This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded silicon oxide fractal sheet with approx. a 10 μm footprint has been fabricated. © 2016 IEEE.
|Name||Category numberCFP16DTI-ART; Code 122735|
|Conference||2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016|
|Period||30/05/16 → 2/06/16|