Abstract
Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ∼ 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.
Original language | English |
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Article number | 071112 |
Number of pages | 3 |
Journal | Applied physics letters |
Volume | 89 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2006 |