1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness

J.S. Kolhatkar, Cora Salm, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off��? periodically (switched bias conditions)[1]. In this work, noise measurements on p-MOSFET are reported, with gate oxide thickness varying from 2 to 20 nm, keeping the electric field in the channel constant at 1.4 MV/cm. The switched bias noise and the reduction in the switched bias noise for p-MOSFET, are investigated as a function of the gate oxide thickness and the switching amplitude. Recently reported literature[2] on explanation for switched biased noise reduction is then compared with our measurement results and some explanations are proposed.
    Original languageEnglish
    Title of host publicationProceedings of the SAFE Conference
    Pages92-95
    Number of pages4
    Publication statusPublished - 2001
    Event4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands
    Duration: 28 Nov 200130 Nov 2001

    Workshop

    Workshop4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
    CountryNetherlands
    CityVeldhoven
    Period28/11/0130/11/01

    Fingerprint

    noise measurement
    field effect transistors
    noise reduction
    oxides
    transistors
    low frequencies
    electric fields

    Keywords

    • switched bias
    • 1/f noise
    • EWI-15630
    • MOSFET LF noise
    • noise reduction
    • p-MOSFET
    • IR-67781

    Cite this

    Kolhatkar, J. S., Salm, C., & Wallinga, H. (2001). 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. In Proceedings of the SAFE Conference (pp. 92-95)
    Kolhatkar, J.S. ; Salm, Cora ; Wallinga, Hans. / 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. Proceedings of the SAFE Conference. 2001. pp. 92-95
    @inproceedings{dedd9d8b88004a06a843261f98f79d97,
    title = "1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness",
    abstract = "MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off��? periodically (switched bias conditions)[1]. In this work, noise measurements on p-MOSFET are reported, with gate oxide thickness varying from 2 to 20 nm, keeping the electric field in the channel constant at 1.4 MV/cm. The switched bias noise and the reduction in the switched bias noise for p-MOSFET, are investigated as a function of the gate oxide thickness and the switching amplitude. Recently reported literature[2] on explanation for switched biased noise reduction is then compared with our measurement results and some explanations are proposed.",
    keywords = "switched bias, 1/f noise, EWI-15630, MOSFET LF noise, noise reduction, p-MOSFET, IR-67781",
    author = "J.S. Kolhatkar and Cora Salm and Hans Wallinga",
    year = "2001",
    language = "English",
    isbn = "90-73461-29-4",
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    Kolhatkar, JS, Salm, C & Wallinga, H 2001, 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. in Proceedings of the SAFE Conference. pp. 92-95, 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, Veldhoven, Netherlands, 28/11/01.

    1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. / Kolhatkar, J.S.; Salm, Cora; Wallinga, Hans.

    Proceedings of the SAFE Conference. 2001. p. 92-95.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness

    AU - Kolhatkar, J.S.

    AU - Salm, Cora

    AU - Wallinga, Hans

    PY - 2001

    Y1 - 2001

    N2 - MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off��? periodically (switched bias conditions)[1]. In this work, noise measurements on p-MOSFET are reported, with gate oxide thickness varying from 2 to 20 nm, keeping the electric field in the channel constant at 1.4 MV/cm. The switched bias noise and the reduction in the switched bias noise for p-MOSFET, are investigated as a function of the gate oxide thickness and the switching amplitude. Recently reported literature[2] on explanation for switched biased noise reduction is then compared with our measurement results and some explanations are proposed.

    AB - MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off��? periodically (switched bias conditions)[1]. In this work, noise measurements on p-MOSFET are reported, with gate oxide thickness varying from 2 to 20 nm, keeping the electric field in the channel constant at 1.4 MV/cm. The switched bias noise and the reduction in the switched bias noise for p-MOSFET, are investigated as a function of the gate oxide thickness and the switching amplitude. Recently reported literature[2] on explanation for switched biased noise reduction is then compared with our measurement results and some explanations are proposed.

    KW - switched bias

    KW - 1/f noise

    KW - EWI-15630

    KW - MOSFET LF noise

    KW - noise reduction

    KW - p-MOSFET

    KW - IR-67781

    M3 - Conference contribution

    SN - 90-73461-29-4

    SP - 92

    EP - 95

    BT - Proceedings of the SAFE Conference

    ER -

    Kolhatkar JS, Salm C, Wallinga H. 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. In Proceedings of the SAFE Conference. 2001. p. 92-95