3D-fabrication of tunable and high-density arrays of crystalline silicon nanostructures

J. G.E. Wilbers, J. W. Berenschot, R. M. Tiggelaar, T. Dogan, K. Sugimura, W. G. Van Der Wiel, J. G.E. Gardeniers, N. R. Tas (Corresponding Author)

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

In this report, a procedure for the 3D-nanofabrication of ordered, high-density arrays of crystalline silicon nanostructures is described. Two nanolithography methods were utilized for the fabrication of the nanostructure array, viz. displacement Talbot lithography (DTL) and edge lithography (EL). DTL is employed to perform two (orthogonal) resist-patterning steps to pattern a thin Si3N4 layer. The resulting patterned double layer serves as an etch mask for all further etching steps for the fabrication of ordered arrays of silicon nanostructures. The arrays are made by means of anisotropic wet etching of silicon in combination with an isotropic retraction etch step of the etch mask, i.e. EL. The procedure enables fabrication of nanostructures with dimensions below 15 nm and a potential density of 1010 crystals cm-2.

LanguageEnglish
Article number044003
JournalJournal of micromechanics and microengineering
Volume28
Issue number4
DOIs
Publication statusPublished - 15 Feb 2018

Fingerprint

Silicon
Lithography
Nanostructures
Crystalline materials
Fabrication
Masks
Nanolithography
Anisotropic etching
Wet etching
Nanotechnology
Etching
Crystals

Keywords

  • Anisotropic etching
  • Arrays
  • Displacement Talbot lithography
  • Edge lithography
  • Nanocrystals
  • Silicon
  • Hybride overig

Cite this

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abstract = "In this report, a procedure for the 3D-nanofabrication of ordered, high-density arrays of crystalline silicon nanostructures is described. Two nanolithography methods were utilized for the fabrication of the nanostructure array, viz. displacement Talbot lithography (DTL) and edge lithography (EL). DTL is employed to perform two (orthogonal) resist-patterning steps to pattern a thin Si3N4 layer. The resulting patterned double layer serves as an etch mask for all further etching steps for the fabrication of ordered arrays of silicon nanostructures. The arrays are made by means of anisotropic wet etching of silicon in combination with an isotropic retraction etch step of the etch mask, i.e. EL. The procedure enables fabrication of nanostructures with dimensions below 15 nm and a potential density of 1010 crystals cm-2.",
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3D-fabrication of tunable and high-density arrays of crystalline silicon nanostructures. / Wilbers, J. G.E.; Berenschot, J. W.; Tiggelaar, R. M.; Dogan, T.; Sugimura, K.; Van Der Wiel, W. G.; Gardeniers, J. G.E.; Tas, N. R. (Corresponding Author).

In: Journal of micromechanics and microengineering, Vol. 28, No. 4, 044003, 15.02.2018.

Research output: Contribution to journalArticleAcademicpeer-review

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