1980 …2020

Research output per year

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Research Output

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Conference article
2014

Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents

Sammak, A., Aminian, M., Qi, L., De Boer, W. B., Charbon, E. & Nanver, L. K., 1 Jan 2014, In : ECS transactions. 64, 6, p. 737-745 9 p.

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)
2006

Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

Gonda, V., Liu, S., Scholtes, T. L. M. & Nanver, L. K., 21 Nov 2006, In : Materials Research Society Symposium Proceedings. 912, p. 173-177 5 p.

Research output: Contribution to journalConference articleAcademicpeer-review

5 Citations (Scopus)

Low-temperature solid-phase epitaxy of defect-free aluminum p +-doped silicon for nanoscale device applications

Civale, Y., Nanver, L. K., Hadley, P., Goudena, E. J. G., Van Zeijl, H. W. & Schellevis, H., 1 Dec 2006, In : Materials Research Society Symposium Proceedings. 940, p. 1-6 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)

Versatile N-type profile engineering by controlling arsenic surface segregation in silicon RPCVD

Popadić, M., Sarubbi, F., Scholtes, T. L. M. & Nanver, L. K., 1 Dec 2006, In : ECS transactions. 4, 1, p. 393-399 7 p.

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)
2003

Design and characterization of integrated passive elements on high ohmic silicon̈

Valletta, E., Van Beek, J., Den Dekker, A., Pulsford, N., Jos, H. F. F., De Vreede, L. C. N., Nanver, L. K. & Burghartz, J. N., 18 Aug 2003, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 1235-1238 4 p.

Research output: Contribution to journalConference articleAcademicpeer-review

18 Citations (Scopus)
2001

A low-cost BiCMOS process with metal gates

Van Zeijl, H. W. & Nanver, L. K., 1 Jan 2001, In : Materials Research Society Symposium - Proceedings. 611

Research output: Contribution to journalConference articleAcademicpeer-review

Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

Van Dijk, B. D., Van Der Wilt, P. C., Bertens, G. J., Nanver, L. K. & Ishihara, R., 1 Dec 2001, In : Materials Research Society symposia proceedings. 685, p. 299-304 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

2000

Annealing experiments on supercritical Si1-x Gex layers grown by RPCVD

Grimm, K., Vescan, L., Visser, C. C. G., Nanver, L. K. & Lüth, H., 19 Jan 2000, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 69-70, p. 261-265 5 p.

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)

Backwafer optical lithography and wafer distortion in substrate transfer technologies

van Zeijl, H. W., Slabbekoorn, J., Nanver, L. K., van Dijk, P. W. L., Berthold, A. & Machielsen, T., 18 Aug 2000, In : Proceedings of SPIE - the international society for optical engineering. 4181, 1, p. 200-207 8 p.

Research output: Contribution to journalConference articleAcademicpeer-review

Open Access
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8 Citations (Scopus)
16 Downloads (Pure)

Ionizing-radiation induced degradation of SiGe HBTs

Topkar, A., Lodha, S., Mahfooz, A. T., Vasi, J., LaL, R. & Nanver, L., 1 Jan 2000, In : Proceedings of SPIE - the international society for optical engineering. 3975

Research output: Contribution to journalConference articleAcademicpeer-review

1998

Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

Visser, C. C. G., Nanver, L. K. & van den Bogaard, A., 1998, In : Materials Research Society Symposium - Proceedings. 533, p. 105-110 6 p.

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)

Radiation-induced degradation of bipolar transistors

Topkar, A., Mathew, T., Lal, R., Vasi, J. & Nanver, L., 1 Dec 1998, In : Proceedings of SPIE - the international society for optical engineering. 3316, 1, p. 686-689 4 p.

Research output: Contribution to journalConference articleAcademicpeer-review