1000 dB/cm gain in Yb3+-doped double tungstates

D. Geskus, S. Aravazhi, Sonia Maria García Blanco, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Rare-earth ions are impurities providing low gain, reaching ~10 dB/cm, because electronic transitions within their 4f subshell are parity forbidden, dictating low transition probabilities and cross-sections. Here we exploit the extreme inversion densities attainable in rare-earth-ion-doped microstructures in a host material, potassium double tungstate, that provides enhanced transition cross-sections and dopant concentrations, thereby demonstrating a gain of 935 dB/cm in channel- waveguide and 1028 dB/cm in thin-film geometry, comparable to the best values reported for semiconductor waveguide amplifiers. Further improvement seems feasible with larger dopant concentrations.
    Original languageUndefined
    Title of host publicationProceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter
    Place of PublicationGhent, Belgium
    PublisherDepartment of Information Technology, Ghent University
    Pages29-32
    Number of pages4
    ISBN (Print)978-90-76546-00-1
    Publication statusPublished - 1 Dec 2011
    Event16th Annual Symposium of the IEEE Photonics Benelux Chapter 2011 - Ghent, Belgium
    Duration: 1 Dec 20112 Dec 2011
    Conference number: 16
    http://www.photonics-benelux.org/symp11/

    Publication series

    Name
    PublisherDepartment of Information Technology, Ghent University

    Conference

    Conference16th Annual Symposium of the IEEE Photonics Benelux Chapter 2011
    CountryBelgium
    CityGhent
    Period1/12/112/12/11
    Internet address

    Keywords

    • METIS-285006
    • EWI-21288
    • IR-79368

    Cite this

    Geskus, D., Aravazhi, S., García Blanco, S. M., & Pollnau, M. (2011). 1000 dB/cm gain in Yb3+-doped double tungstates. In Proceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 29-32). Ghent, Belgium: Department of Information Technology, Ghent University.
    Geskus, D. ; Aravazhi, S. ; García Blanco, Sonia Maria ; Pollnau, Markus. / 1000 dB/cm gain in Yb3+-doped double tungstates. Proceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter. Ghent, Belgium : Department of Information Technology, Ghent University, 2011. pp. 29-32
    @inproceedings{38ff284f272543fc887107a019d3df66,
    title = "1000 dB/cm gain in Yb3+-doped double tungstates",
    abstract = "Rare-earth ions are impurities providing low gain, reaching ~10 dB/cm, because electronic transitions within their 4f subshell are parity forbidden, dictating low transition probabilities and cross-sections. Here we exploit the extreme inversion densities attainable in rare-earth-ion-doped microstructures in a host material, potassium double tungstate, that provides enhanced transition cross-sections and dopant concentrations, thereby demonstrating a gain of 935 dB/cm in channel- waveguide and 1028 dB/cm in thin-film geometry, comparable to the best values reported for semiconductor waveguide amplifiers. Further improvement seems feasible with larger dopant concentrations.",
    keywords = "METIS-285006, EWI-21288, IR-79368",
    author = "D. Geskus and S. Aravazhi and {Garc{\'i}a Blanco}, {Sonia Maria} and Markus Pollnau",
    note = "eemcs-eprint-21288",
    year = "2011",
    month = "12",
    day = "1",
    language = "Undefined",
    isbn = "978-90-76546-00-1",
    publisher = "Department of Information Technology, Ghent University",
    pages = "29--32",
    booktitle = "Proceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter",

    }

    Geskus, D, Aravazhi, S, García Blanco, SM & Pollnau, M 2011, 1000 dB/cm gain in Yb3+-doped double tungstates. in Proceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter. Department of Information Technology, Ghent University, Ghent, Belgium, pp. 29-32, 16th Annual Symposium of the IEEE Photonics Benelux Chapter 2011, Ghent, Belgium, 1/12/11.

    1000 dB/cm gain in Yb3+-doped double tungstates. / Geskus, D.; Aravazhi, S.; García Blanco, Sonia Maria; Pollnau, Markus.

    Proceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter. Ghent, Belgium : Department of Information Technology, Ghent University, 2011. p. 29-32.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - 1000 dB/cm gain in Yb3+-doped double tungstates

    AU - Geskus, D.

    AU - Aravazhi, S.

    AU - García Blanco, Sonia Maria

    AU - Pollnau, Markus

    N1 - eemcs-eprint-21288

    PY - 2011/12/1

    Y1 - 2011/12/1

    N2 - Rare-earth ions are impurities providing low gain, reaching ~10 dB/cm, because electronic transitions within their 4f subshell are parity forbidden, dictating low transition probabilities and cross-sections. Here we exploit the extreme inversion densities attainable in rare-earth-ion-doped microstructures in a host material, potassium double tungstate, that provides enhanced transition cross-sections and dopant concentrations, thereby demonstrating a gain of 935 dB/cm in channel- waveguide and 1028 dB/cm in thin-film geometry, comparable to the best values reported for semiconductor waveguide amplifiers. Further improvement seems feasible with larger dopant concentrations.

    AB - Rare-earth ions are impurities providing low gain, reaching ~10 dB/cm, because electronic transitions within their 4f subshell are parity forbidden, dictating low transition probabilities and cross-sections. Here we exploit the extreme inversion densities attainable in rare-earth-ion-doped microstructures in a host material, potassium double tungstate, that provides enhanced transition cross-sections and dopant concentrations, thereby demonstrating a gain of 935 dB/cm in channel- waveguide and 1028 dB/cm in thin-film geometry, comparable to the best values reported for semiconductor waveguide amplifiers. Further improvement seems feasible with larger dopant concentrations.

    KW - METIS-285006

    KW - EWI-21288

    KW - IR-79368

    M3 - Conference contribution

    SN - 978-90-76546-00-1

    SP - 29

    EP - 32

    BT - Proceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter

    PB - Department of Information Technology, Ghent University

    CY - Ghent, Belgium

    ER -

    Geskus D, Aravazhi S, García Blanco SM, Pollnau M. 1000 dB/cm gain in Yb3+-doped double tungstates. In Proceedings of the 2011 Annual Symposium of the IEEE Photonics Benelux Chapter. Ghent, Belgium: Department of Information Technology, Ghent University. 2011. p. 29-32