3Gb/s monolithically integrated photodiode and pre-amplifier in standard 0.18µm CMOS

S. Radovanovic, Anne J. Annema, Bram Nauta

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    Abstract

    A 3 Gb/s optical detector with integrated photodiode and pre-amplifier for 850 nm light is presented. The IC is implemented in standard 0.18 /spl mu/m CMOS. The data rate is achieved by using an inherently robust analog equalizer without sacrificing responsivity.
    Original languageEnglish
    Title of host publication2004 IEEE International Solid-State Circuits Conference ISSCC 2004
    Place of PublicationSan-Francisco
    PublisherIEEE
    Pages-
    ISBN (Print)0-7803-8267-6
    DOIs
    Publication statusPublished - 15 Feb 2004
    EventIEEE International Solid-State Circuits Conference, ISSCC 2004 - San Francisco, United States
    Duration: 15 Feb 200419 Feb 2004

    Conference

    ConferenceIEEE International Solid-State Circuits Conference, ISSCC 2004
    Abbreviated titleISSCC 2004
    CountryUnited States
    CitySan Francisco
    Period15/02/0419/02/04

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    Keywords

    • METIS-218878
    • IR-47889

    Cite this

    Radovanovic, S., Annema, A. J., & Nauta, B. (2004). 3Gb/s monolithically integrated photodiode and pre-amplifier in standard 0.18µm CMOS. In 2004 IEEE International Solid-State Circuits Conference ISSCC 2004 (pp. -). San-Francisco: IEEE. https://doi.org/10.1109/ISSCC.2004.1332799