1980 …2019
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Research Output 1980 2019

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Conference article
2014
2 Citations (Scopus)

Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents

Sammak, A., Aminian, M., Qi, L., De Boer, W. B., Charbon, E. & Nanver, L. K., 1 Jan 2014, In : ECS transactions. 64, 6, p. 737-745 9 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Dark currents
Photodiodes
Fabrication
Diodes
Current density
2006
5 Citations (Scopus)

Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

Gonda, V., Liu, S., Scholtes, T. L. M. & Nanver, L. K., 21 Nov 2006, In : Materials Research Society Symposium Proceedings. 912, p. 173-177 5 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Sheet resistance
implantation
Capacitance
laser annealing
Annealing
1 Citation (Scopus)

Low-temperature solid-phase epitaxy of defect-free aluminum p +-doped silicon for nanoscale device applications

Civale, Y., Nanver, L. K., Hadley, P., Goudena, E. J. G., Van Zeijl, H. W. & Schellevis, H., 1 Dec 2006, In : Materials Research Society Symposium Proceedings. 940, p. 1-6 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Silicon
Aluminum
Epitaxial growth
epitaxy
solid phases
1 Citation (Scopus)

Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

Popadić, M., Sarubbi, F., Scholtes, T. L. M. & Nanver, L. K., 1 Dec 2006, In : ECS transactions. 4, 1, p. 393-399 7 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Surface segregation
Arsenic
Partial pressure
Silicon
Deposition rates
2003
18 Citations (Scopus)

Design and characterization of integrated passive elements on high ohmic silicon̈

Valletta, E., Van Beek, J., Den Dekker, A., Pulsford, N., Jos, H. F. F., De Vreede, L. C. N., Nanver, L. K. & Burghartz, J. N., 18 Aug 2003, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 1235-1238 4 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Coplanar waveguides
waveguides
Silicon
silicon
2001

A low-cost BiCMOS process with metal gates

Van Zeijl, H. W. & Nanver, L. K., 1 Jan 2001, In : Materials Research Society Symposium - Proceedings. 611

Research output: Contribution to journalConference articleAcademicpeer-review

CMOS
Metals
metals
Costs
simplification

Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

Van Dijk, B. D., Van Der Wilt, P. C., Bertens, G. J., Nanver, L. K. & Ishihara, R., 1 Dec 2001, In : Materials Research Society symposia proceedings. 685, p. 299-304 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Excimer lasers
Thin film transistors
Crystallization
excimer lasers
transistors
2000
3 Citations (Scopus)

Annealing experiments on supercritical Si1-x Gex layers grown by RPCVD

Grimm, K., Vescan, L., Visser, C. C. G., Nanver, L. K. & Lüth, H., 19 Jan 2000, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 69-70, p. 261-265 5 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Chemical vapor deposition
vapor deposition
Annealing
annealing
Experiments
8 Citations (Scopus)
6 Downloads (Pure)

Backwafer optical lithography and wafer distortion in substrate transfer technologies

van Zeijl, H. W., Slabbekoorn, J., Nanver, L. K., van Dijk, P. W. L., Berthold, A. & Machielsen, T., 18 Aug 2000, In : Proceedings of SPIE - the international society for optical engineering. 4181, 1, p. 200-207 8 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Open Access
File
technology transfer
Technology Transfer
Optical Lithography
Technology transfer
Photolithography

Ionizing-radiation induced degradation of SiGe HBTs

Topkar, A., Lodha, S., Mahfooz, A. T., Vasi, J., LaL, R. & Nanver, L., 1 Jan 2000, In : Proceedings of SPIE - the international society for optical engineering. 3975

Research output: Contribution to journalConference articleAcademicpeer-review

SiGe
Ionizing radiation
Heterojunction bipolar transistors
ionizing radiation
Degradation
1998
3 Citations (Scopus)

Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

Visser, C. C. G., Nanver, L. K. & van den Bogaard, A., 1998, In : Materials Research Society Symposium - Proceedings. 533, p. 105-110 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Boron
Heterojunction bipolar transistors
accumulators
Phosphorus
phosphorus

Radiation-induced degradation of bipolar transistors

Topkar, A., Mathew, T., Lal, R., Vasi, J. & Nanver, L., 1 Dec 1998, In : Proceedings of SPIE - the international society for optical engineering. 3316, 1, p. 686-689 4 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Bipolar transistors
bipolar transistors
Degradation
Radiation
degradation