50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes

G. Gentile*, K. Buisman, A. Akhoukh, L. C.N. De Vreede, B. Rejaei, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.

Original languageEnglish
Title of host publication2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publicationDigest of Papers
Pages199-202
Number of pages4
DOIs
Publication statusPublished - 24 Sep 2008
Externally publishedYes
EventIEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2008 - Orlando, FL, United States
Duration: 23 Jan 200825 Jan 2008
https://www.radiowirelessweek.org/index.php/sirf-home

Conference

ConferenceIEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2008
Abbreviated titleSiRF2008
CountryUnited States
CityOrlando, FL
Period23/01/0825/01/08
Internet address

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Keywords

  • Distributed circuit
  • Phase shifter
  • Silicon on glass process
  • Varactor diode

Cite this

Gentile, G., Buisman, K., Akhoukh, A., De Vreede, L. C. N., Rejaei, B., & Nanver, L. K. (2008). 50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes. In 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers (pp. 199-202). [4446290] https://doi.org/10.1109/SMIC.2008.56