3D-fractal engineering based on oxide-only corner lithography

Johan W. Berenschot, Roald M. Tiggelaar, J. Geerlings, Johannes G.E. Gardeniers, Niels Roelof Tas, Magdalena Malankowska, M.P. Pina, R. Mallada

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
4 Downloads (Pure)

Abstract

This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded silicon oxide fractal sheet with approx. a 10 μm footprint has been fabricated. © 2016 IEEE.
Original languageEnglish
Title of host publication2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)
PublisherIEEE
Number of pages4
ISBN (Print)978-1-5090-1457-6
DOIs
Publication statusPublished - 30 May 2016
Event2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016 - Budapest, Hungary
Duration: 30 May 20162 Jun 2016

Publication series

NameCategory numberCFP16DTI-ART; Code 122735

Conference

Conference2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016
Abbreviated titleDTIP
CountryHungary
CityBudapest
Period30/05/162/06/16

Keywords

  • METIS-320590
  • IR-103876

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