Moritz Nunnenkamp

Internal PhD Candidate, Inorganic Materials Science
Internal PhD Candidate, MESA+ Institute

Source: Scopus
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1 Conference contribution

Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors
Zhou, R., Li, L., Zhao, W., Liao, Z., Nguyen, M. D., Nunnenkamp, M., Houwman, E. P., Koster, G., Rijnders, A. J. H. M., Gravesteijn, D. J. & Hueting, R. J. E., Sep 2020, Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. IEEE, p. 329-332 4 p. 9170173. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2020-September).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
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Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors