50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes

G. Gentile; K. Buisman; A. Akhoukh; L. C.N. De Vreede; B. Rejaei; L. K. Nanver

doi:10.1109/SMIC.2008.56

50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes

G. Gentile^*, K. Buisman, A. Akhoukh, L. C.N. De Vreede, B. Rejaei, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.

Original language	English
Title of host publication	2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publication	Digest of Papers
Pages	199-202
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2008.56
Publication status	Published - 24 Sept 2008
Externally published	Yes
Event	IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2008 - Orlando, FL, United States Duration: 23 Jan 2008 → 25 Jan 2008 https://www.radiowirelessweek.org/index.php/sirf-home

Conference

Conference	IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2008
Abbreviated title	SiRF2008
Country/Territory	United States
City	Orlando, FL
Period	23/01/08 → 25/01/08
Internet address	https://www.radiowirelessweek.org/index.php/sirf-home

Keywords

Distributed circuit
Phase shifter
Silicon on glass process
Varactor diode

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10.1109/SMIC.2008.56

Cite this

@inproceedings{e5c289e8144140b498af54ba07201a95,

title = "50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes",

abstract = "We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.",

keywords = "Distributed circuit, Phase shifter, Silicon on glass process, Varactor diode",

author = "G. Gentile and K. Buisman and A. Akhoukh and {De Vreede}, {L. C.N.} and B. Rejaei and Nanver, {L. K.}",

year = "2008",

month = sep,

day = "24",

doi = "10.1109/SMIC.2008.56",

language = "English",

isbn = "9781424418558",

pages = "199--202",

booktitle = "2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",

note = "IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2008, SiRF2008 ; Conference date: 23-01-2008 Through 25-01-2008",

url = "https://www.radiowirelessweek.org/index.php/sirf-home",

}

Gentile, G, Buisman, K, Akhoukh, A, De Vreede, LCN, Rejaei, B & Nanver, LK 2008, 50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes. in 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers., 4446290, pp. 199-202, IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2008, Orlando, FL, United States, 23/01/08. https://doi.org/10.1109/SMIC.2008.56

50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes. / Gentile, G.; Buisman, K.; Akhoukh, A. et al.
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers. 2008. p. 199-202 4446290.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - 50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes

AU - Gentile, G.

AU - Buisman, K.

AU - Akhoukh, A.

AU - De Vreede, L. C.N.

AU - Rejaei, B.

AU - Nanver, L. K.

PY - 2008/9/24

Y1 - 2008/9/24

N2 - We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.

AB - We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.

KW - Distributed circuit

KW - Phase shifter

KW - Silicon on glass process

KW - Varactor diode

UR - http://www.scopus.com/inward/record.url?scp=52049113700&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2008.56

DO - 10.1109/SMIC.2008.56

M3 - Conference contribution

AN - SCOPUS:52049113700

SN - 9781424418558

SP - 199

EP - 202

BT - 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

T2 - IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2008

Y2 - 23 January 2008 through 25 January 2008

ER -

50 GHz integrated distributed phase shifter based on novel silicon-on-glass varactor diodes

Abstract

Conference

Keywords

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