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Research Output 1997 2019

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Article
2018
1 Citation (Scopus)
106 Downloads (Pure)

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Gupta, G., Banerjee, S., Dutta, S., Aarnink, A. A. I., Schmitz, J., Kovalgin, A. Y. & Hueting, R. J. E., 28 Aug 2018, In : Journal of applied physics. 124, 8, 8 p., 084503.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
electroluminescence
heterojunctions
charge carriers
diodes
traps
3 Citations (Scopus)
32 Downloads (Pure)

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Agarwal, V., Annema, A-J., Hueting, R. J. E., Dutta, S., Nanver, L. K. & Nauta, B., 1 Nov 2018, In : IEEE transactions on electron devices. 65, 11, p. 4883-4890 8 p., 8472882.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Silicon
Data communication systems
Light emitting diodes
Jitter
Leakage currents
3 Citations (Scopus)
14 Downloads (Pure)

Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

Li, L., Liao, Z., Gauquelin, N., Nguyen, M. D., Hueting, R. J. E., Gravesteijn, D. J., Lobato, I., Houwman, E. P., Lazar, S., Verbeeck, J., Koster, G. & Rijnders, G., 23 Jan 2018, In : Advanced materials interfaces. 5, 2, 1700921.

Research output: Contribution to journalArticleAcademicpeer-review

Gallium nitride
Ferroelectric materials
Substrates
Epitaxial growth
Strain relaxation
1 Citation (Scopus)
1 Downloads (Pure)

Minority Carrier Injection in High-Barrier Si-Schottky Diodes

Gupta, G., Dutta, S., Banerjee, S. & Hueting, R. J. E., 1 Apr 2018, In : IEEE transactions on electron devices. 65, 4, p. 1276-1282 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Silicon
Diodes
Thermionic emission
Schottky barrier diodes
Carrier transport
2 Citations (Scopus)
41 Downloads (Pure)

Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

Agarwal, V., Annema, A. J., Dutta, S., Hueting, R. J. E., Nanver, L. K. & Nauta, B., 10 May 2018, In : Journal of the Electron Devices Society. 6, 1, p. 642-652 11 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Avalanches
Avalanche diodes
Telegraph
Silicon
Defects
1 Citation (Scopus)
10 Downloads (Pure)

The balancing act in ferroelectric transistors: how hard can it be?

Hueting, R. J. E., 7 Nov 2018, In : Micromachines. 9, 11, 14 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Field effect transistors
Ferroelectric materials
Transistors
Capacitance
Polarization
1 Citation (Scopus)
15 Downloads (Pure)

Toward GHz Switching in SOI Light Emitting Diodes

Puliyankot, V., Piccolo, G., Hueting, R. J. E. & Schmitz, J., 10 Sep 2018, In : IEEE transactions on electron devices. 65, 10, p. 4413-4420 8 p., 8457503.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Light emitting diodes
Light emission
Silicon
Diodes
Geometry
2017
3 Citations (Scopus)
1 Downloads (Pure)

An improved analytical model for carrier multiplication near breakdown in diodes

Hueting, R. J. E., Heringa, A., Boksteen, B. K., Dutta, S., Ferrara, A., Agarwal, V. V. & Annema, A. J., 13 Jan 2017, In : IEEE transactions on electron devices. 64, 1, p. 264-270 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Ionization
Analytical models
Diodes
Charge carriers
Impact ionization
1 Citation (Scopus)

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

Hajlasz, M., Donkers, J. J. T. M., Pandey, S., Hurkx, F., Hueting, R. J. E. & Gravesteijn, D. J., 1 Oct 2017, In : IEEE transactions on electron devices. 64, 10, p. 4050-4056 7 p., 8019820.

Research output: Contribution to journalArticleAcademicpeer-review

Chemical reactions
Diodes
Metals
Silicon
Spectroscopy
16 Citations (Scopus)
1 Downloads (Pure)

Electrostatic Doping in Semiconductor Devices

Gupta, G., Rajasekharan, B. & Hueting, R. J. E., 23 Jun 2017, In : IEEE transactions on electron devices. 64, 8, p. 3044-3055 12 p.

Research output: Contribution to journalArticleAcademicpeer-review

Semiconductor devices
Electrostatics
Doping (additives)
Energy gap
Metals
4 Citations (Scopus)
47 Downloads (Pure)

Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

Agarwal, V. V., Dutta, S., Annema, A. J., Hueting, R. J. E., Steeneken, P. G. & Nauta, B., 24 Jul 2017, In : Optics express. 25, 15, p. 16981-16995 14 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
SOI (semiconductors)
avalanches
transmitters
optical spectrum
CMOS
12 Citations (Scopus)
51 Downloads (Pure)

Monolithic optical link in silicon-on-insulator CMOS technology

Dutta, S., Agarwal, V. V., Hueting, R. J. E., Schmitz, J. & Annema, A. J., 6 Mar 2017, In : Optics express. 25, 5, p. 5440-5456 17 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
CMOS
light emitting diodes
insulators
avalanches
photodiodes
3 Citations (Scopus)
4 Downloads (Pure)

Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS

Dutta, S., Wienk, G. J. M., Hueting, R. J. E., Schmitz, J. & Annema, A. J., 23 Jun 2017, In : IEEE electron device letters. 38, 7, p. 898-901 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Silicon
Electric breakdown
Light emitting diodes
Electroluminescence
Spatial distribution
6 Citations (Scopus)
31 Downloads (Pure)

The avalanche-mode superjunction LED

Dutta, S., Steeneken, P. G., Agarwal, V. V., Schmitz, J., Annema, A. J. & Hueting, R. J. E., Apr 2017, In : IEEE transactions on electron devices. 64, 4, p. 1612-1618 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Open Access
File
Light emitting diodes
Silicon
Electric fields
Optical links
Photodiodes
2016
1 Citation (Scopus)

Interface trap density estimation in FinFETs using the gm/ID Method in the subthreshold regime

Boksteen, B. K., Schmitz, J. & Hueting, R. J. E., May 2016, In : IEEE transactions on electron devices. 63, 5, p. 1814-1820 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

2015
3 Citations (Scopus)

Electric field and interface charge extraction in field-plate assisted RESURF devices

Boksteen, B. K., Heringa, A., Ferrara, A., Steeneken, P. G., Schmitz, J. & Hueting, R. J. E., 1 Feb 2015, In : IEEE transactions on electron devices. 62, 2, p. 622-629 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

Kamerbeek, A. M., Banerjee, T. & Hueting, R. J. E., 15 Dec 2015, In : Journal of applied physics. 118, 225704, p. 1-5 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Ideal RESURF Geometries

Ferrara, A., Boksteen, B. K., Hueting, R. J. E., Heringa, A., Schmitz, J. & Steeneken, P. G., 1 Oct 2015, In : IEEE transactions on electron devices. 62, 10, p. 3341-3347 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers

Elibol, K., Elibol, K., Nguyen, D. M., Hueting, R. J. E., Gravesteijn, D. J., Koster, G., Koster, G. & Rijnders, A. J. H. M., 30 Jul 2015, In : Thin solid films. 591, Part A, p. 66-71 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)
244 Downloads (Pure)

On device architectures, subthreshold swing, and power consumption of the piezoelectric field-effect transistor (π-FET)

Hueting, R. J. E., van Hemert, T., Kaleli, B., Wolters, R. A. M. & Schmitz, J., 22 Apr 2015, In : Journal of the Electron Devices Society. 3, 3, p. 149-157 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
19 Citations (Scopus)

Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

Dutta, S., Hueting, R. J. E., Annema, A. J., Qi, L., Nanver, L. K. & Schmitz, J., 18 Sep 2015, In : Journal of applied physics. 118, p. 1-10 10 p.

Research output: Contribution to journalArticleAcademicpeer-review

Physics-based stability analysis of MOS transistors

Ferrara, A., Steeneken, P. G., Boksteen, B. K., Heringa, A., Scholten, A. J., Schmitz, J. & Hueting, R. J. E., 10 Jun 2015, In : Solid-state electronics. 113, p. 28-34 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Transistors
transistors
Physics
physics
failure analysis
2014
8 Citations (Scopus)

Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode

Kaleli, B., Nguyen, D. M., Schmitz, J., Wolters, R. A. M. & Hueting, R. J. E., 1 May 2014, In : Microelectronic engineering. 119, p. 16-19 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

Titanium nitride
titanium nitrides
Leakage currents
Ferroelectric materials
Thin films
2 Citations (Scopus)

Impact of interface charge on the electrostatics of field-plate assisted RESURF devices

Boksteen, B. K., Ferrara, A., Heringa, A., Steeneken, P. G. & Hueting, R. J. E., 30 Jun 2014, In : IEEE transactions on electron devices. 61, 8, p. 2859-2866 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Integration of a Piezoelectric Layer on Si FinFETs for Tunable Strained Device Applications

Kaleli, B., Hueting, R. J. E., Nguyen, D. M. & Wolters, R. A. M., 1 Jun 2014, In : IEEE transactions on electron devices. 61, 6, p. 1929-1935 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

Piezoelectricity
Silicon
Electron mobility
Oxides
FinFET

Opportunities for shear energy scaling in bulk acoustic wave resonators

Jose, S. & Hueting, R. J. E., 1 Oct 2014, In : IEEE transactions on ultrasonics, ferroelectrics and frequency control. 61, 10, p. 1720-1728 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

2013
15 Citations (Scopus)

Piezoelectric strain modulation in FETs

van Hemert, T. & Hueting, R. J. E., 10 Oct 2013, In : IEEE transactions on electron devices. 60, 10, p. 3265-3270 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

Field effect transistors
Modulation
Threshold voltage
Leakage currents
Transistors
3 Citations (Scopus)

Strain and conduction-band offset in narrow n-type finFETs

van Hemert, T., Kaleli, B., Hueting, R. J. E., Esseni, D., van Dal, M. J. H. & Schmitz, J., 1 Mar 2013, In : IEEE transactions on electron devices. 60, 3, p. 1005-1010 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

2012
6 Citations (Scopus)

Extraction of second order piezoelectric parameters in bulk acoustic wave resonators

van Hemert, T., Reimann, K. & Hueting, R. J. E., 5 Jun 2012, In : Applied physics letters. 100, 23, p. 232901:1-232901:4 4 p.

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

One-Dimensional Physical Model to Predict the Internal Quantum Efficiency of Si-Based LEDs

Puliyankot Palackavalapil, V. & Hueting, R. J. E., 1 Jan 2012, In : IEEE transactions on electron devices. 59, 1, p. 26-34 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

Quantum efficiency
Light emitting diodes
Heterojunctions
Energy gap
Analytical models
2010
4 Citations (Scopus)

BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substrates

Tiggelman, M. P. J., Reimann, K., Klee, M., Mauczok, R., Keur, W. & Hueting, R. J. E., 1 Mar 2010, In : Thin solid films. 518, 10, p. 2854-2959 106 p.

Research output: Contribution to journalArticleAcademicpeer-review

Aluminum Oxide
Barium strontium titanate
barium
capacitors
Capacitors
111 Citations (Scopus)
139 Downloads (Pure)

Fabrication and characterization of the charge-plasma diode

Rajasekharan, B., Hueting, R. J. E., Salm, C., van Hemert, T., Wolters, R. A. M. & Schmitz, J., 1 Jun 2010, In : IEEE electron device letters. 31, 6, p. 528-530 3 p., 10.1109/LED.2010.2045731.

Research output: Contribution to journalArticleAcademicpeer-review

File
8 Citations (Scopus)
249 Downloads (Pure)

Optimized reflector stacks for solidly mounted bulk acoustic wave resonators

Jose, S., Jansman, A. B. M., Hueting, R. J. E. & Schmitz, J., 1 Dec 2010, In : IEEE transactions on ultrasonics, ferroelectrics and frequency control. 57, 12, p. 2753-2763 11 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
2009
5 Citations (Scopus)
44 Downloads (Pure)

Extracting energy band offsets on long-channel thin silicon-on-insulator MOSFETs

van der Steen, J. P. J., Hueting, R. J. E. & Schmitz, J., 1 Sep 2009, In : IEEE transactions on electron devices. 56, 9, p. 1999-2007 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
24 Citations (Scopus)
110 Downloads (Pure)

On the trade-off between quality factor and tuning ratio in tunable high-frequency capacitors

Tiggelman, M. P. J., Reimann, K., van Rijs, F., Schmitz, J. & Hueting, R. J. E., 1 Sep 2009, In : IEEE transactions on electron devices. 56, 9, p. 2128-2136 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
2008
129 Citations (Scopus)
159 Downloads (Pure)

The charge plasma P-N diode

Hueting, R. J. E., Rajasekharan, B., Salm, C. & Schmitz, J., 1 Dec 2008, In : IEEE electron device letters. 29, 412/12, p. 1367-1369 3 p., 10.1109/LED.2008.2006864.

Research output: Contribution to journalArticleAcademicpeer-review

File
2007
4 Citations (Scopus)

Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs

van der Steen, J. P. J., Hueting, R. J. E., Smit, G. D. J., Hoang, T., Holleman, J. & Schmitz, J., 1 Sep 2007, In : IEEE electron device letters. 28, LNCS4549/9, p. 821-824 4 p., 10.1109/LED.2007.903390.

Research output: Contribution to journalArticleAcademicpeer-review

34 Citations (Scopus)
30 Downloads (Pure)

Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations

van der Steen, J. P. J., Esseni, D., Palestri, P., Selmi, L. & Hueting, R. J. E., 1 Aug 2007, In : IEEE transactions on electron devices. 54, LNCS4549/8, p. 1843-1851 9 p., 10.1109/TED.2007.900417.

Research output: Contribution to journalArticleAcademicpeer-review

File
2006
20 Citations (Scopus)
88 Downloads (Pure)

Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs

Hueting, R. J. E. & Heringa, A., 7 Jul 2006, In : IEEE transactions on electron devices. 53, 2/7, p. 1641-1646 6 p.

Research output: Contribution to journalArticleAcademicpeer-review

File
2005
4 Citations (Scopus)

Analysis of the Kirk effect in silicon-based bipolar transistors with a nonuniform collector profile

Hueting, R. J. E. & van der Toorn, R., 1 Nov 2005, In : IEEE transactions on electron devices. 52, 11, p. 2489-2495 7 p., 10.1109/TED.2005.857176.

Research output: Contribution to journalArticleAcademicpeer-review