1 micro meter saturable absorber mirrors with recovery time reduced by lattice mismatch

S. Suomalainen, M. Guina, T. Hakulinen, O.G. Okhotnikov, T.G. Euser, S. Marcinkevicius

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ∼ 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.
Original languageEnglish
Article number071112
Number of pages3
JournalApplied physics letters
Volume89
Issue number7
DOIs
Publication statusPublished - 2006

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