2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate

Dmitry Astakhov, W.J. Goedheer, D. Lopaev, V. Ivanov, V.M. Krivtsun, O. Yakushev, K. Koshelev, Frederik Bijkerk

Research output: Contribution to conferencePosterOther research output

Abstract

The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.
Original languageEnglish
Pages-
Publication statusPublished - 22 Jan 2013

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hydrogen plasma
etching
carbon
ions
hydrogen ions
photoelectrons
low pressure
ionization
photons
hydrogen
pulses
gases
atoms
interactions
energy

Keywords

  • METIS-299653

Cite this

Astakhov, D., Goedheer, W. J., Lopaev, D., Ivanov, V., Krivtsun, V. M., Yakushev, O., ... Bijkerk, F. (2013). 2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate. -.
Astakhov, Dmitry ; Goedheer, W.J. ; Lopaev, D. ; Ivanov, V. ; Krivtsun, V.M. ; Yakushev, O. ; Koshelev, K. ; Bijkerk, Frederik. / 2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate.
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abstract = "The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.",
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Astakhov, D, Goedheer, WJ, Lopaev, D, Ivanov, V, Krivtsun, VM, Yakushev, O, Koshelev, K & Bijkerk, F 2013, '2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate' pp. -.

2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate. / Astakhov, Dmitry; Goedheer, W.J.; Lopaev, D.; Ivanov, V.; Krivtsun, V.M.; Yakushev, O.; Koshelev, K.; Bijkerk, Frederik.

2013. -.

Research output: Contribution to conferencePosterOther research output

TY - CONF

T1 - 2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate

AU - Astakhov, Dmitry

AU - Goedheer, W.J.

AU - Lopaev, D.

AU - Ivanov, V.

AU - Krivtsun, V.M.

AU - Yakushev, O.

AU - Koshelev, K.

AU - Bijkerk, Frederik

PY - 2013/1/22

Y1 - 2013/1/22

N2 - The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.

AB - The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the surface. This results in ion fluxes to the surface, leading to the surface etching. We model the evolution of the plasma during and after the EUV pulse and obtain the energy resolved ion fluxes from the plasma to the surface. The carbon etching rates observed at various experimental conditions and estimated from computed ion fluxes for the same conditions agree under the assumption that the etching yield is close to one carbon atom per incoming hydrogen ion.

KW - METIS-299653

M3 - Poster

SP - -

ER -

Astakhov D, Goedheer WJ, Lopaev D, Ivanov V, Krivtsun VM, Yakushev O et al. 2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate. 2013.