1 micro meter saturable absorber mirrors with recovery time reduced by lattice mismatch

S. Suomalainen; M. Guina; T. Hakulinen; O.G. Okhotnikov; T.G. Euser; S. Marcinkevicius

doi:10.1063/1.2337278

1 micro meter saturable absorber mirrors with recovery time reduced by lattice mismatch

S. Suomalainen, M. Guina, T. Hakulinen, O.G. Okhotnikov, T.G. Euser, S. Marcinkevicius

Complex Photonic Systems

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ∼ 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.

Original language	English
Article number	071112
Number of pages	3
Journal	Applied physics letters
Volume	89
Issue number	7
DOIs	https://doi.org/10.1063/1.2337278
Publication status	Published - 2006

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title = "1 micro meter saturable absorber mirrors with recovery time reduced by lattice mismatch",

abstract = "Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ∼ 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.",

author = "S. Suomalainen and M. Guina and T. Hakulinen and O.G. Okhotnikov and T.G. Euser and S. Marcinkevicius",

year = "2006",

doi = "10.1063/1.2337278",

language = "English",

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journal = "Applied physics letters",

issn = "0003-6951",

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T1 - 1 micro meter saturable absorber mirrors with recovery time reduced by lattice mismatch

AU - Suomalainen, S.

AU - Guina, M.

AU - Hakulinen, T.

AU - Okhotnikov, O.G.

AU - Euser, T.G.

AU - Marcinkevicius, S.

PY - 2006

Y1 - 2006

N2 - Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ∼ 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.

AB - Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ∼ 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.

U2 - 10.1063/1.2337278

DO - 10.1063/1.2337278

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied physics letters

JF - Applied physics letters

IS - 7

M1 - 071112

ER -

1 micro meter saturable absorber mirrors with recovery time reduced by lattice mismatch

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