1980 …2020

Research output per year

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2019

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Knezevic, T., Liu, X., Hardeveld, E., Suligoj, T. & Nanver, L. K., 1 Jun 2019, In : IEEE electron device letters. 40, 6, p. 858-861 4 p., 8686173.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)
4 Downloads (Pure)

Silicon micromachining with nanometer-thin boron masking and membrane material

Liu, X., Italiano, J., Scott, R. & Nanver, L. K., 18 Oct 2019, In : Materials Research Express. 6, 11, 116438.

Research output: Contribution to journalArticleAcademicpeer-review

1 Downloads (Pure)
2018

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Agarwal, V., Annema, A-J., Hueting, R. J. E., Dutta, S., Nanver, L. K. & Nauta, B., 1 Nov 2018, In : IEEE transactions on electron devices. 65, 11, p. 4883-4890 8 p., 8472882.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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4 Citations (Scopus)
57 Downloads (Pure)

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

Osrečki, Ž., Knežević, T., Nanver, L. K. & Suligoj, T., 1 Mar 2018, In : Optical and quantum electronics. 50, 3, 152.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Nanver, L. K., Lyon, K., Liu, X., Italiano, J. & Huffman, J., 26 Jun 2018, In : MRS Advances. 3, 57-58, p. 3397-3402 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
6 Downloads (Pure)

Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

Agarwal, V., Annema, A. J., Dutta, S., Hueting, R. J. E., Nanver, L. K. & Nauta, B., 10 May 2018, In : Journal of the Electron Devices Society. 6, 1, p. 642-652 11 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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3 Citations (Scopus)
64 Downloads (Pure)
2017

Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining

Liu, X., Nanver, L. K. & Scholtes, T. L. M., Dec 2017, In : Journal of microelectromechanical systems. 26, 6, p. 1428-1434

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)
1 Downloads (Pure)
2016

CMOS-compatible PureGaB Ge-on-Si APD pixel arrays

Sammak, A., Aminian, M., Nanver, L. K. & Charbon, E., 1 Jan 2016, In : IEEE transactions on electron devices. 63, 1, p. 92-99 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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6 Citations (Scopus)
63 Downloads (Pure)

Silicon drift detectors with the drift field induced by pureB-coated trenches

Nanver, L. K., Kneževi´c, T. & Suligoj, T., 29 Oct 2016, In : Photonics. 3, 54, p. 1-18 18 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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4 Citations (Scopus)
38 Downloads (Pure)
2015

Boron-doped silicon surfaces from B2H6 passivated by ALD Al2O3 for solar cells

Mok, K. R. C. C., van de Loo, B. W. H., Vlooswijk, A. H. G., Kessels, W. M. M. E. & Nanver, L. K., 1 Sep 2015, In : IEEE journal of photovoltaics. 5, 5, p. 1310-1318 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
1 Downloads (Pure)

Conductance along the interface formed by 400 �C pure boron deposition on silicon

Qi, L. & Nanver, L. K., 1 Feb 2015, In : IEEE electron device letters. 36, 2, p. 102-104 3 p., 6998818.

Research output: Contribution to journalArticleAcademicpeer-review

19 Citations (Scopus)

Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

Dutta, S., Hueting, R. J. E., Annema, A. J., Qi, L., Nanver, L. K. & Schmitz, J., 18 Sep 2015, In : Journal of Applied Physics. 118, p. 1-10 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)

PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

Qi, L., Sluyterman, S., Kooijman-van Dijk, A. L., Mok, K. R. C. & Nanver, L. K., 1 Feb 2015, In : Optics letters. 40, 3, p. 300-303 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Restricted-access al-mediated material transport in al contacting of pureGaB Ge-on-Si p+n diodes

Sammak, A., Qi, L. & Nanver, L. K., Dec 2015, In : Journal of electronic materials. 44, 12, p. 4676-4683 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
1 Citation (Scopus)
64 Downloads (Pure)

Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

Mok, K. R. C., Qi, L., Vlooswijk, A. H. G. & Nanver, L. K., 11 Jun 2015, In : Solid-state electronics. 111, p. 210-217 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Silicon-based technology for integrated waveguides and mm-Wave systems

Jovanovic, V., Gentile, G., Dekker, R., de Graaf, P., de Vreede, L. C. N., Nanver, L. K. & Spirito, M., 1 Oct 2015, In : IEEE transactions on electron devices. 62, 10, p. 3153-3159 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)
2014

Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Evseev, S. B., Nanver, L. K., Rejaei, B. & Milosavljević, S., 1 Aug 2014, In : Microelectronic engineering. 125, p. 2-7 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Nanver, L. K., Qi, L., Mohammadi, V., Mok, K. R. M., De Boer, W. B., Golshani, N., Sammak, A., Scholtes, T. L. M., Gottwald, A., Kroth, U. & Scholze, F., 1 Jan 2014, In : IEEE Journal on Selected Topics in Quantum Electronics. 20, 6, 6805604.

Research output: Contribution to journalArticleAcademicpeer-review

35 Citations (Scopus)

Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO2 surfaces

Mohammadi, V., Golshani, N., Mok, K. R. C., De Boer, W. B., Derakhshandeh, J. & Nanver, L. K., 1 Aug 2014, In : Microelectronic engineering. 125, p. 45-50 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)

UV-sensitive low dark-count pureb single-photon avalanche diode

Qi, L., Mok, K. R. C., Aminian, M., Charbon, E. & Nanver, L. K., 1 Nov 2014, In : IEEE transactions on electron devices. 61, 11, p. 3768-3774 7 p., 6894558.

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)
2013

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Sakic, A., Qi, L., Scholtes, T. L. M., Van Der Cingel, J. & Nanver, L. K., 1 Jun 2013, In : Solid-state electronics. 84, p. 65-73 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Effects of annealing on chemical-vapor deposited PureB layers

Mok, K. R. C., Vlooswijk, A. H. G., Mohammadi, V. & Nanver, L. K., 15 Nov 2013, In : ECS journal of solid state science and technology. 2, 9

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Silicon-Filled rectangular waveguides and frequency scanning antennas for mm-Wave integrated systems

Gentile, G., Jovanović, V., Pelk, M. J., Jiang, L., Dekker, R., De Graaf, P., Rejaei, B., De Vreede, L. C. N., Nanver, L. K. & Spirito, M., 1 Jan 2013, In : IEEE transactions on antennas and propagation. 61, 12, p. 5893-5901 9 p., 6595616.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)

Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental environment

Shi, L., Nihtianov, S., Nanver, L. K. & Scholze, F., 16 Apr 2013, In : IEEE sensors journal. 13, 5, p. 1699-1707 9 p., 6387252.

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

VUV/Low-energy electron si photodiodes with postmetal 400°C pureb deposition

Mohammadi, V., Qi, L., Golshani, N., Mok, C. K. R., de Boer, W., Sammak, A., Derakhshandeh, J., van der Cingel, J. & Nanver, L. K., 1 Dec 2013, In : IEEE electron device letters. 34, 12, p. 1545-1547 3 p., 6651737.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)
2012

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 1 Dec 2012, In : Journal of Applied Physics. 112, 11, 113501.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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18 Citations (Scopus)
15 Downloads (Pure)

Electrical and optical performance investigation of si-based ultrashallow-junction p +-n VUV/EUV photodiodes

Shi, L., Nihtianov, S., Xia, S., Nanver, L. K., Gottwald, A. & Scholze, F., 1 May 2012, In : IEEE transactions on instrumentation and measurement. 61, 5, p. 1268-1277 10 p., 6163408.

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

High-efficiency silicon photodiode detector for sub-keV electron microscopy

Sakic, A., van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T. L. M., de Boer, W. B., Derakhshandeh, J., Wien, W. H. A., Milosavljevic, S. & Nanver, L. K., 15 Aug 2012, In : IEEE transactions on electron devices. 59, 10, p. 2707-2714 8 p., 6261542.

Research output: Contribution to journalArticleAcademicpeer-review

23 Citations (Scopus)

Lateral-Transistor Test Structures for Evaluating the Effectiveness of Surface Doping Techniques

Qi, L., Lorito, G. & Nanver, L. K., 1 Jan 2012, In : IEEE Transactions on Semiconductor Manufacturing. 25, 4, p. 581-588 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Pattern dependency and loading effect of pure-boron-layer chemical-vapor deposition

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M. & Nanver, L. K., 1 Dec 2012, In : ECS journal of solid state science and technology. 1, 1

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)

PureGaB p +n Ge diodes grown in large windows to Si with a sub-300 nm transition region

Sammak, A., Qi, L., de Boer, W. B. & Nanver, L. K., 1 Aug 2012, In : Solid-state electronics. 74, p. 126-133 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

Shi, L., Nihtianov, S., Haspeslagh, L., Scholze, F., Gottwald, A. & Nanver, L. K., 29 Aug 2012, In : IEEE transactions on electron devices. 59, 11, p. 2888-2894 7 p., 6280660.

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)

Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates

Evseev, S. B., Nanver, L. K. & Milosaviljevic, S., 1 Jan 2012, In : IEEE transactions on microwave theory and techniques. 60, 11, p. 3542-3550 9 p., 6341879.

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Mohammadi, V., De Boer, W. B. & Nanver, L. K., 10 Sep 2012, In : Applied physics letters. 101, 11, 111906.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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19 Citations (Scopus)
13 Downloads (Pure)
2011

Analysis of electrothermal effects in bipolar differential pairs

D'Alessandro, V., La Spina, L., Nanver, L. K. & Rinaldi, N., 1 Apr 2011, In : IEEE transactions on electron devices. 58, 4, p. 966-978 13 p., 5725176.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Sakic, A., Scholtes, T. L. M., De Boer, W., Golshani, N., Derakhshandeh, J. & Nanver, L. K., 1 Dec 2011, In : Materials. 4, 12, p. 2092-2107 16 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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5 Citations (Scopus)
7 Downloads (Pure)

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Šakić, A., Nanver, L. K., Scholtes, T. L. M., Heerkens, C. T. H., Knežević, T., Veen, G. V., Kooijman, K. & Vogelsang, P., 1 Nov 2011, In : Solid-state electronics. 65-66, 1, p. 38-44 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Integration of MOSFETs with SiGe dots as stressor material

Nanver, L. K., Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J. J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O. G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., Van Der Cingel, J. & Bonera, E., Jun 2011, In : Solid-state electronics. 60, 1, p. 75-83 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Biasotto, C., Gonda, V., Nanver, L. K., Scholtes, T. L. M., Van Der Cingel, J., Vidal, D. & Jovanović, V., 1 Nov 2011, In : Journal of electronic materials. 40, 11, p. 2187-2196 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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3 Downloads (Pure)

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Hrauda, N., Zhang, J., Wintersberger, E., Etzelstorfer, T., Mandl, B., Stangl, J., Carbone, D., Holý, V., Jovanović, V., Biasotto, C., Nanver, L. K., Moers, J., Grützmacher, D. & Bauer, G., 13 Jul 2011, In : Nano letters. 11, 7, p. 2875-2880 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

50 Citations (Scopus)
2010

Chemical vapor deposition of α-boron layers on silicon for controlled nanometer-deep p + n junction formation

Sarubbi, F., Scholtes, T. L. M. & Nanver, L. K., 1 Feb 2010, In : Journal of electronic materials. 39, 2, p. 162-173 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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65 Citations (Scopus)
3 Downloads (Pure)

C-V profiling of ultra-shallow junctions using step-like background profiles

Popadić, M., Milovanović, V., Xu, C., Sarubbi, F. & Nanver, L. K., 1 Sep 2010, In : Solid-state electronics. 54, 9, p. 890-896 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

High effective gummel number of CVD boron layers in ultrashallow p +n diode configurations

Sarubbi, F., Nanver, L. K. & Scholtes, T. L. M., 1 Jun 2010, In : IEEE transactions on electron devices. 57, 6, p. 1269-1278 10 p., 5447662.

Research output: Contribution to journalArticleAcademicpeer-review

40 Citations (Scopus)

Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis

Russo, S., La Spina, L., D'Alessandro, V., Rinaldi, N. & Nanver, L. K., Aug 2010, In : Solid-state electronics. 54, 8, p. 745-753 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II - Dynamic analysis

Russo, S., La Spina, L., D'Alessandro, V., Rinaldi, N. & Nanver, L. K., Aug 2010, In : Solid-state electronics. 54, 8, p. 754-762 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

N-channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Jovanovic, V., Biasotto, C., Nanver, L. K., Moers, J., Grutzmacher, D., Gerharz, J., Mussler, G., Van Der Cingel, J., Zhang, J. J., Bauer, G., Schmidt, O. G. & Miglio, L., Oct 2010, In : IEEE electron device letters. 31, 10, p. 1083-1085 3 p., 5557748.

Research output: Contribution to journalArticleAcademicpeer-review

38 Citations (Scopus)

Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

Shi, L., Sarubbi, F., Nanver, L. K., Kroth, U., Gottwald, A. & Nihtianov, S., 1 Jan 2010, In : Procedia engineering. 5, p. 633-636 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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25 Citations (Scopus)
5 Downloads (Pure)

Thermal budget considerations for excimer laser annealing of implanted dopants

Gonda, V., Venturini, J., Sabatier, C., Van Der Cingel, J. & Nanver, L. K., 1 Mar 2010, In : Journal of optoelectronics and advanced materials. 12, 3, p. 466-469 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
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2 Citations (Scopus)
15 Downloads (Pure)

Thermal design of multifinger bipolar transistors

La Spina, L., D'Alessandro, V., Russo, S. & Nanver, L. K., 1 Aug 2010, In : IEEE transactions on electron devices. 57, 8, p. 1789-1800 12 p., 5487380.

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Ultra-high aspect-ratio FinFET technology

Jovanović, V., Suligoj, T., Poljak, M., Civale, Y. & Nanver, L. K., 1 Sep 2010, In : Solid-state electronics. 54, 9, p. 870-876 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)