2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate

Dmitry Astakhov; W.J. Goedheer; D. Lopaev; V. Ivanov; V.M. Krivtsun; O. Yakushev; K. Koshelev; Frederik Bijkerk

2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate

Dmitry Astakhov, W.J. Goedheer, D. Lopaev, V. Ivanov, V.M. Krivtsun, O. Yakushev, K. Koshelev, Frederik Bijkerk

XUV Optics

Research output: Contribution to conference › Poster

Abstract

The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.

Original language	English
Pages	-
Publication status	Published - 22 Jan 2013

Keywords

METIS-299653

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Astakhov, D., Goedheer, W. J., Lopaev, D., Ivanov, V., Krivtsun, V. M., Yakushev, O., ... Bijkerk, F. (2013). 2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate. -.

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title = "2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate",

abstract = "The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.",

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author = "Dmitry Astakhov and W.J. Goedheer and D. Lopaev and V. Ivanov and V.M. Krivtsun and O. Yakushev and K. Koshelev and Frederik Bijkerk",

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T1 - 2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate

AU - Astakhov, Dmitry

AU - Goedheer, W.J.

AU - Lopaev, D.

AU - Ivanov, V.

AU - Krivtsun, V.M.

AU - Yakushev, O.

AU - Koshelev, K.

AU - Bijkerk, Frederik

PY - 2013/1/22

Y1 - 2013/1/22

N2 - The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.

AB - The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.

KW - METIS-299653

M3 - Poster

SP - -

ER -