Marcel J M Pelgrom

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2001

Integrated Circuit with a Non-Volatile MOS RAM Cell
Pelgrom, M. J. M., Widdershoven, F. P., Annema, A. J. & Storms, M., 10 Oct 2001, (In preparation) Patent No. EP1141961, Priority date 10 Oct 2001
Research output: Patent
Integrated Circuit with a Non-Volatile MOS RAM Cell
Widdershoven, F. P., Annema, A. J., Storms, M. & Pelgrom, M. J. M., 12 Apr 2001, (In preparation) Patent No. WO-0126113, Priority date 12 Apr 2001
Research output: Patent
Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanance programmes information in the cell of a non-volatile one
Pelgrom, M. J. M., Widdershoven, F. P., Annema, A. J. & Storms, M., 18 Dec 2001, (Submitted) Patent No. US 6331947, Priority date 18 Dec 2001
Research output: Patent
Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell of a non-volatile one
Widdershoven, F. P., Annema, A. J., Storms, M. M. N. & Pelgrom, M. J. M., 18 Dec 2001, (Accepted/In press) Patent No. US6,331,947
Research output: Patent

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