3D Nanofabrication of components by repeated corner lithography: Self Aligned sub-50nm apertures

N. Burouni; Johan W. Berenschot; Michael Curt Elwenspoek; Niels Roelof Tas

doi:10.1109/NANO.2012.6322189

3D Nanofabrication of components by repeated corner lithography: Self Aligned sub-50nm apertures

N. Burouni
, Johan W. Berenschot
, Michael Curt Elwenspoek
, Niels Roelof Tas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

193 Downloads (Pure)

Abstract

Repeated corner lithography is an innovative method in wafer scale to obtain three dimensional nano structures, which are uniform and compatible with geometrical expectation. In this paper we present novel sub-50nm apertures fabricated by repeated corner lithography. An important result from the presented work is that it is possible to control the aperture size and feature by initial layer thickness of nitride and proper choice of LOCOS temperature and oxidation time.

Original language	Undefined
Title of host publication	Proceedings of the 12th IEEE International Conference on Nanotechnology (IEEE- NANO)
Place of Publication	Hoes Lane, USA
Publisher	IEEE
Pages	-
Number of pages	5
ISBN (Print)	978-1-4673-2198-3
DOIs	https://doi.org/10.1109/NANO.2012.6322189
Publication status	Published - 20 Aug 2012
Event	12th IEEE International Conference on Nanotechnology, IEEE- NANO 2012 - Birmingham, UK Duration: 20 Aug 2012 → 23 Aug 2012

Publication series

Name
Publisher	IEEE
ISSN (Print)	1944-9399

Conference

Conference	12th IEEE International Conference on Nanotechnology, IEEE- NANO 2012
Period	20/08/12 → 23/08/12
Other	20-23 August 2012

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

EWI-23295
LOCOS temperature
oxidation time
innovative method
three dimensional nano structures
IR-85694
size 50 nm
repeated corner lithography
3D nanofabrication
METIS-296409
geometrical expectation

Access to Document

10.1109/NANO.2012.6322189

06322189

Cite this

@inproceedings{41cf2af5a1274b5780f759452ac89543,

title = "3D Nanofabrication of components by repeated corner lithography: Self Aligned sub-50nm apertures",

abstract = "Repeated corner lithography is an innovative method in wafer scale to obtain three dimensional nano structures, which are uniform and compatible with geometrical expectation. In this paper we present novel sub-50nm apertures fabricated by repeated corner lithography. An important result from the presented work is that it is possible to control the aperture size and feature by initial layer thickness of nitride and proper choice of LOCOS temperature and oxidation time.",

keywords = "EWI-23295, LOCOS temperature, oxidation time, innovative method, three dimensional nano structures, IR-85694, size 50 nm, repeated corner lithography, 3D nanofabrication, METIS-296409, geometrical expectation",

author = "N. Burouni and Berenschot, \{Johan W.\} and Elwenspoek, \{Michael Curt\} and Tas, \{Niels Roelof\}",

note = "10.1109/NANO.2012.6322189 ; 12th IEEE International Conference on Nanotechnology, IEEE- NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",

year = "2012",

month = aug,

day = "20",

doi = "10.1109/NANO.2012.6322189",

language = "Undefined",

isbn = "978-1-4673-2198-3",

publisher = "IEEE",

pages = "--",

booktitle = "Proceedings of the 12th IEEE International Conference on Nanotechnology (IEEE- NANO)",

address = "United States",

}

Burouni, N, Berenschot, JW, Elwenspoek, MC & Tas, NR 2012, 3D Nanofabrication of components by repeated corner lithography: Self Aligned sub-50nm apertures. in Proceedings of the 12th IEEE International Conference on Nanotechnology (IEEE- NANO). IEEE, Hoes Lane, USA, pp. -, 12th IEEE International Conference on Nanotechnology, IEEE- NANO 2012, 20/08/12. https://doi.org/10.1109/NANO.2012.6322189

3D Nanofabrication of components by repeated corner lithography: Self Aligned sub-50nm apertures. / Burouni, N.; Berenschot, Johan W.; Elwenspoek, Michael Curt et al.
Proceedings of the 12th IEEE International Conference on Nanotechnology (IEEE- NANO). Hoes Lane, USA: IEEE, 2012. p. -.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - 3D Nanofabrication of components by repeated corner lithography: Self Aligned sub-50nm apertures

AU - Burouni, N.

AU - Berenschot, Johan W.

AU - Elwenspoek, Michael Curt

AU - Tas, Niels Roelof

N1 - 10.1109/NANO.2012.6322189

PY - 2012/8/20

Y1 - 2012/8/20

N2 - Repeated corner lithography is an innovative method in wafer scale to obtain three dimensional nano structures, which are uniform and compatible with geometrical expectation. In this paper we present novel sub-50nm apertures fabricated by repeated corner lithography. An important result from the presented work is that it is possible to control the aperture size and feature by initial layer thickness of nitride and proper choice of LOCOS temperature and oxidation time.

AB - Repeated corner lithography is an innovative method in wafer scale to obtain three dimensional nano structures, which are uniform and compatible with geometrical expectation. In this paper we present novel sub-50nm apertures fabricated by repeated corner lithography. An important result from the presented work is that it is possible to control the aperture size and feature by initial layer thickness of nitride and proper choice of LOCOS temperature and oxidation time.

KW - EWI-23295

KW - LOCOS temperature

KW - oxidation time

KW - innovative method

KW - three dimensional nano structures

KW - IR-85694

KW - size 50 nm

KW - repeated corner lithography

KW - 3D nanofabrication

KW - METIS-296409

KW - geometrical expectation

U2 - 10.1109/NANO.2012.6322189

DO - 10.1109/NANO.2012.6322189

M3 - Conference contribution

SN - 978-1-4673-2198-3

SP - -

BT - Proceedings of the 12th IEEE International Conference on Nanotechnology (IEEE- NANO)

PB - IEEE

CY - Hoes Lane, USA

T2 - 12th IEEE International Conference on Nanotechnology, IEEE- NANO 2012

Y2 - 20 August 2012 through 23 August 2012

ER -