1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness

J.S. Kolhatkar, Cora Salm, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off��? periodically (switched bias conditions)[1]. In this work, noise measurements on p-MOSFET are reported, with gate oxide thickness varying from 2 to 20 nm, keeping the electric field in the channel constant at 1.4 MV/cm. The switched bias noise and the reduction in the switched bias noise for p-MOSFET, are investigated as a function of the gate oxide thickness and the switching amplitude. Recently reported literature[2] on explanation for switched biased noise reduction is then compared with our measurement results and some explanations are proposed.
    Original languageEnglish
    Title of host publicationProceedings of the SAFE Conference
    Pages92-95
    Number of pages4
    Publication statusPublished - 2001
    Event4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands
    Duration: 28 Nov 200130 Nov 2001

    Workshop

    Workshop4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
    CountryNetherlands
    CityVeldhoven
    Period28/11/0130/11/01

    Keywords

    • switched bias
    • 1/f noise
    • EWI-15630
    • MOSFET LF noise
    • noise reduction
    • p-MOSFET
    • IR-67781

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  • Cite this

    Kolhatkar, J. S., Salm, C., & Wallinga, H. (2001). 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. In Proceedings of the SAFE Conference (pp. 92-95)