpeer-review

Negative temperature coefficient
Inversion layers
Boron
Carrier transport
Sheet resistance
21 Citations (Scopus)

Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

Dutta, S., Hueting, R. J. E., Annema, A. J., Qi, L., Nanver, L. K. & Schmitz, J., 18 Sep 2015, In : Journal of applied physics. 118, p. 1-10 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

Qi, L., Sluyterman, S., Kooijman-van Dijk, A. L., Mok, K. R. C. & Nanver, L. K., 1 Feb 2015, In : Optics letters. 40, 3, p. 300-303 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

avalanche diodes
entrances
boron
electron energy
sensitivity
52 Downloads (Pure)

Restricted-access al-mediated material transport in al contacting of pureGaB Ge-on-Si p+n diodes

Sammak, A., Qi, L. & Nanver, L. K., Dec 2015, In : Journal of electronic materials. 44, 12, p. 4676-4683 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
4 Citations (Scopus)

Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

Mok, K. R. C., Qi, L., Vlooswijk, A. H. G. & Nanver, L. K., 11 Jun 2015, In : Solid-state electronics. 111, p. 210-217 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Silicon-based technology for integrated waveguides and mm-Wave systems

Jovanovic, V., Gentile, G., Dekker, R., de Graaf, P., de Vreede, L. C. N., Nanver, L. K. & Spirito, M., 1 Oct 2015, In : IEEE transactions on electron devices. 62, 10, p. 3153-3159 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

2014
3 Citations (Scopus)

Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Evseev, S. B., Nanver, L. K., Rejaei, B. & Milosavljević, S., 1 Aug 2014, In : Microelectronic engineering. 125, p. 2-7 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Microwave frequencies
Silicon
Amorphous silicon
Silicon carbide
Nitrides
32 Citations (Scopus)

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Nanver, L. K., Qi, L., Mohammadi, V., Mok, K. R. M., De Boer, W. B., Golshani, N., Sammak, A., Scholtes, T. L. M., Gottwald, A., Kroth, U. & Scholze, F., 1 Jan 2014, In : IEEE Journal on Selected Topics in Quantum Electronics. 20, 6, 6805604.

Research output: Contribution to journalArticleAcademicpeer-review

Photodiodes
compatibility
photodiodes
CMOS
Diodes
14 Citations (Scopus)

Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO2 surfaces

Mohammadi, V., Golshani, N., Mok, K. R. C., De Boer, W. B., Derakhshandeh, J. & Nanver, L. K., 1 Aug 2014, In : Microelectronic engineering. 125, p. 45-50 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Oxides
Chemical vapor deposition
vapor deposition
Kinetics
Boron
18 Citations (Scopus)

UV-sensitive low dark-count pureb single-photon avalanche diode

Qi, L., Mok, K. R. C., Aminian, M., Charbon, E. & Nanver, L. K., 1 Nov 2014, In : IEEE transactions on electron devices. 61, 11, p. 3768-3774 7 p., 6894558.

Research output: Contribution to journalArticleAcademicpeer-review

Avalanche diodes
Photons
Wavelength
Boron
Chemical vapor deposition
2013
1 Citation (Scopus)

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Sakic, A., Qi, L., Scholtes, T. L. M., Van Der Cingel, J. & Nanver, L. K., 1 Jun 2013, In : Solid-state electronics. 84, p. 65-73 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

Silicon
Aluminum
p-n junctions
Epitaxial growth
epitaxy
8 Citations (Scopus)

Effects of annealing on chemical-vapor deposited PureB layers

Mok, K. R. C., Vlooswijk, A. H. G., Mohammadi, V. & Nanver, L. K., 15 Nov 2013, In : ECS journal of solid state science and technology. 2, 9

Research output: Contribution to journalArticleAcademicpeer-review

Boron
Vapors
Annealing
Oxides
Oxygen
21 Citations (Scopus)

Silicon-Filled rectangular waveguides and frequency scanning antennas for mm-Wave integrated systems

Gentile, G., Jovanović, V., Pelk, M. J., Jiang, L., Dekker, R., De Graaf, P., Rejaei, B., De Vreede, L. C. N., Nanver, L. K. & Spirito, M., 1 Jan 2013, In : IEEE transactions on antennas and propagation. 61, 12, p. 5893-5901 9 p., 6595616.

Research output: Contribution to journalArticleAcademicpeer-review

Scanning antennas
Rectangular waveguides
Waveguides
Antenna arrays
Millimeter waves
15 Citations (Scopus)

Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental environment

Shi, L., Nihtianov, S., Nanver, L. K. & Scholze, F., 16 Apr 2013, In : IEEE sensors journal. 13, 5, p. 1699-1707 9 p., 6387252.

Research output: Contribution to journalArticleAcademicpeer-review

Photodiodes
extreme ultraviolet radiation
photodiodes
Boron
Diodes
22 Citations (Scopus)

VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Mohammadi, V., Qi, L., Golshani, N., Mok, C. K. R., de Boer, W., Sammak, A., Derakhshandeh, J., van der Cingel, J. & Nanver, L. K., 1 Dec 2013, In : IEEE electron device letters. 34, 12, p. 1545-1547 3 p., 6651737.

Research output: Contribution to journalArticleAcademicpeer-review

Boron
Photodiodes
Electrons
Ultraviolet radiation
Chemical vapor deposition
2012
17 Citations (Scopus)
11 Downloads (Pure)

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 1 Dec 2012, In : Journal of applied physics. 112, 11, 113501.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
diborane
reactors
vapor deposition
kinetics
wafers
17 Citations (Scopus)

Electrical and optical performance investigation of si-based ultrashallow-junction p +-n VUV/EUV photodiodes

Shi, L., Nihtianov, S., Xia, S., Nanver, L. K., Gottwald, A. & Scholze, F., 1 May 2012, In : IEEE transactions on instrumentation and measurement. 61, 5, p. 1268-1277 10 p., 6163408.

Research output: Contribution to journalArticleAcademicpeer-review

Photodiodes
p-n junctions
photodiodes
Diodes
diodes
22 Citations (Scopus)

High-efficiency silicon photodiode detector for sub-keV electron microscopy

Sakic, A., van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T. L. M., de Boer, W. B., Derakhshandeh, J., Wien, W. H. A., Milosavljevic, S. & Nanver, L. K., 15 Aug 2012, In : IEEE transactions on electron devices. 59, 10, p. 2707-2714 8 p., 6261542.

Research output: Contribution to journalArticleAcademicpeer-review

Silicon
Photodiodes
Electron microscopy
Detectors
Boron
3 Citations (Scopus)

Lateral-Transistor Test Structures for Evaluating the Effectiveness of Surface Doping Techniques

Qi, L., Lorito, G. & Nanver, L. K., 1 Jan 2012, In : IEEE Transactions on Semiconductor Manufacturing. 25, 4, p. 581-588 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

Arsenic
Transistors
Diodes
transistors
Doping (additives)
15 Citations (Scopus)

Pattern dependency and loading effect of pure-boron-layer chemical-vapor deposition

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M. & Nanver, L. K., 1 Dec 2012, In : ECS journal of solid state science and technology. 1, 1

Research output: Contribution to journalArticleAcademicpeer-review

Boron
Deposition rates
Chemical vapor deposition
Oxides
Boundary layers
7 Citations (Scopus)

PureGaB p +n Ge diodes grown in large windows to Si with a sub-300 nm transition region

Sammak, A., Qi, L., de Boer, W. B. & Nanver, L. K., 1 Aug 2012, In : Solid-state electronics. 74, p. 126-133 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

Diodes
diodes
reactors
junction diodes
Doping (additives)
21 Citations (Scopus)

Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

Shi, L., Nihtianov, S., Haspeslagh, L., Scholze, F., Gottwald, A. & Nanver, L. K., 29 Aug 2012, In : IEEE transactions on electron devices. 59, 11, p. 2888-2894 7 p., 6280660.

Research output: Contribution to journalArticleAcademicpeer-review

Silicon
Surface charge
Photodiodes
Diodes
Boron
6 Citations (Scopus)

Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates

Evseev, S. B., Nanver, L. K. & Milosaviljevic, S., 1 Jan 2012, In : IEEE transactions on microwave theory and techniques. 60, 11, p. 3542-3550 9 p., 6341879.

Research output: Contribution to journalArticleAcademicpeer-review

Sheet resistance
Surface charge
Silicon
electrical resistivity
silicon
18 Citations (Scopus)
7 Downloads (Pure)

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 10 Sep 2012, In : Applied physics letters. 101, 11, 111906.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
diborane
boron
vapor deposition
activation energy
temperature dependence
2011
9 Citations (Scopus)

Analysis of electrothermal effects in bipolar differential pairs

D'Alessandro, V., La Spina, L., Nanver, L. K. & Rinaldi, N., 1 Apr 2011, In : IEEE transactions on electron devices. 58, 4, p. 966-978 13 p., 5725176.

Research output: Contribution to journalArticleAcademicpeer-review

Impact ionization
Networks (circuits)
Silicon
Resistors
Hysteresis
5 Citations (Scopus)
4 Downloads (Pure)

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Sakic, A., Scholtes, T. L. M., De Boer, W., Golshani, N., Derakhshandeh, J. & Nanver, L. K., 1 Dec 2011, In : Materials. 4, 12, p. 2092-2107 16 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Epitaxial layers
Arsenic
Silicon
Diodes
Capacitance
10 Citations (Scopus)

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Šakić, A., Nanver, L. K., Scholtes, T. L. M., Heerkens, C. T. H., Knežević, T., Veen, G. V., Kooijman, K. & Vogelsang, P., 1 Nov 2011, In : Solid-state electronics. 65-66, 1, p. 38-44 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Boron
Silicon
Photodiodes
photodiodes
boron
13 Citations (Scopus)

Integration of MOSFETs with SiGe dots as stressor material

Nanver, L. K., Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J. J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O. G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., Van Der Cingel, J. & Bonera, E., Jun 2011, In : Solid-state electronics. 60, 1, p. 75-83 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

Silicon
field effect transistors
Processing
Germanium
silicon
2 Downloads (Pure)

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Biasotto, C., Gonda, V., Nanver, L. K., Scholtes, T. L. M., Van Der Cingel, J., Vidal, D. & Jovanović, V., 1 Nov 2011, In : Journal of electronic materials. 40, 11, p. 2187-2196 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
electric contacts
Diodes
leakage
diodes
Fabrication
49 Citations (Scopus)

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Hrauda, N., Zhang, J., Wintersberger, E., Etzelstorfer, T., Mandl, B., Stangl, J., Carbone, D., Holý, V., Jovanović, V., Biasotto, C., Nanver, L. K., Moers, J., Grützmacher, D. & Bauer, G., 13 Jul 2011, In : Nano letters. 11, 7, p. 2875-2880 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Field effect transistors
Semiconductor quantum dots
field effect transistors
quantum dots
mechanical devices
2010
65 Citations (Scopus)
2 Downloads (Pure)

Chemical vapor deposition of α-boron layers on silicon for controlled nanometer-deep p + n junction formation

Sarubbi, F., Scholtes, T. L. M. & Nanver, L. K., 1 Feb 2010, In : Journal of electronic materials. 39, 2, p. 162-173 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Boron
Silicon
Secondary ion mass spectrometry
p-n junctions
spatial isotropy

C-V profiling of ultra-shallow junctions using step-like background profiles

Popadić, M., Milovanović, V., Xu, C., Sarubbi, F. & Nanver, L. K., 1 Sep 2010, In : Solid-state electronics. 54, 9, p. 890-896 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Boron
Epitaxial growth
Diodes
Doping (additives)
Fabrication
39 Citations (Scopus)

High effective gummel number of CVD boron layers in ultrashallow p +n diode configurations

Sarubbi, F., Nanver, L. K. & Scholtes, T. L. M., 1 Jun 2010, In : IEEE transactions on electron devices. 57, 6, p. 1269-1278 10 p., 5447662.

Research output: Contribution to journalArticleAcademicpeer-review

Boron
Chemical vapor deposition
Diodes
Silicon
Atmospheric pressure
5 Citations (Scopus)

Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II - Dynamic analysis

Russo, S., La Spina, L., D'Alessandro, V., Rinaldi, N. & Nanver, L. K., Aug 2010, In : Solid-state electronics. 54, 8, p. 754-762 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

Bipolar transistors
bipolar transistors
layouts
Dynamic analysis
emitters
4 Citations (Scopus)

Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis

Russo, S., La Spina, L., D'Alessandro, V., Rinaldi, N. & Nanver, L. K., Aug 2010, In : Solid-state electronics. 54, 8, p. 745-753 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

Bipolar transistors
Static analysis
bipolar transistors
layouts
junction transistors
38 Citations (Scopus)

N-channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Jovanovic, V., Biasotto, C., Nanver, L. K., Moers, J., Grutzmacher, D., Gerharz, J., Mussler, G., Van Der Cingel, J., Zhang, J. J., Bauer, G., Schmidt, O. G. & Miglio, L., Oct 2010, In : IEEE electron device letters. 31, 10, p. 1083-1085 3 p., 5557748.

Research output: Contribution to journalArticleAcademicpeer-review

Silicon
Germanium
MOS devices
Tensile strain
Drain current
22 Citations (Scopus)
3 Downloads (Pure)

Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

Shi, L., Sarubbi, F., Nanver, L. K., Kroth, U., Gottwald, A. & Nihtianov, S., 1 Jan 2010, In : Procedia engineering. 5, p. 633-636 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Nanoelectronics
Microsystems
Photodiodes
Vacuum
Detectors
2 Citations (Scopus)
7 Downloads (Pure)

Thermal budget considerations for excimer laser annealing of implanted dopants

Gonda, V., Venturini, J., Sabatier, C., Van Der Cingel, J. & Nanver, L. K., 1 Mar 2010, In : Journal of optoelectronics and advanced materials. 12, 3, p. 466-469 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
laser annealing
Excimer lasers
budgets
excimer lasers
Doping (additives)
5 Citations (Scopus)

Thermal design of multifinger bipolar transistors

La Spina, L., D'Alessandro, V., Russo, S. & Nanver, L. K., 1 Aug 2010, In : IEEE transactions on electron devices. 57, 8, p. 1789-1800 12 p., 5487380.

Research output: Contribution to journalArticleAcademicpeer-review

Bipolar transistors
Silicon
Heat resistance
Topography
Spreaders
22 Citations (Scopus)

Ultra-high aspect-ratio FinFET technology

Jovanović, V., Suligoj, T., Poljak, M., Civale, Y. & Nanver, L. K., 1 Sep 2010, In : Solid-state electronics. 54, 9, p. 870-876 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

fins
high aspect ratio
Aspect ratio
Silicon
silicon