1000 dB/cm gain in Yb3+-doped double tungstates

D. Geskus, S. Aravazhi, Sonia Maria García Blanco, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic


    Rare-earth ions are impurities providing low gain, reaching ~10 dB/cm, because electronic transitions within their 4f subshell are parity forbidden, dictating low transition probabilities and cross-sections. Here we exploit the extreme inversion densities attainable in rare-earth-ion-doped microstructures in a host material, potassium double tungstate, that provides enhanced transition cross-sections and dopant concentrations, thereby demonstrating a gain of 935 dB/cm in channel- waveguide and 1028 dB/cm in thin-film geometry, comparable to the best values reported for semiconductor waveguide amplifiers. Further improvement seems feasible with larger dopant concentrations.
    Original languageUndefined
    Title of host publicationProceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter
    Place of PublicationGhent, Belgium
    PublisherGhent University
    Number of pages4
    ISBN (Print)978-90-76546-00-1
    Publication statusPublished - 1 Dec 2011
    Event16th Annual Symposium of the IEEE Photonics Benelux Chapter 2011 - Ghent, Belgium
    Duration: 1 Dec 20112 Dec 2011
    Conference number: 16

    Publication series

    PublisherDepartment of Information Technology, Ghent University


    Conference16th Annual Symposium of the IEEE Photonics Benelux Chapter 2011
    Internet address


    • METIS-285006
    • EWI-21288
    • IR-79368

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