1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

X.Y. Chen, Cora Salm, F.N. Hooge, P.H. Woerlee

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)

Abstract

Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.
Original languageUndefined
Pages (from-to)1715-1724
Number of pages10
JournalSolid-state electronics
Volume1999
Issue number43
DOIs
Publication statusPublished - 1999

Keywords

  • METIS-111617
  • IR-74188

Cite this

Chen, X.Y. ; Salm, Cora ; Hooge, F.N. ; Woerlee, P.H. / 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations. In: Solid-state electronics. 1999 ; Vol. 1999, No. 43. pp. 1715-1724.
@article{56b6f4df66134e9eb773247865f0fcb6,
title = "1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations",
abstract = "Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.",
keywords = "METIS-111617, IR-74188",
author = "X.Y. Chen and Cora Salm and F.N. Hooge and P.H. Woerlee",
year = "1999",
doi = "10.1016/S0038-1101(99)00136-7",
language = "Undefined",
volume = "1999",
pages = "1715--1724",
journal = "Solid-state electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "43",

}

1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations. / Chen, X.Y.; Salm, Cora; Hooge, F.N.; Woerlee, P.H.

In: Solid-state electronics, Vol. 1999, No. 43, 1999, p. 1715-1724.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

AU - Chen, X.Y.

AU - Salm, Cora

AU - Hooge, F.N.

AU - Woerlee, P.H.

PY - 1999

Y1 - 1999

N2 - Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.

AB - Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO2. The Si0.7Ge0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized using atomic force microscopy, transmission electron microscopy and Hall effect. Conductance fluctuations were measured at room temperature. Decreasing boundary scattering at higher free carrier density results in increased mobility. However, surprisingly enough, we found that the 1/f noise parameter α decreases with increasing mobility, which does not agree with the parameter α measured in crystalline semiconductor material grown by molecular beam epitaxy. The interpretation is that the noise is mainly generated in the depletion region of the grains, but the Hall mobility is reduced by the scattering at grain-boundaries. In this paper we present a detailed analysis to distinguish between 1/f noise from grain-boundaries, depletion region and neutral region of the grains. The 1/f noise in polycrystalline SiGe can well be analyzed in terms of mobility fluctuations in lattice scattering.

KW - METIS-111617

KW - IR-74188

U2 - 10.1016/S0038-1101(99)00136-7

DO - 10.1016/S0038-1101(99)00136-7

M3 - Article

VL - 1999

SP - 1715

EP - 1724

JO - Solid-state electronics

JF - Solid-state electronics

SN - 0038-1101

IS - 43

ER -