40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier

J. Bradley, M. Gay, J.C. Simon, Kerstin Worhoff, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
48 Downloads (Pure)

Abstract

Erbium-doped waveguide amplifiers (EDWAs) are of interest for their potential use in integrated photonic circuits. Unlike semiconductor optical amplifiers (SOAs), which are typically fabricated using costly III-V materials and are limited in their capacity to amplify WDM signals (< 20 Gbit/s per channel) due to transient carrier effects, EDWA fabrication and design is straightforward, they can be processed directly on silicon, and their all-optical operation and long excited-state lifetime mean that amplification at high data rates is feasible. This paper presents results of amplification of a 40-Gbit/s optical signal using an EDWA. Typical eye diagrams with and without the EDWA and lensed fibers are presented. In both cases the eye pattern is open and no significant distortion can be observed with the EDWA included in the transmission setup. No difference in internal net gain was observed for the 40-Gbit/s encoded signal and a continuous-wave signal. Compared to the reference signal, without EDWA and lensed fibers, for a pump power of 220 mW and a signal power of -0.5 dBm coupled into the device, only a small power penalty of approximately 1 dB is observed.
Original languageUndefined
Title of host publicationLasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Place of PublicationPiscataway
PublisherIEEE
PagesCI4.3 TUE
Number of pages1
ISBN (Print)978-1-4244-4079-5
DOIs
Publication statusPublished - 7 Aug 2009
Event11th European Quantum Electronics Conference, EQEC 2009 - Munich, Germany
Duration: 14 Jun 200919 Jun 2009
Conference number: 11
http://2009.cleoeurope.org/

Publication series

Name
PublisherIEEE

Conference

Conference11th European Quantum Electronics Conference, EQEC 2009
Abbreviated titleEQEC 2009
CountryGermany
CityMunich
Period14/06/0919/06/09
Internet address

Keywords

  • METIS-265809
  • IOMS-APD: Active Photonic Devices
  • EWI-17478
  • IR-69967

Cite this

Bradley, J., Gay, M., Simon, J. C., Worhoff, K., & Pollnau, M. (2009). 40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier. In Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on (pp. CI4.3 TUE). [10.1109/CLEOE-EQEC.2009.5194739] Piscataway: IEEE. https://doi.org/10.1109/CLEOE-EQEC.2009.5194739, https://doi.org/10.1109/CLEOE-EQEC.2009.5194739 - CI4.3 TUE
Bradley, J. ; Gay, M. ; Simon, J.C. ; Worhoff, Kerstin ; Pollnau, Markus. / 40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier. Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. Piscataway : IEEE, 2009. pp. CI4.3 TUE
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title = "40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier",
abstract = "Erbium-doped waveguide amplifiers (EDWAs) are of interest for their potential use in integrated photonic circuits. Unlike semiconductor optical amplifiers (SOAs), which are typically fabricated using costly III-V materials and are limited in their capacity to amplify WDM signals (< 20 Gbit/s per channel) due to transient carrier effects, EDWA fabrication and design is straightforward, they can be processed directly on silicon, and their all-optical operation and long excited-state lifetime mean that amplification at high data rates is feasible. This paper presents results of amplification of a 40-Gbit/s optical signal using an EDWA. Typical eye diagrams with and without the EDWA and lensed fibers are presented. In both cases the eye pattern is open and no significant distortion can be observed with the EDWA included in the transmission setup. No difference in internal net gain was observed for the 40-Gbit/s encoded signal and a continuous-wave signal. Compared to the reference signal, without EDWA and lensed fibers, for a pump power of 220 mW and a signal power of -0.5 dBm coupled into the device, only a small power penalty of approximately 1 dB is observed.",
keywords = "METIS-265809, IOMS-APD: Active Photonic Devices, EWI-17478, IR-69967",
author = "J. Bradley and M. Gay and J.C. Simon and Kerstin Worhoff and Markus Pollnau",
note = "10.1109/CLEOE-EQEC.2009.5194739 - CI4.3 TUE",
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Bradley, J, Gay, M, Simon, JC, Worhoff, K & Pollnau, M 2009, 40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier. in Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on., 10.1109/CLEOE-EQEC.2009.5194739, IEEE, Piscataway, pp. CI4.3 TUE, 11th European Quantum Electronics Conference, EQEC 2009, Munich, Germany, 14/06/09. https://doi.org/10.1109/CLEOE-EQEC.2009.5194739, https://doi.org/10.1109/CLEOE-EQEC.2009.5194739 - CI4.3 TUE

40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier. / Bradley, J.; Gay, M.; Simon, J.C.; Worhoff, Kerstin; Pollnau, Markus.

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. Piscataway : IEEE, 2009. p. CI4.3 TUE 10.1109/CLEOE-EQEC.2009.5194739.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AU - Simon, J.C.

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AU - Pollnau, Markus

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N2 - Erbium-doped waveguide amplifiers (EDWAs) are of interest for their potential use in integrated photonic circuits. Unlike semiconductor optical amplifiers (SOAs), which are typically fabricated using costly III-V materials and are limited in their capacity to amplify WDM signals (< 20 Gbit/s per channel) due to transient carrier effects, EDWA fabrication and design is straightforward, they can be processed directly on silicon, and their all-optical operation and long excited-state lifetime mean that amplification at high data rates is feasible. This paper presents results of amplification of a 40-Gbit/s optical signal using an EDWA. Typical eye diagrams with and without the EDWA and lensed fibers are presented. In both cases the eye pattern is open and no significant distortion can be observed with the EDWA included in the transmission setup. No difference in internal net gain was observed for the 40-Gbit/s encoded signal and a continuous-wave signal. Compared to the reference signal, without EDWA and lensed fibers, for a pump power of 220 mW and a signal power of -0.5 dBm coupled into the device, only a small power penalty of approximately 1 dB is observed.

AB - Erbium-doped waveguide amplifiers (EDWAs) are of interest for their potential use in integrated photonic circuits. Unlike semiconductor optical amplifiers (SOAs), which are typically fabricated using costly III-V materials and are limited in their capacity to amplify WDM signals (< 20 Gbit/s per channel) due to transient carrier effects, EDWA fabrication and design is straightforward, they can be processed directly on silicon, and their all-optical operation and long excited-state lifetime mean that amplification at high data rates is feasible. This paper presents results of amplification of a 40-Gbit/s optical signal using an EDWA. Typical eye diagrams with and without the EDWA and lensed fibers are presented. In both cases the eye pattern is open and no significant distortion can be observed with the EDWA included in the transmission setup. No difference in internal net gain was observed for the 40-Gbit/s encoded signal and a continuous-wave signal. Compared to the reference signal, without EDWA and lensed fibers, for a pump power of 220 mW and a signal power of -0.5 dBm coupled into the device, only a small power penalty of approximately 1 dB is observed.

KW - METIS-265809

KW - IOMS-APD: Active Photonic Devices

KW - EWI-17478

KW - IR-69967

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DO - 10.1109/CLEOE-EQEC.2009.5194739

M3 - Conference contribution

SN - 978-1-4244-4079-5

SP - CI4.3 TUE

BT - Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

PB - IEEE

CY - Piscataway

ER -

Bradley J, Gay M, Simon JC, Worhoff K, Pollnau M. 40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier. In Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. Piscataway: IEEE. 2009. p. CI4.3 TUE. 10.1109/CLEOE-EQEC.2009.5194739 https://doi.org/10.1109/CLEOE-EQEC.2009.5194739, https://doi.org/10.1109/CLEOE-EQEC.2009.5194739 - CI4.3 TUE