3D-fractal engineering based on oxide-only corner lithography

Johan W. Berenschot; Roald M. Tiggelaar; J. Geerlings; Johannes G.E. Gardeniers; Niels Roelof Tas; Magdalena Malankowska; M.P. Pina; R. Mallada

doi:10.1109/DTIP.2016.7514895

3D-fractal engineering based on oxide-only corner lithography

Johan W. Berenschot, Roald M. Tiggelaar, J. Geerlings, Johannes G.E. Gardeniers, Niels Roelof Tas, Magdalena Malankowska, M.P. Pina, R. Mallada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

8 Downloads (Pure)

Abstract

This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded silicon oxide fractal sheet with approx. a 10 μm footprint has been fabricated. © 2016 IEEE.

Original language	English
Title of host publication	2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)
Publisher	IEEE
Number of pages	4
ISBN (Print)	978-1-5090-1457-6
DOIs	https://doi.org/10.1109/DTIP.2016.7514895
Publication status	Published - 30 May 2016
Event	2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016 - Budapest, Hungary Duration: 30 May 2016 → 2 Jun 2016

Publication series

Name	Category numberCFP16DTI-ART; Code 122735

Conference

Conference	2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016
Abbreviated title	DTIP
Country/Territory	Hungary
City	Budapest
Period	30/05/16 → 2/06/16

Keywords

METIS-320590
IR-103876

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/DTIP.2016.7514895

Cite this

Berenschot, J. W., Tiggelaar, R. M., Geerlings, J., Gardeniers, J. G. E., Tas, N. R., Malankowska, M., Pina, M. P., & Mallada, R. (2016). 3D-fractal engineering based on oxide-only corner lithography. In 2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP) (Category numberCFP16DTI-ART; Code 122735). IEEE. https://doi.org/10.1109/DTIP.2016.7514895

@inproceedings{320aadfc3eb249f1b8ab124fa29125c4,

title = "3D-fractal engineering based on oxide-only corner lithography",

abstract = "This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded silicon oxide fractal sheet with approx. a 10 μm footprint has been fabricated. {\textcopyright} 2016 IEEE.",

keywords = "METIS-320590, IR-103876",

author = "Berenschot, {Johan W.} and Tiggelaar, {Roald M.} and J. Geerlings and Gardeniers, {Johannes G.E.} and Tas, {Niels Roelof} and Magdalena Malankowska and M.P. Pina and R. Mallada",

year = "2016",

month = may,

day = "30",

doi = "10.1109/DTIP.2016.7514895",

language = "English",

isbn = "978-1-5090-1457-6",

series = "Category numberCFP16DTI-ART; Code 122735",

publisher = "IEEE",

booktitle = "2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)",

address = "United States",

note = "2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016, DTIP ; Conference date: 30-05-2016 Through 02-06-2016",

}

Berenschot, JW , Tiggelaar, RM, Geerlings, J, Gardeniers, JGE , Tas, NR, Malankowska, M, Pina, MP & Mallada, R 2016, 3D-fractal engineering based on oxide-only corner lithography. in 2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP). Category numberCFP16DTI-ART; Code 122735, IEEE, 2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016, Budapest, Hungary, 30/05/16. https://doi.org/10.1109/DTIP.2016.7514895

3D-fractal engineering based on oxide-only corner lithography. / Berenschot, Johan W.; Tiggelaar, Roald M.; Geerlings, J. et al.
2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP). IEEE, 2016. (Category numberCFP16DTI-ART; Code 122735).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - 3D-fractal engineering based on oxide-only corner lithography

AU - Berenschot, Johan W.

AU - Tiggelaar, Roald M.

AU - Geerlings, J.

AU - Gardeniers, Johannes G.E.

AU - Tas, Niels Roelof

AU - Malankowska, Magdalena

AU - Pina, M.P.

AU - Mallada, R.

PY - 2016/5/30

Y1 - 2016/5/30

N2 - This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded silicon oxide fractal sheet with approx. a 10 μm footprint has been fabricated. © 2016 IEEE.

AB - This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded silicon oxide fractal sheet with approx. a 10 μm footprint has been fabricated. © 2016 IEEE.

KW - METIS-320590

KW - IR-103876

U2 - 10.1109/DTIP.2016.7514895

DO - 10.1109/DTIP.2016.7514895

M3 - Conference contribution

SN - 978-1-5090-1457-6

T3 - Category numberCFP16DTI-ART; Code 122735

BT - 2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP)

PB - IEEE

T2 - 2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2016

Y2 - 30 May 2016 through 2 June 2016

ER -

3D-fractal engineering based on oxide-only corner lithography

Abstract

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Conference

Keywords

UN SDGs

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