1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

X.Y. Chen, Cora Salm, F.N. Hooge, P.H. Woerlee

    Research output: Contribution to journalArticleAcademicpeer-review

    14 Citations (Scopus)

    Abstract

    Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.
    Original languageUndefined
    Pages (from-to)1715-1724
    Number of pages10
    JournalSolid-state electronics
    Volume1999
    Issue number43
    DOIs
    Publication statusPublished - 1999

    Keywords

    • METIS-111617
    • IR-74188

    Cite this

    Chen, X.Y. ; Salm, Cora ; Hooge, F.N. ; Woerlee, P.H. / 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations. In: Solid-state electronics. 1999 ; Vol. 1999, No. 43. pp. 1715-1724.
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    title = "1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations",
    abstract = "Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.",
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    doi = "10.1016/S0038-1101(99)00136-7",
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    1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations. / Chen, X.Y.; Salm, Cora; Hooge, F.N.; Woerlee, P.H.

    In: Solid-state electronics, Vol. 1999, No. 43, 1999, p. 1715-1724.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

    AU - Chen, X.Y.

    AU - Salm, Cora

    AU - Hooge, F.N.

    AU - Woerlee, P.H.

    PY - 1999

    Y1 - 1999

    N2 - Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.

    AB - Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.

    KW - METIS-111617

    KW - IR-74188

    U2 - 10.1016/S0038-1101(99)00136-7

    DO - 10.1016/S0038-1101(99)00136-7

    M3 - Article

    VL - 1999

    SP - 1715

    EP - 1724

    JO - Solid-state electronics

    JF - Solid-state electronics

    SN - 0038-1101

    IS - 43

    ER -