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Fingerprint Dive into the research topics where Raymond Josephus Engelbart Hueting is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 6 Similar Profiles
Silicon Chemical Compounds
avalanches Physics & Astronomy
Light emitting diodes Engineering & Materials Science
Diodes Engineering & Materials Science
CMOS Physics & Astronomy
light emitting diodes Physics & Astronomy
Ferroelectric materials Engineering & Materials Science
Transistors Engineering & Materials Science

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Research Output 1997 2019

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gupta, G., Tharnmaiah, S. D., Hueting, R. J. E. & Nanver, L. K., 6 Jun 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, p. 12-17 6 p. 8730920

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Molybdenum oxide
Inversion layers
Palladium
Diodes
Silicon
2 Citations (Scopus)
114 Downloads (Pure)

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Gupta, G., Banerjee, S., Dutta, S., Aarnink, A. A. I., Schmitz, J., Kovalgin, A. Y. & Hueting, R. J. E., 28 Aug 2018, In : Journal of applied physics. 124, 8, 8 p., 084503.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
electroluminescence
heterojunctions
charge carriers
diodes
traps
3 Citations (Scopus)
34 Downloads (Pure)

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Agarwal, V., Annema, A-J., Hueting, R. J. E., Dutta, S., Nanver, L. K. & Nauta, B., 1 Nov 2018, In : IEEE transactions on electron devices. 65, 11, p. 4883-4890 8 p., 8472882.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Silicon
Data communication systems
Light emitting diodes
Jitter
Leakage currents
3 Citations (Scopus)
15 Downloads (Pure)

Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

Li, L., Liao, Z., Gauquelin, N., Nguyen, M. D., Hueting, R. J. E., Gravesteijn, D. J., Lobato, I., Houwman, E. P., Lazar, S., Verbeeck, J., Koster, G. & Rijnders, G., 23 Jan 2018, In : Advanced materials interfaces. 5, 2, 1700921.

Research output: Contribution to journalArticleAcademicpeer-review

Gallium nitride
Ferroelectric materials
Substrates
Epitaxial growth
Strain relaxation
1 Downloads (Pure)

Figures of merit of avalanche-mode silicon LEDS

Hueting, R. J. E., Dutta, S., Agarwal, V. & Annema, A. J., 8 Oct 2018, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 2018, Skuluza, South Africa. SPIE International, Vol. 11043.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

figure of merit
avalanches
light emitting diodes
CMOS
silicon

Activities 2017 2017

  • 1 Invited talk

Optocouplers in CMOS for smart power

Satadal Dutta (Speaker), Vishal Vishal Agarwal (Contributor), Anne J. Annema (Contributor), Raymond Josephus Engelbart Hueting (Invited speaker), Jurriaan Schmitz (Contributor)
29 May 2017

Activity: Talk or presentationInvited talk