170 GBit/s transmission in an erbium-doped waveguide amplifier on silicon

Jonathan D.B. Bradley, Maria Costa e Silva, Mathilde Gay, Laurent Bramerie, Alfred Driessen, Kerstin Wörhoff, Jean-Claude Simon, Markus Pollnau

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    Signal transmission experiments were performed at 170 Gbit/s in an integrated Al2O3:Er3+ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 27-1 bit sequence.
    Original languageEnglish
    Pages (from-to)22201-22208
    Number of pages8
    JournalOptics express
    Issue number24
    Publication statusPublished - 19 Nov 2009


    • EC Grant Agreement nr.: FP6/017501


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